Investigation on ion movement in the fringe-field switching mode depending on resistivity of alignment layer and dielectric anisotropic sign of liquid crystal

Adsorption and desorption of ions at interface between liquid crystal and alignment layer in liquid crystal displays play a crucial role in residual direct current voltage associated with image sticking. In this article, the dependency of such adsorption and desorption of ions on resistivity of alignment layer and sign of liquid crystal dielectric anisotropy in the fringe-field liquid crystal cell has been investigated. Our studies show that the time constant of ions during adsorption and desorption depends upon resistivity and dielectric constant of liquid crystal and alignment layer, and most strongly influenced by the resistivity of alignment layer such that the one with lower resistivity in two orders shows much faster adsorption and desorption at the interface than that of the one with higher resistivity.     

Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

A VO₂ thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO₂ (FTO) conductive glass substrate. The FTO/VO₂/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO₂/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO₂/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.     

高压直流断路器测控装置的设计与试验分析

直流输(配)电是目前电网发展的趋势,而高压直流断路器的研发是影响其发展的关键技术之一。测量与控制装置的研究是高压直流断路器的研发要点。采用高压电力电子器件,DSP+FPGA相结合的控制方式,对其测控装置进行研究分析,提出了区间阈值的控制方法及相应的控制时序,从高压直流输电、能源多样化的发展需求入手,将机械开关和固态开光相结合,设计了一套混合式高压直流断路器样机。通过对样机进行合分闸试验及故障分闸试验,证明了所研制的高压直流断路器样机具有分闸动作快,限弧能力强,动作一致性好等优点。     

Optical,electrical and magnetic properties of nanostructured Mn3O4 synthesized through a facile chemical route

Nanostructured Mn₃O₄ sample with an average crystallite size of ∼15 nm is synthesized via the reduction of potassium permanganate using hydrazine. The average particle size obtained from the Transmission Electron Microscopy analysis is in good agreement with the average crystallite size estimated from X-ray diffraction analysis. The presence of Mn⁴⁺ ions at the octahedral sites is inferred from the results of Raman, UV–visible absorption and X-ray photoelectron spectroscopy analyzes. DC electrical conductivity of the sample in the temperature range 313–423 K, is about five orders of magnitude larger than that reported for single crystalline Mn₃O₄ sample. The dominant conduction mechanism is identified to be of the polaronic hopping of holes between cations in the octahedral sites. The zero field cooled and field cooled magnetization of the sample is studied in the range 20–300 K. The Curie temperature for the sample is about 45 K, below which the sample is ferrimagnetic. A blocking temperature of 35 K is observed in the field cooled curve. It is observed that the sample shows hysteresis at temperatures below the Curie temperature with no saturation, even at an applied field (20 kOe). The presence of an ordered core and disordered surface of spin arrangements is observed from the magnetization studies. Above the Curie temperature, the sample shows linear dependence of magnetization on applied field with no hysteresis characteristic of paramagnetic phase.     

Modulating microstructure and optical properties of hydrogenated nanocrystalline silicon photovoltaic materials prepared under hydrogen diluted silane PECVD by various DC bias

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by plasma enhanced chemical vapor deposition under the various negative substrate bias voltages with hydrogen as a diluent of silane. The microstructure and optical properties of nc-Si:H thin films were studied by Raman scattering spectroscopy, X-ray diffraction (XRD), transmission electron microscopy, and optical transmission spectroscopy. Raman spectra and XRD pattern reveal that applying negative bias voltages at the moderate level favors the enhancement of crystalline volume fraction, increase of crystallite sizes and decrease of residual stress. We also demonstrated that the negative direct current bias can be used to modulate the volume fraction of voids, refractive index, absorption coefficient, compactness and ordered degree of nc-Si:H films. It is found that the film deposited at −80 V shows not only high crystallinity, size of crystallite, and static index n₀ but also low residual stress and volume fraction of voids. Furthermore, the microstructural evolution mechanism of nc-Si:H thin films prepared at different bias voltages is tentatively explored.     

Maximum power point tracker based on maximum power point resistance modeling

This paper presents a new, simple, accurate, and inexpensive practical methodology and experimental solution for the modeling of conventional (domestic and commercial facilities) photovoltaic generators (PVG), so that they can work at their maximum power point (MPP). The PVG may be a panel, an array of panels, or a photovoltaic field. As a starting restriction (actual) it has to be assumed that it is not possible to isolate the PVG variables dependence (mainly current, voltage, and hence power) with solar radiation and temperature, because they are highly correlated. This methodology proposes the modeling facility on its MPP by its MPP resistance (R_MPP = V_MPP/I_MPP), being V_MPP and I_MPP the voltage and current of the PVG, respectively, at its MPP. The analysis shows, by simulation first and then experimentally, that R_MPP does not present significant temperature dependencies, at least in the usual range. This important result allows us to model the PVG only in terms of solar radiation. From a set of experimental data, different models to estimate R_MPP are proposed. The obtained results are very accurate. These models allow an immediate practical application that it is also developed in the paper: MPP tracker (MPPT) design by the calculation of the DC/DC converter duty cycle which places the PVG at its MPP directly and continuously. This new methodology and experimental system has been registered in the Spanish Patent and Trademark Office with the number P201530352. Copyright © 2015 John Wiley & Sons, Ltd.     

Anti-glycating and anti-oxidant compounds from traditionally used anti-diabetic plant Geigeria alata(DC) Oliv. & Hiern.

Abstract

A new sesquiterpene lactone geigerianoloide (1) and four known flavonoids axillarin (2), quercetin (3), 3-methoxy-5,7,3',4'-tetrahydroxy-flavone (4) and hispidulin (5) were isolated from Geigeria alata (DC) Oliv. & Hiern. (Asteraceae). Structures were deduced using ¹H- and ¹³C- NMR spectroscopy, mass spectrometry, while the structure of compound 1 was also deduced using X-ray crystallography technique.

Geigeria alata is traditionally used for diabetes, therefore compounds were tested for anti-glycation activity, in which compounds 2 and 3 showed potent activities (IC₅₀ values of 246.97?±?0.83 and 262.37?±?0.22 µM, respectively) compared to IC₅₀ value 294.50?±?1.5 µM of rutin. Moreover, compound 4 exhibited a comparable activity to rutin (IC₅₀?=?293.28?±?1.34 µM). Compound 5 showed a weak activity.

Compounds 2, 3, and 4 exhibited potent DPPH radical scavenging activity (IC₅₀?=?0.1?±?0.00, 0.13?±?0.00 and 0.15?±?0.01 µM, respectively). Compounds 2, 3, and 4 demonstrated significant superoxide anion scavenging activity with IC₅₀ values of 0.14?±?0.001, 0.17?±?0.00, and 0.11?±?0.006 µM, respectively.     

基于LM628的光谱分析仪波长定位系统

本文介绍了基于LH628的光谱分析仪波长定位系统,详细阐述了其原理及具体实现。     

动态法测量材料的磁电效应

根据动态法测量磁电效应的基本原理,优化设计并建立了磁电效应测量系统,对其中的一些重要参数对磁电效应测量的影响进行了研究.结果表明,综合考虑测量需要,选择适当的测量参数,对于磁电效应的正确测量十分重要.适当增加线圈长度、减小线圈匝数以及减小交变磁场场强,都是提高磁电效应测量精度、减小测量误差的有效途径.     

磁控溅射工艺对VOx薄膜结构和性能的影响

以高纯氧和高纯氩为气源,通过改变薄膜的制备工艺,用直流磁控溅射法在玻璃和单晶硅片上制备了VOx 薄膜,并对其进行了退火处理。借助LCR测试仪和X射线衍射仪,对VOx薄膜的电阻温度系数、晶体结构进行了检测。结果表明,当溅射 气压为1.5Pa,功率为100W,时间为1h,氧氩比为0.8∶25时, 经450℃退火后,玻璃基片上制备的薄膜的电阻温度系数(TCR)超过-0.02/℃,其结构和性能最好。同时对比了玻璃和单晶硅基片对VOx 薄膜的生长、性能和结构的影响。当氧氩比为0.8∶25时,单晶硅片上制得的VOx薄膜的质量和性能最好。