Characterization of the surface and the interphase of PVC-copper amine-treated wood composites

Contact angles and surface energy of wood, as well as interfacial shear strength between wood and polyvinyl chloride (PVC) were investigated and used to monitor the modifications generated on the surfaces of wood treated with a copper ethanolamine solution. An increase in surface energy of wood after treatments promotes wetting of PVC on wood surfaces. Improved interfacial shear strength between treated wood and PVC matrix can be attributed to the formation of a stronger wood-PVC interphase. This suggests that treatment may be used to improve the adhesion between wood surface and PVC in the formulation of wood fiber composites to yield products with enhanced mechanical properties and better biological and physical performance against decay and insect destroying wood.     

铜引线键合中影响焊球硬度因素的研究

铜丝球焊由于其经济优势和优越的电气性能近来得到了普及,然而,在引线键合工艺中用铜丝取代金丝面临着一些技术上的挑战。多年来,IC芯片焊盘结构已经逐步适应了金丝球焊。铜在本质上比金硬度高,因此以铜线取代金线便引出了有关硬度的问题。研究了用25．4μm铜丝球焊中与键合机参数有关的铜焊球硬度特性。采用电子打火系统不同的电流和打火时间设置,用5％氢气和95％氮气组成的惰性保护气体形成了一个典型的25．4μm大小的铜焊球,研究了维氏硬度的焊球。用实验设计建立了第一和第二键合参数,进行了无空气焊球基本数据调整。通过改变电子打火系统参数。对硬度特性进行了进一步的测试。典型的键合球的大小和厚度的第一键合响应证实铜键合球的生产实力与电子打火系统的电流和打火时间有关．     

Evaluation of Cu-bumps with lead-free solders for flip-chip package applications

Low cost electroplated Cu-bump with environmental friendly Sn solder was developed for flip-chip applications. The seed layer used was Ti/WN_x/Ti/Cu where WN_x was used as the Cu diffusion barrier and Ti was used to enhance the adhesion between bump and the chip pad. Thick negative photoresist (THB JSR-151N) with a high aspect ratio of 2.4 was used for electroplating of copper bump and Sn solder. The Sn solder cap was reflowed at 225° for 6 min at N₂ atmosphere. No wetting phenomenon was observed for the Sn solder as evaluated by energy-dispersed spectroscopy (EDS). The Cu-bump with Ti/WN_x/Ti/Cu seed layer not only have higher shear force than the Cu-bump with Ti/Cu seed layer but also has higher resistance to fatigue failure than the Au, SnCu, SnAg bumps.     

Two proofs of the Bermond-Thomassen conjecture for tournaments with bounded minimum in-degree

The Bermond-Thomassen conjecture states that, for any positive integer r, a digraph of minimum out-degree at least 2r−1 contains at least r vertex-disjoint directed cycles. Thomassen proved that it is true when r=2, and very recently the conjecture was proved for the case where r=3. It is still open for larger values of r, even when restricted to (regular) tournaments. In this paper, we present two proofs of this conjecture for tournaments with minimum in-degree at least 2r−1. In particular, this shows that the conjecture is true for (almost) regular tournaments. In the first proof, we prove auxiliary results about union of sets contained in another union of sets, that might be of independent interest. The second one uses a more graph-theoretical approach, by studying the properties of a maximum set of vertex-disjoint directed triangles.     

Balanced Truncation Model Reduction of Large-Scale Dense Systems on Parallel Computers

Model reduction is an area of fundamental importance in many modeling and control applications. In this paper we analyze the use of parallel computing in model reduction methods based on balanced truncation of large-scale dense systems. The methods require the computation of the Gramians of a linear-time invariant system. Using a sign function-based solver for computing full-rank factors of the Gramians yields some favorable computational aspects in the subsequent computation of the reduced-order model, particularly for non-minimal systems. As sign function-based computations only require efficient implementations of basic linear algebra operations readily available, e.g., in the BLAS, LAPACK, and ScaLAPACK, good performance of the resulting algorithms on parallel computers is to be expected. Our experimental results on a PC cluster show the performance and scalability of the parallel implementation.     

A Note on Irwin's Conjecture (E.F.I. p-Groups = Thick p-Groups)

We show that in the article of Cutler and Missel (1984 Cutler , D. , Missel , C. ( 1984 ). The structure of C-decomposable p ^ω+n -projective abelian p-groups . Comm. Alg. 12 : 301 – 319 .[Taylor &; Francis Online], [Web of Science ®] , [Google Scholar]) there is, in fact, an example of an essentially finitely indecomposable (e.f.i.) abelian p-group which is not thick, and which can be chosen even to be separable, thus answering once again in the negative Irwin's conjecture that the e.f.i. p-groups are precisely the thick ones and that was already resolved in Dugas and Irwin (1992 Dugas , M. , Irwin , J. ( 1992 ). On thickness and decomposability of abelian p-groups . Isr. J. Math. 79 : 153 – 159 . [Google Scholar]).     

Screening self-assembled monolayers as Cu diffusion barriers

Self-assembled monolayers (SAMs) are investigated as potential Cu diffusion barriers for application in back-end-of-line (BEOL) interconnections. A screening of SAMs derived from molecules with different head group (SiCl₃, Si(OCH₃)₃, Si(OCH₃)Cl₂) bonding to the dielectric substrate, chain lengths (n = 3-21) and terminal group (CH₃, Br, CN, NH₂, C₅H₄N and SH) bonding to the Cu overlayer are compared in terms of inhibition of interfacial Cu diffusion and promotion of Cu-SiO₂ adhesion. SAM barrier properties against Cu silicide formation are examined upon annealing from 200 to 400 °C by visual inspection, sheet resistance measurements (Rs) and X-ray Diffraction Spectroscopy (XRD). Cu/SAM/SiO₂ adhesion is evaluated by tape test and four-point probe measurements. Results indicate that NH₂-SAM derived from 3-aminopropyltrimethoxysilane is the most promising for Cu diffusion barrier application. Silicide formation is inhibited to at least 400 °C, essential stability for BEOL integration. However, the 2.9 Gc (J/m²) adhesion of the layer compared with 3.1 Gc (J/m²) on SiO₂ does need improvement.     

Impact of Al in Cu alloy interconnects on electro and stress migration reliabilities

The reliability of Cu interconnects was successfully improved by applying a CuAl alloy seed. However, the effect of additive Al on the reliability is not fully understood. In order to reveal the reliability improvement mechanism, Cu films using CuAl alloy seed were investigated in detail. As stress induced voiding (SIV) as well as electromigration is caused by migration of vacancies and/or Cu atoms, the measured activation energy value of electromigration using CuAl indicates that the fast diffusion paths are Cu grain boundaries. The analysis using high lateral resolution scanning type secondary ion mass spectrometry (nano-SIMS) clarifies that additive Al in ECP-Cu film is mainly localized at grain boundaries. Furthermore, positron annihilation was used to probe vacancy-type defects in Cu films. The CuAl films before recrystallization contain larger and higher density vacancy-type defects. Whereas, the recrystallized CuAl films after annealing above 250 °C contain smaller and lower density defects. Furthermore, CuAl films with annealing above 350 °C contain less Al inside the grains. These results represent that Al atoms in Cu films with annealing above 350 °C are exhausted from inside grains to the grain boundaries, and the spewed Al atoms existing at Cu grain boundary effectively prevents the diffusion of Cu and/or vacancies.     

Synthesis and Structure of a Copper Complex of a Macrocyclic Ligand with Dissimilar HN+N(Amino)O2 and N2(Imino)O2 Inners

Abstract The copper complex [Cu(C₂₃H₂₇Br₂N₄O₂)(H₂O)(NO₃)]₂ was synthesized and characterized by X-ray diffraction. The complex crystallizes in the triclinic system with space group P-1, lattice parameters: a = 13.2293(18) (?), b = 14.184(20) (?), c = 16.522(23) (?), α = 91.923(2)°, β = 111.777(2)°, γ = 111.259(2)°, V = 2632.0(6) ?³, Z = 4, D _c = 0.88 Mg m⁻³. In the title compound [Cu(C₂₃H₂₇Br₂N₄O₂)(H₂O)(NO₃)]₂, the coordination polyhedron of the Cu atom is a square-planar environment. The structure consists of mononuclear units in which the copper(II) ions are linked in the plane by N, N′ iminato and O, O′ phenoxo atoms. In addition the crystal lattice contains one water molecule per unit. Graphical Abstract Dissymmetric ligand was efficiently synthesized and used to prepfsare a copper(II) complex which was characterized by X-ray diffraction      

Synthesis and Structure of the Dimeric Copper(II) Complex Tetrakis[<Emphasis Type="Italic">N</Emphasis>-thiazol-2-yl-(4-methylphenyl)sulfonamidate]dicopper(II)

Abstract The coordination chemistry of the ligand N-thiazol-2-yl-toluenesulfonamidate towards the copper(II) ion has been investigated using an electrochemical synthesis method. The X-ray structure of this complex was elucidated and is discussed. The compound crystallised in the monoclinic crystal system, P2₁/c space group with a = 17.3888(9), b = 16.3003(9), c = 18.3679(9) ? and β = 114.3640(10)°. Four bidentate sulfathiazolato anions bridge two metal centers in a paddle-wheel fashion, with the nitrogen atoms as donors to give a dimeric species with a Cu···Cu distance of 2.7859(5) ?. Graphical Abstract The coordination chemistry of the ligand N-thiazol-2-yl-toluenesulfonamidate towards the copper(II) ion has been investigated using an electrochemical synthesis method. The X-ray structure of the product has been elucidated and is discussed. Sulfathiazolato anions act as bridging ligands to give a dimeric species with a Cu···Cu distance of 2.7859(5) ?.