Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device

We compare the current density–voltage (J–V) and magnetoconductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) device (Au/P3HT(350 nm)/Al) before and after annealing above the glass transition temperature of 150 °C under vacuum. There is a decrease of more than 3 orders of magnitude in current density due to an increase of the charge injection barriers after de-doping through annealing. An increase, approaching 1 order of magnitude, in the negative MC response after annealing can be explained by a shift in the Fermi level due to de-doping, according to the bipolaron mechanism. We successfully tune the charge injection barrier through re-doping by photo-oxidation. This leads to the charge injection and transport transitioning from unipolar to ambipolar, as the bias increases, and we model the MC response using a combination of bipolaron and triplet-polaron interaction mechanisms.     

Synthesis,Crystal Structure,and Magnetic Properties of a New Dinuclear Iron Complex with Schiff Base Ligand

A new dinuclear iron(Ⅲ) complex has been synthesized and structurally characterized by X-ray crystallography: [FeⅢ2(L)(C6H5COO)(SO4)(CH3OH)2]·CH3CN·CH3OH(1, H3 L = N,N'-bis(salicylidene)-1,3-diamino-2-propanol). Complex 1 belongs to orthorhombic space group Pna21 with a = 11.4400(8), b = 22.9705(2), c = 12.5712(9) , V = 3303.5(4) 3, Z = 4, F(000) = 1576, Dc = 1.531 g·cm–3, Mr = 761.36, μ = 1.007 mm–1, S = 1.014, the final R = 0.0505 and wR = 0.1018. The crystal packing is stabilized by intermolecular O–H···O hydrogen bonds, forming an extended one-dimensional chain structure. The temperature dependence of magnetic susceptibility measurement shows that antiferromagnetic interaction is propagated between the metal centers. Fit as dinuclear arrangement gave parameters of J = 19.7 cm-1, g = 1.89 and R2 = 0.9999.     

AlSb晶体内二维磁极化子的磁场与温度效应

在考虑声子之间相互作用的同时，本文应用线性组合算符和微扰法研究了电子自旋对弱耦合二维磁极化子特性的影响。对AlSb晶体所作的数值计算结果表明，随着磁场的加强，磁极化子平均数减少；随着温度的增加，磁极化子平均数也增加；随着温度的增加，电子自旋作用以及声子之间相互作用都加强；随着磁场的加强，电子自旋作用增加而声子之间相互作用基本不变。     

2.4GHz动态CMOS分频器的设计

对现阶段的主流高速CMOS分频器进行分析和比较,在此基础上设计一种采用TSPC(truesingle phase clock)和E-TSPC(extended TSPC)技术的前置双模分频器电路.该分频器大大提高了工作频率,采用0.6μm CMOS工艺参数进行仿真的结果表明,在5V电源电压下,最高频率达到3GHz,功耗仅为8mW.     

等离子体刻蚀工艺控制模型分析

讨论了主因素分析法以及神经网络法在等离子体刻蚀工艺中的应用.结果表明主元素分析法可以实现对数据的压缩,而神经网络算法则显示出比传统的统计过程控制算法更好的准确性.     

两个DEA的逆问题的解法的探讨

文[1]提出了两个DEA的逆问题，并用搜索法来解．而本文根据所证的定理，对每个问题一般只要解二、三个线性规划问题就能得到答案．     

嵌人式与独立存储器设计上的差异分析和研究

进入21世纪,随着集成电路的发展,SoC(System on Chip)片上系统应运而生。而作为SoC重要组成部分的嵌入式存储器,在SoC中所占的比重正逐步增加,并起着越来越重要的作用,那么嵌入式存储器与独立的存储器芯片在设计上存在着哪些差异?对此本文将以NOR型闪存为例在制造工艺的选取、衍生产品的设计、功耗与噪声、后端功能仿真、测试与修复等方面进行分析和研究。     

宽带综合IP网的MPLS技术及其应用

多协议标记交换（MPLS）技术是综合利用网络第二层交换技术的有效性和第三层IP路由的灵活性等优点而产生的多层交换技术。通过在传统的IP包里加入标记，使路由转发依赖于标记，大大地提高IP包的转发速度，同时可使传统IP网络具有服务质量（QoS）能力。现主要分析MPLS体系结构，指出MPLS的一些应用。     

Platinum Binuclear Complexes as Phosphorescent Dopants for Monochromatic and White Organic Light‐Emitting Diodes

Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C^∧NPt(μ‐pz)₂PtC^∧N (where C^∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C^2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m^–2, a brightness of 3900 Cd m^–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (～ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (～ 5 %) and brightness (～ 600 Cd m^–2 at 10 V).     

光电设备电子机柜布线工艺研究

作为信号和电能载体的导线，同时也是噪声的载体和外来噪声侵入设备的媒体。描述了噪声通过导线侵入设备内部的方式，通过降低噪声的途径确定了机柜布线的原则，介绍了布线的要求和方法，最后提出了用布线槽布线的建议。