Application of HPLC to measure vanadium in environmental,biological and clinical matrices

Vanadate and vanadium compounds exist in many environmental, biological and clinical matrices, and despite the need only limited progress has been made on the analysis of vanadium compounds. The vanadium coordination chemistry of different oxidation states is known, and the result of the characterization and speciation analysis depends on the subsequent chemistry and the methods of analysis. Many studies have used a range of methods for the characterization and determination of metal ions in a variety of materials. One successful technique is high performance liquid chromatography (HPLC) that has been used mainly for measuring total vanadium level and metal speciation. Some cases have been reported where complexes of different oxidation states of vanadium have been separated by HPLC. Specifically reversed phase (RP) HPLC has frequently been used for the measurement of vanadium. Other HPLC methods such as normal phase, anion-exchange, cation-exchange, size exclusion and other RP-HPLC modes such as, ion-pair and micellar have been used to separate selected vanadium compounds. We will present a review that summarizes and critically analyzes the reported methods for analysis of vanadium salts and vanadium compounds in different sample matrices. We will compare various HPLC methods and modes including sample preparation, chelating reagents, mobile phase and detection methods. The comparison will allow us to identify the best analytical HPLC method and mode for measuring vanadium levels and what information such methods provide with regard to speciation and quantitation of the vanadium compounds.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

三角波比较电流控制研究

电流控制是有源滤波器中的关键问题之一,文章介绍了三角波比较电流控制方式的原理及其特点,将这种控制方式用于基于基波磁通补偿的串联混合型有源滤波器中推导了系统的传递函数,对不同参数情况进行了稳态和动态仿真分析,并给出了这种控制方式参数选择的一般原则。分析了三角波比较电流控制在三相有源滤波系统的电路模型,建立了三相系统的S imu link仿真模型并进行了仿真研究,仿真结果证明了对这种控制方式原理分析。     

变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性

通过对异质结材料上制作的肖特基结构变温C-V测量和传输线模型变温测量,研究了蓝宝石衬底AlGaN/GaN异质结高电子迁移率晶体管的直流特性在25～200℃之间的变化,分析了载流子浓度分布、沟道方块电阻、欧姆比接触电阻和缓冲层泄漏电流随温度的变化规律.得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论.同时,证明了GaN缓冲层漏电不是导致器件退化的主要原因.     

能动抛光磨盘的变形实验研究

 能动抛光磨盘实时产生不同的表面变形，在对大口径非球面光学元件进行精磨和抛光时实现与工件表面良好的大尺寸吻合，可以消除传统光学加工采用小尺寸磨头时带来的高频残余误差并提高加工效率。以加工直径1.3m左右，F/2的抛物面光学元件为例，对能动磨盘在不同离轴度时能够产生的变形进行了计算和实验。结果表明，能动磨盘能够以较高精度产生旋转对称或非对称的抛物面形状。对能动磨盘产生变形后的残余误差进行了分析。     

Toward High-Energy-Density Aqueous Lithium-Ion Batteries Using Silver Nanowires as Current Collectors

The lack of suitable lightweight current collectors is one of the primary obstacles preventing the energy density of aqueous lithium-ion batteries (ALIBs) from becoming competitive. Using silver nanowire (AgNW) films as current collectors and a molecular crowding electrolyte, we herein report the fabrication of ALIBs with relatively good energy densities. In the 2 m LiTFSI–94% PEG–6% H₂O solution, the AgNW films with a sheet resistance of less than 1.0 ohm/square exhibited an electrochemical stability window as broad as 3.8 V. The LiMn₂O₄//Li₄Ti₅O₁₂ ALIBs using AgNW films as the current collectors demonstrated an initial energy density of 70 Wh/kg weighed by the total mass of the cathode and anode, which retained 89.1% after 50 cycles.     

强流管辐射剂量率点灵敏度计数值误差范围确定

主要介绍了盖革-米勒计数管(GM计数管)中一种强流管的工作原理,强流管辐射剂量率点灵敏度计数率误差范围确定,以及误差范围如何计算,为以后的强流管产品生产和源室主管提供一些参考.     

Te溶剂Bridgman法CdMnTe晶体核辐射探测器的制备和表征

碲锰镉(CdMnTe)作为性能优异的室温核辐射探测器材料,可用于环境监测和工业无损检测领域。本文中采用Te溶剂Bridgman法生长In掺杂Cd_0.9Mn_0.1Te晶体,制备成10 mm×10 mm×2 mm大小的室温单平面探测器,研究了该探测器对²⁴¹Am@59.5 keV γ射线源的能谱响应。通过表征红外透过率、电阻率以及探测器能谱响应等参数,综合评定了探测器用CdMnTe晶体的质量、电学和探测器性能。结果表明,晶片的红外透过率均在55%以上,最好可达到60%。采用湿法钝化,100 V偏压下的漏电流由钝化前的9.48 nA降为钝化后的7.90 nA,钝化后的电阻率为2.832×10¹⁰ Ω·cm。在-400 V反向偏压下,CdMnTe探测器对²⁴¹Am@59.5 keV γ射线源的能量分辨率在钝化前后分别为13.53%和12.51%,钝化后的电子迁移率寿命积为1.049×10^-3 cm²/V。研究了探测器的能量分辨率随电压的变化特性,当偏压≤400 V时,探测器的能量分辨率主要由载流子的收集效率决定,而当偏压>400 V时,能量分辨率由漏电流决定。本文研究结果表明,Te溶剂Bridgman法生长的CdMnTe晶体质量较好,电阻率和电子迁移率寿命积满足探测器制备需求。     

基于盲源分离的变电站导线电流分布实时监测

针对变电站导线电流分布不平衡导致故障的问题,提出了一种盲源诊断法.首先使用基于非侵入式无芯和非接触式霍尔传感器的监测系统感应所有导线周围的磁通密度;其次利用磁通密度与电流之间的方程式来估计每根导线中的电流;再次将电流与热额定值进行比较,确定电流分布是否均匀;最后根据电流分布情况决定是否触发报警.实验结果表明,该方法能够...     

Mechanism of Topology Change of Flat Magnetic Structures

The paper investigates the processes of the magnetization reversal of perforated ferromagnetic films with strong anisotropy of the easy-plane type. The investigations have shown that, influenced by a current impulse passing through an antidot, an inhomogeneous magnetic structure is formed, which is accompanied by the localization of a quasiparticle with the +1 topological charge on the antidot and by an emission of a quasiparticle with a –1 charge. It is established that this scenario of the film magnetization reversal underlies a reformation of its inhomogeneous structure also if two or four antidots are present in the film, irrespective of the fact of through which antidots and in which directions the currents are passed. The results of the research obtained by using two independent methods (solving the Landau–Lifshitz–Gilbert equations and analyzing the lattice model) demonstrated good agreement between the two. It is shown that a magnetic film comprising two or four antidots can be used as a memory cell for recording data in the ternary system.