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21.
中国邮路问题的一个解法   总被引:6,自引:1,他引:5  
本给出中国邮路问题的一个解法。虽然它仍只是初始方案,但因考虑了问题的足够信息,因而这种方案至少拉近了与最优解的距离。  相似文献   
22.
 用非耦合求解方法计算Level Set函数方程与流体力学方程组,应用重新初始化的Level Set函数确保距离函数性质,流体力学方程组采用二阶精度多介质流波传播差分格式计算,重新初始化方程采用五阶WENO格式计算。并给出了二维可压缩多介质流界面运动的计算结果。  相似文献   
23.
A previously developed laser spallation technique has been modified to measure the tensile strength of thin film interfaces in-situ at temperatures up to 1100°C. Tensile strengths of Nb/A-plane sapphire, FeCrAl/A-plane sapphire and FeCrAlY/A-plane sapphire were measured up to 950°C. The measured strengths at high temperatures were substantially lower compared with their corresponding strengths at ambient temperature. For example, at 850°C, the interface tensile strength for the Nb/sapphire (151 ± 17 MPa), FeCrAl/sapphire (62 ± 8 MPa) and FeCrAlY/sapphire (82 ± 11 MPa) interface systems were lower by factors of approximately, 3, 5, and 8, respectively, over their corresponding ambient values. These results underscore the importance of using such in-situ measured values under operating conditions as the failure criterion in any life prediction or reliability models of such coated systems where local interface temperature excursions are expected. The results on alloy film interfaces also demonstrate that the presence of Y increases the strength of FeCrAl/Al2O3 interfaces.  相似文献   
24.
Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ013 meV, the electron effective mass of m*0.10m0 seven times of the band edge mass in bulk InSb and the effective g-factor of |g*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.  相似文献   
25.
Films of amorphous polystyrene (PS) with a weight-average molecular weight (Mw) of 225 × 103 g/mol were bonded in a T-peel test geometry, and the fracture energy (G) of a PS/PS interface was measured at the ambient temperature as a function of the healing time (th) and healing temperature (Th). G was found to develop with (th)1/2 at Th = Tg-bulk − 33 °C (where Tg-bulk is the glass-transition temperature of the bulk sample), and log G was found to develop with 1/Th at Tg-bulk − 43 °C ≤ ThTg-bulk − 23 °C. The smallest measured value of G = 1.4 J/m2 was at least one order of magnitude larger than the work of adhesion required to reversibly separate the PS surfaces. These three observations indicated that the development of G at the PS/PS interface in the temperature range investigated (<Tg-bulk) was controlled by the diffusion of chain segments feasible above the glass-transition temperature of the interfacial layer, in agreement with our previous findings for fracture stress development at several polymer/polymer interfaces well below Tg-bulk. Close values of G = 8–9 J/m2 were measured for the symmetric interfaces of polydisperse PS [Mw = 225 × 103, weight-average molecular weight/number-average molecular weight (Mw/Mn) = 3] and monodisperse PS (Mw = 200 × 103, Mw/Mn = 1.04) after healing at Th = Tg-bulk − 33 °C for 24 h. This implies that the self-bonding of high-molecular-weight PS at such relatively low temperatures is not governed by polydispersity. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1861–1867, 2004  相似文献   
26.
The effect of the triblock copolymer poly[styrene‐b‐(ethylene‐co‐butylene)‐b‐styrene] (SEBS) on the formation of the space charge of immiscible low‐density polyethylene (LDPE)/polystyrene (PS) blends was investigated. Blends of 70/30 (wt %) LDPE/PS were prepared through melt blending in an internal mixer at a blend temperature of 220 °C. The amount of charge that accumulated in the 70% LDPE/30% PS blends decreased when the SEBS content increased up to 10 wt %. For compatibilized and uncompatibilized blends, no significant change in the degree of crystallinity of LDPE in the blends was observed, and so the effect of crystallization on the space charge distribution could be excluded. Morphological observations showed that the addition of SEBS resulted in a domain size reduction of the dispersed PS phase and better interfacial adhesion between the LDPE and PS phases. The location of SEBS at a domain interface enabled charges to migrate from one phase to the other via the domain interface and, therefore, resulted in a significant decrease in the amount of space charge for the LDPE/PS blends with SEBS. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2813–2820, 2004  相似文献   
27.
采用热重分析 (TGA)、傅立叶红外光分析 (FTIR)和磁头起飞降落 (CSS)等试验方法 ,研究了硬盘磁头 碟界面润滑层PFPE的失效机理以及添加剂X 1P在磁头 碟界面润滑剂中的作用 .研究结果表明 ,高温条件下磁头材料Al2 O3 会诱导磁头 碟界面润滑剂PFPE发生歧化降解 ,造成磁头 碟界面润滑层失效 ;添加剂X 1P因其特殊的分子结构和化学性能 ,可作为一种有效稳定剂添加到磁头 碟润滑剂PFPE中 ,减弱磁头材料Al2 O3 作为催化反应中心的催化反应活性 ,减缓磁头 碟界面润滑剂PFPE的高温歧化降解 ,改善磁头 碟界面的CSS性能  相似文献   
28.
本文介绍了 TMN 网管系统的体系结构,进而讨论了接入网网管系统的体系结构和管理接口的有关问题。  相似文献   
29.
何进  张兴  黄如  王阳元 《半导体学报》2002,23(3):296-300
提出了用复合栅控二极管新技术提取MOS/SOI器件界面陷阱沿沟道横向分布的原理,给出了具体的测试步骤和方法.在此基础上,对具有体接触的NMOS/SOI器件进行了具体的测试和分析,给出了不同的累积应力时间下的界面陷阱沿沟道方向的横向分布.结果表明:随累积应力时间的增加,不仅漏端边界的界面陷阱峰值上升,而且沿沟道方向,界面陷阱从漏端不断向源端增生.  相似文献   
30.
布里奇曼法生长碲镉汞晶体的固液界面形态研究   总被引:2,自引:0,他引:2  
文中综述了布里奇曼法及加速坩埚旋转技术的布里奇曼法生工碲镉汞晶体过程中固液界面形态的研究结果,简单讨论了固液界面形态对组分分布的影响,并将两种技术所得的组分分布结果进行了比较,在分析影响固液界面形态因素的基础上,认为加速坩埚旋转技术是目前改善固液界面形态的有效方法。  相似文献   
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