基于神经网络的非线性预测在恒温系统中的应用

针对恒温系统的非线性、大延时等特点,提出了基于RBF神经网络的恒温系统的预测模型,采用非线性预测控制、引入模型误差项和改进后的PI控制器,并且在Matlab7.2/Simulink这个平台下构建了整个系统的仿真模型。仿真结果表明：所建立的模型系统具有良好的动静态性能且增强了系统的抗干扰性。     

基于数字锁相环的温控变频电路设计

CC4046集成电路锁相环采用RC型压控振荡器,外接RC作为充放电元件,电路简单、成本低廉、实用价值大,可广泛应用于广播电视系统,各种通信系统,以及频率合成,自动控制及时钟同步等技术领域。利用数字集成锁相环组成温控变频电路可以克服常见温控系统可靠性低、抗干扰能力差的缺点,为温度的精确测量及需要进行温度检测控制的设备提供了一种可行的电路设计方案。     

基于ATmega16L单片机的温度控制系统设计

设计一种基于ATmega16L单片机的温度控制系统,阐述该系统的软硬件设计方案。采用模块化设计方法,利用增量式PID算法使被控对象的温度值趋于给定值。实验结果表明该系统具有良好的检测和控制功能。     

A novel on-chip high to low voltage power conversion circuit

A novel power supply transform technique for high voltage IC based on the TSMC 0.6μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/℃. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.     

衬底温度对ZnO薄膜氧缺陷的影响

采用射频磁控溅射在石英玻璃和单晶硅Si(100)衬底上制备了ZnO薄膜，研究了衬底温度对ZnO薄膜中氧缺陷的影响。实验发现，ZnO薄膜c轴取向性随温度的升高而增强；当衬底温度达到550。C时，XRD谱上仅出现一个强的(002)衍射峰和一个弱的(004)衍射峰，显示ZnO具有优异c轴取向性。同时，随着温度的升高，ZnO薄膜的紫外透射截止边带向高波长方向漂移，其电导率也随衬底温度的升高逐渐增大，表明薄膜中的氧缺陷逐渐增多。这种氧缺陷是由于ZnO的氧平衡分压高于Zn所致，可通过提高溅射气体中氧含量来改善。     

Design of Engineered Elastomeric Substrate for Stretchable Active Devices and Sensors

In the field of flexible electronics, emerging applications require biocompatible and unobtrusive devices, which can withstand different modes of mechanical deformation and achieve low complexity in the fabrication process. Here, the fabrication of a mesa‐shaped elastomeric substrate, supporting thin‐film transistors (TFTs) and logic circuits (inverters), is reported. High‐relief structures are designed to minimize the strain experienced by the electronics, which are fabricated directly on the pillars' surface. In this design configuration, devices based on amorphous indium‐gallium‐zinc‐oxide can withstand different modes of deformation. Bending, stretching, and twisting experiments up to 6 mm radius, 20% uniaxial strain, and 180° global twisting, respectively, are performed to show stable electrical performance of the TFTs. Similarly, a fully integrated digital inverter is tested while stretched up to 20% elongation. As a proof of the versatility of mesa‐shaped geometry, a biocompatible and stretchable sensor for temperature mapping is also realized. Using pectin, which is a temperature‐sensitive material present in plant cells, the response of the sensor shows current modulation from 13 to 28 °C and functionality up to 15% strain. These results demonstrate the performance of highly flexible electronics for a broad variety of applications, including smart skin and health monitoring.     

基于光纤传感实验仪的设计与扩展性实验

光纤传感实验仪是一种适合于高等院校光电子技术、微电子技术、电子工程等专业的实验教学仪器设备,具有十分优良的实验拓展性。为适应提高学生素质和能力培养的教学目标,本文重点阐述了如何在光纤传感实验仪所能够完成的5个基本实验的基础上进行深入的开发与扩展,以进一步完成更多的设计性、研究性实验。给出了在光纤传感实验仪的基础上所设计开发的光纤压力、温度、液位等实验。     

高精度PWM输出的温度传感器MAX6666/6667的特性及应用

介绍了MAXIM公司研制的新型高精度PWM输出温度传感器MAX6666/6667的主要性能及其典型应用电路。     

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ～400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ～5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.     

一种基于ARM的人体红外测温系统

提出了一种基于ARM处理器的人体红外测温系统.该系统由MLX90615高精度医用数字红外传感器、超声波传感器、环境温度传感器、主控CPU单元和其他外围电路组成.MLX90615采集人体额头的红外辐射温度值并将其输入CPU,经过温度补偿和距离补偿,额头温度值被转换成对应的人体温度值,并显示在液晶屏上.实验表明,与其他系统...