Ageing of AgCl/Cd nuclear track detectors monitored by luminescence spectroscopy

Abstract

Solid-state nuclear track detectors, made of Cd doped AgCl crystals, are commonly prepared by rolling into the form of thin foils. Subsequent long-term relaxation is however needed to obtain good quality tracks. The present communication shows for the first time that this detector “ageing” is reflected in lowtemperature (77 K) luminescence spectra. Maximum of the emission band shows a slow (lasting for ～ 100 hours) blue shift, the magnitude of which (as much as 25 nm) depends on the compression ratio caused by the rolling. The shift is believed to be due to the rearrangement of Cd⁺⁺ ions around freshly introduced dislocations. This finding opens the possibility of monitoring non-destructively the process of detector ageing and to determine the minimum time required for saturation.     

Cd1—xZnxTe（x=0.04）表面处理的低温拉曼散射和电学特性研究

测量了几种不同处理的Cd1-xZnxTe(x=0.04)表面的傅里叶变换拉曼散射光谱和电流－电压（I－V）特性。通过分析拉曼光谱反Stokes分量,并与表面I－V特性进行比较,结果表明与表面处理相联系的晶格声子的行为反映了表面完整性的变化,Te沉淀是影响表面质量的关键因素,并对有关表面处理方法的实际应用进行了讨论。     

Fermionic representation of a symmetrically frustrated SU(3) model: Application to the Haldane-gap antiferromagnets

The one-dimensional spin 1 bilinear-biquadratic model is re-expressed in a symmetrically frustrated SU(3) model, which facilitates us to introduce a fermionic representation and related bond-operator mean-field theory. By analyzing the gap and the static spin susceptibility, we shows that this treatment can easily capture the commensurate and incommensurate Haldane gap phases.     

Clathrate formation and dissociation in vapor/water/ice/hydrate systems in SBA-15, sol-gel and CPG porous media, as probed by NMR relaxation, novel protocol NMR cryoporometry, neutron scattering and ab initio quantum-mechanical molecular dynamics simulation

The Gibbs-Thomson effect modifies the pressure and temperature at which clathrates occur, hence altering the depth at which they occur in the seabed. Nuclear magnetic resonance (NMR) measurements as a function of temperature are being conducted for water/ice/hydrate systems in a range of pore geometries, including templated SBA-15 silicas, controlled pore glasses and sol-gel silicas. Rotator-phase plastic ice is shown to be present in confined geometry, and bulk tetrahydrofuran hydrate is also shown to probably have a rotator phase. A novel NMR cryoporometry protocol, which probes both melting and freezing events while avoiding the usual problem of supercooling for the freezing event, has been developed. This enables a detailed probing of the system for a given pore size and geometry and the exploration of differences between hydrate formation and dissociation processes inside pores. These process differences have an important effect on the environment, as they impact on the ability of a marine hydrate system to re-form once warmed above a critical temperature. Ab initio quantum-mechanical molecular dynamics calculations are also being employed to probe the dynamics of liquids in pores at nanometric dimensions.     

Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se2 solar cells

The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu₂ZnSnSe₄ (CZTSe) thin‐film solar cells, by using a Cd²⁺ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se₂ (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7 min at 70 °C using a basic solution of cadmium acetate. X‐ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density–voltage (J–V), external quantum efficiency, and drive‐level capacitance profiling measurements. For the CZTSe‐based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency (η) from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (R_S) of the dark and light J–V, as determined using the one‐diode model. The crossover effect between dark and light J–V curves is also significantly reduced by Cd PE treatment. Copyright © 2015 John Wiley & Sons, Ltd.     

ICP-AES测定葡萄糖酸钙中Pb、As、Cd等9个杂质元素

本文应用ICP-AES直接测定了葡萄糖酸钙中的Pb、As、Cd等9个杂质元素,对样品的消解方法、基体和酸介质的影响等进行了讨论.用基体匹配法消除钙基体的干扰,9个杂质元素测定的测定范围为:Pb 0.0008%-0.08%,Cu、Mg 0.0001%-0.01%,其余元素0.0003%-0.03%.加标回收率为95.8%-100.0%,相对标准偏差为0.16%-3.61%.     

ICP-AES法测定丹参中的镉和铅

建立了利用电感耦合等离子体原子发射光谱(ICP-AES)法测定丹参中重金属元素Cd和Pb的方法,比较了干灰化法和湿化法两种样品处理方法对分析结果的影响,并测定了山东一些地区丹参中的Cd和Pb含量。结果表明：采用电感耦合等离子体原子发射光谱法检测丹参中的Cd和Pb,最低检出限(DL)分别为1.92和1.07 ng·mL-1;相对标准偏差(RSD)分别为3.14%和1.83%;回收率分别为103.05%和96.24%。利用湿法消解样品,精密度好,回收率高,优于干灰化法。干灰化法适合测定丹参中Pb,但不适合测定Cd,其回收率仅为0.1%。用湿法消解样品,测定不同产地丹参的Cd和Pb含量,结果表明：所测地区丹参的Cd, Pb含量大大低于《中华人民共和国药典》(2005)规定的中药材重金属含量标准,符合GAP生产的要求。     

板栗内皮对水溶液中镉离子和铅离子的吸附

研究了板栗内皮对水溶液中金属离子(Cd2+,Pb2+)的吸附过程,以及吸附过程中不同条件对其吸附能力的影响.通过对反应时间、温度、pH、初始金属离子浓度等因素的控制,设计不同单一变量确定在不同条件下的吸附能力,利用红外光谱确定板栗内皮上参与反应的主要基团.结果表明,板栗内皮吸附Cd2+,Pb2+理论最佳吸附条件分别为p...     

电感耦合等离子体-原子发射光谱法测定CPU导热硅脂中的铅和镉

采用几种消解方法对样品进行前处理,建立了电感耦合等离子体-原子发射光谱法(ICP-AES)同时测定导热硅脂中铅、镉等有害金属元素的方法.结果表明:高温灰化法Pb、Cd有损失;(1 1)王水湿法消解法Pb有损失;硝酸-高氯酸湿法消解法Pb和Cd几乎无损失;该方法精密度范围为0.22%-2.40%,Pb和Cd检出限分别为0.030μg·mL-1和0.006μg·mL-1.与石墨炉原子吸收光谱法(GFAAS)相比,ICP-AES具有简单、快速、准确等特点.     

Structure and electrical transport properties of bismuth thin films prepared by RF magnetron sputtering

Bismuth thin films were prepared on glass substrates with RF magnetron sputtering and the effects of deposition temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth and the coalescence of grains were observed above 393 K with field emission secondary electron microscopy. Continuous thin films could not be obtained above 448 K because of the segregation of grains. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility in exponential ways until 403 K. Resistivity of sputter deposited bismuth films has its minimum (about 0.7 × 10⁻³ Ω cm) in range of 403-433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to the cancellation of the decrease of carrier density and the increase of mobility. However, the abrupt change of electrical properties of film annealed above 523 K was observed, which is caused by the oxidation of bismuth layer.