High growth rate process in a SiC horizontal CVD reactor using HCl

The results of a new epitaxial process using an industrial 6 × 2″ wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H₂ > 0.05%) and an increase of the growth rate until about 20 μm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (I-V) characteristics.     

Activity of TiO2 deposited by the CVD method on ammoxidized surface of a carbonaceous material in hydrogenation of styrene

Hydrogenation of styrene has been applied as a test reaction to study the catalytic activity of TiO₂ deposited by the CVD (chemical vapour deposition) method on the surface of a carbonaceous material enriched in nitrogen (C_N).     

Dependence of surface morphology of CVD diamond films on deposition conditions

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Large-area boron carbide protective coatings for controlled thermonuclear research prepared byin situ plasma CVD

Impurity release from the first wall and components facing the hot plasma in Tokamak devices for controlled fusion research and the concomitant pollution of the plasma lead to enhanced energy losses and deuterium-tritium luel dilution. Both these effects can prevent reaching the ignition conditions. The recently developed technique for large areain situ deposition of boron carbide protective coatings by means of plasma-induced chemical vapor deposition enables one to significantly improve the purity of the fusion plasma. The prospects of approaching the scientific break-even in the large machines of the Tokarnak type has been increased.Extended version of an invited paper presented at the 10th International Symposium on Boron, Borides, and Related Compounds, Albuquerque, New Mexico, August 1990.The term Tokarnak is an abbreviation of the Russian name toroidal magnetic chamber.     

A Three-Dimensional Two-Phase Model for Thermal Plasma Chemical Vapor Deposition with Liquid Feedstock Injection

In this paper, a comprehensive model for thermal plasma chemical vapor deposition (TPCVD) with liquid feedstock injection is documented. The gas flow is assumed to be steady, of a single temperature. Radiation and charged species contributions are excluded, but extensive homogeneous and heterogeneous chemistry is included. The liquid phase is traced by considering individual droplets. Discussion on the model's application to diamond production from acetone in a hydrogen–argon plasma is included. The major conclusions are: (1) Liquid injection possesses a capability to deliver the hydrocarbon precursor directly onto the deposition target. (2) For the case of complete evaporation of the droplet before reaching the substrate, the deposition rate is similar to that obtained with gaseous precursors. (3) The computational results compare well with experimental data. The modeling results can be used to optimize the injection parameters with regard to the deposition rate.     

Carbon film growth on iron substrates by a CVD method

Carbon film coatings have been produced by a hot‐wall chemical vapor deposition (CVD) method under moderate conditions from pyrolysis of a mixture of propane and argon on an Fe(110) substrate at temperatures of 800–900 °C for different deposition times. The effects of temperature and reaction time on the growth of the carbon films were studied. Field‐emission scanning electron microscopy (FESEM), Raman microscopy, Auger electron spectroscopy (AES) and x‐ray diffraction methods have been performed to study the surface morphologies, growth features and microstructures of the carbon film coatings. The FESEM analyses indicated that carbon films on an Fe substrate consisted of flat‐layer and filamentous morphologies. Raman and AES analyses showed that the carbon initially was crystalline but the degree of disorder in the top layer of the carbon film increased with increasing deposition temperature. High‐resolution transmission electron microscopy studies are also in agreement with Raman results. The same trend was observed when the deposition time was increased from 5 to 30 min. Copyright © 2005 John Wiley & Sons, Ltd.     

Crystal structure of oxotitanium(IV) 2,2,6,6-tetramethyl-3,5-heptanedionate

The structure of titanyl dipivalylmethanate TiO(dpm)₂ has been studied by X-ray diffraction analysis. The compound has a molecular structure formed by isolated centrosymmetrical dimers [TiO(dpm)₂]₂; the unit cell contains two structurally related, crystallographically unique binuclear molecules. The Ti...Ti distance in the dimer is 2.73 Å. Crystal data for Ti₂C₃₆H₇₆O₁₀: a = 32.477(6) Å, b = 14.409(3) Å, c = 25.630(5) Å; β = 107.82(3)°, space group C2/c, Z = 8, d _calc = 1.002 g/cm³.     

XRD-Studies of SiC/Si layers on carbon substrates

Structural investigations of thin films of SiC, SiC with free silicon and various titanium suicides (TiSi₂, TiSi and Ti₅Si₃) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Can mono- or di-butyltin chlorides produce tributyltin chloride at elevated temperatures? Implications for applications in chemical vapour deposition

The thermolysis of the butyltin chlorides at 200-300 °C in the liquid phase has been investigated by ¹H, ¹³C, and ¹¹⁹Sn NMR spectroscopy. The stabilities follow the order: Bu₂SnCl₂ > Bu₃SnCl > BuSnCl₃. Only tributyltin chloride showed any evidence of redistribution, giving dibutyltin dichloride, together with metallic tin, butane, and but-1-ene, which would be formed by decomposition of tetrabutyltin. Dibutyltin dichloride decomposed to give mainly butane with no other apparent liquid organotin compound. Butyltin trichloride gave butane, some butene, and metallic tin, and showed no evidence of forming tributyltin chloride by the redistribution reaction, which would have environmental implications for its use in the CVD coating of glass.     

CVD Reactions of TiCl4 with Ammonia： a Quantum Chemical Study

Based on density functional calculations, the mechanism and the energetic course of the chemical vapor deposition （CVD） reaction of TiCl4 with NH3 were studied at the level of B3LYP with 6-311g（d） basis set. Furthermore, the polymerization processes of dimerization, trimerization and tetramerization were investigated. The calculation results indicate that the formation of polymers is favored at the elimination reaction. On the basis of the calculated energetics, a possible mechanism of the reduction reaction has been proposed.