残留农药残留量速测仪光电系统的实验研究

介绍了“残留农药速测仪”光电系统的设计依据。重点介绍单色光发生器的光学部件、光路系统和棱镜分光;另外介绍了光电转换器件的选择方法;最后用实验验证了对仪器的稳定性和重现性的影响。     

A Novel Sampling Switch Suitable for Low-Voltage Analog-to-Digital Converters

提出了一种适用于低电源电压的新型高线性度采样开关.与传统低电压采样开关相比,这种新型采样开关不仅消除了MOS开关由于栅源电压随输入信号变化所引入的非线性,而且进一步消除了MOS开关由于阈值电压随输入信号变化引入的非线性.这是通过采用一个与采样MOS开关具有相同阈值电压的"复制"开关得以实现的.基于Chartered 0.35μm标准CMOS工艺,文中设计了一个此类新型MOS采样开关,在输入信号为0.2MHz正弦波,峰峰值为1.2V,采样时钟频率为2MHz时,无杂散动态范围达到111dB,比栅压自举开关提高了18dB;同时导通电阻的变化减小了90%.这种新型采样开关特别适用于低电压,高精度模数转换器.     

半行波半导体激光放大器超短光脉冲响应及开关特性的实验研究

本文对半行波半导体激光放大器的脉冲响应及开关特性进行了实验研究。脉宽为27ps,重复频率为1GHz的超短光脉冲串通过放大器后脉冲无展宽。当对放大器的注入电流进行调制时,放大器可起到高速光开关的作用。     

假火花开关初始放电过程的理论计算

假火花开关具有耐压高、放电电流大及电流上升速率快的优点。本文利用流体模型及当地场近似，对其放电过程进行了理论计算。结果表明，在放电初始阶段，空心阴极效应起关键作用。同时，对不同初始条件（初始电子、离子密度不同）及不同边界条件（开关结构尺寸不同）的放电过程进行了计算。给出了放电时间、放电电流、最佳阴阳极距离和阴极孔尺寸大小。     

Ge_xSi_（1－x）／Si异质结无间距定向耦合光开关模型分析

提出一种简便可行的ＧｅｘＳｉ１－ｘ异质结无间距定向耦合光开关（ＢＯＡ型－ＢｉｆｕｒｃａｔｉｏｎＯｐｔｉｃａｌＡｃｔｉｖｅ）模型分析方法。该方法采用等离子体包散效应分析了这种光开关的电学调制机理；采用异质结超注原理分析了开关的电学性质；并根据典单模脊形波导理论和上述分析，设计了利用双模干涉机制工作的Ｇｅ０．０５ＳＩ０．９５／Ｓｉ异质结ＢＯＡ型光开关的结构参数和电学参数。     

GW──I磁传感器实验仪研制

本文介绍了自制磁传感器实验仪的原理。     

基于Fabry-Perot结构的可调波长选择光开关

本文提出波长选择光开关的概念,首次研制出一个基于Fabry-Perot结构的可调波长选择光开关,该开关为2×2光纤端口,每个端口携带N个波长,工作时可以选1个或多个波长,插入损耗小于3dB,波长调谐范围10nm,调谐机构为一对多层三明治结构的压电陶瓷,具有驱动电压低,小于5V的驱动电压可以达到3.3nm的调谐,最大开关时间为1毫秒,开关比优于30dB.最后还分析了其基本透射与反射光谱性能,并讨论其对光通信、光交换网络产生的重要应用价值.     

0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications

This paper describes the design and implementation of a transmit/receive switch for 2.4 GHz ISM band applications. The T/R switch is implemented in a 0.35 m bulk CMOS process and it occupies 150 m · 170 m of die area. A parasitic MOSFET model including bulk resistance is used to optimize the physical dimensions of the transistors with regard to insertion loss and isolation. The measured insertion loss is 1.3 dB without port matching. Simulations using measured s-parameters indicate that an insertion loss of 0.8 dB can be obtained with a conjugate match. The measured isolation is 42 dB and the maximum transmit power is 16 dBm.     

Spectral anomalies and spectral switches of partially coherent and polychromatic light diffracted at an aperture

Inrecentyearsanewbranchofmodernphysicalopticscalledsingularoptics[1]hasbeendeveloped.In2002theworkinsingularopticswasextendedfrommonochromaticlighttospatiallyfullycoherentandpolychromaticlightbyGburetal.[2—4].Itwasfoundthat,whenaconverging,spatiallyfullycoherentandpolychromaticsphericalwaveisdiffractedatanaperture,anomalousspectralchangestakeplaceclosetozerosoftheintensityinthefarfield;i.e.thespectrumisredshiftedatsomepoints,blueshiftedatothers,andsplitintotwolineselsewhere.Thepredictionsofsp…     

Delayed breakdown diode and its optimal design for solid state picosecond closing switch

We study a Si-based diode with a p⁺nn⁺ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters.