Charge density study under high pressure

The experimental and analytical method of the high-pressure powder experiment at BL10XU, SPring-8, is described. There is no doubt that BL10XU must be one of the most appropriate beam lines for high pressure X-ray diffraction experiment taking advantage of third generation synchrotron source. As an example of the advanced charge density study under high pressure, the structural change of Cs₂Au₂Br₆ by applying pressure is studied by Rietveld/MEM analysis. It reveals that the structural change of Cs₂Au₂Br₆ by applying pressure occurs basically at electron level, such as valence state change and chemical bonding, which may be called the electronic phase transition.     

Partially Classical States of a Boson Field

Employing positive-definiteness arguments we analyse Boson field states, which combine classical and quantum mechanical features (signal and noise), in a constructive manner. Mathematically, they constitute Bauer simplexes within the convex, weak-*-compact state space of the C*-Weyl algebra, defined by a presymplectic test function space (smooth one-Boson wave functions) and are affinely homeomorphic to a state space of a classical field. The regular elements are expressed in terms of weak distributions (probability premeasures) on the dual test function space. The Bauer simplex arising from the bare vacuum is shown to generalize the quantum optical photon field states with positive P-functions.     

Epoxy based coatings on glass: strengthening mechanisms

Glass may be strengthened by epoxy coatings although the strengthening mechanisms remain unclear. Possible strengthening mechanisms are reviewed and are used to analyse strength data for both a solvent based and a water based coating system. The coatings either fill (solvent based coatings), or partially fill (water based coatings) surface cracks and it is shown that closure stresses arising from the thermal expansion mismatch of the coating within these cracks can account for the observed degrees of strengthening. It is also demonstrated that other suggested mechanisms such as flaw healing cannot fully account for the observed degree of strengthening.     

F-H实验仪与光栅光谱仪连用观测253.7nm谱线

通过F-H实验仪和光栅光谱仪的连用，可实时观测汞原子从6s6s1So态激发到6s6sSP1态，退激时，辐射出能量为4．9eV的光量子，其波长为253．7nm．     

Inner Radius of Univalence for a Strongly Starlike Domain

 The inner radius of univalence of a domain D with Poincaré density ρ _D is the possible largest number σ such that the condition ∥ S _f ∥ _D  = sup _{w∈ D} ρ _D (w) ⁻²∥ S _f (z) ∥ ≤ σ implies univalence of f for a nonconstant meromorphic function f on D, where S _f is the Schwarzian derivative of f. In this note, we give a lower bound of the inner radius of univalence for strongly starlike domains of order α in terms of the order α. The author was partially supported by the Ministry of Education, Grant-in-Aid for Encouragement of Young Scientists, 11740088. A part of this work was carried out during his visit to the University of Helsinki under the exchange programme of scientists between the Academy of Finland and the JSPS. Received November 26, 2001; in revised form September 24, 2002 Published online May 9, 2003     

1H and 13C NMR assignments of abietane diterpenes from Aegiphila lhotzkyana

An NMR study of one new and several known abietane diterpenes isolated from the roots of Aegiphila lhotzkyana is described. In addition to 1D NMR, several 2D shift‐correlated NMR pulse sequences (¹H–¹H‐COSY, NOESY, HMQC and HMBC) were used to establish all the structures, and unambiguously perform the ¹H and ¹³C chemical shift assignments of the new natural diterpene and three derivatives, the NMR data for which have not been reported previously. Revision of current data assignment for teuvincenone H is also suggested. Copyright © 2003 John Wiley & Sons, Ltd.     

π1-classification of real arrangements with up to eight lines

One of the open questions in the geometry of line arrangements is to what extent does the incidence lattice of an arrangement determine its fundamental group. Line arrangements of up to 6 lines were recently classified by K.M. Fan (Michigan Math. J. 44(2) (1997) 283), and it turns out that the incidence lattice of such arrangements determines the projective fundamental group. We use actions on the set of wiring diagrams, introduced in (Garber et al. (J. Knot Theory Ramf.), to classify real arrangements of up to 8 lines. In particular, we show that the incidence lattice of such arrangements determines both the affine and the projective fundamental groups.     

Crack path instabilities in DCDC experiments in the low speed regime

We studied the low speed fracture regime (10⁻⁴-10⁻⁹ m s⁻¹) in different glassy materials (soda-lime glass, glass ceramics) with variable but controlled length scale of heterogeneity. The chosen mechanical system enabled us to work in pure mode I (tensile) and at a fixed load on double cleavage drilled compression specimen. The internal residual stresses of studied samples were carefully relaxed by appropriate thermal treatment. By means of optical and atomic force microscopy techniques fracture surfaces have been examined. We have shown for the first time that the crack front line underwent an out-of-plane oscillating behavior as a result of a reproducible sequence of instabilities. The wavelength of such a phenomenon is in the micrometer range and its amplitude in the nanometer range. These features were observed for different glassy materials providing that a typical length scale characterizing internal heterogeneities was lower than a threshold limit estimated to few nanometers. This effect is the first clear experimental evidence of crack path instabilities in the low speed regime in a uniaxial loading experiment. This phenomenon has been interpreted by referring to the stability criterion for a straight crack propagation as presented by Adda-Bedia et al. [Phys. Rev. Lett. 76 (1996) 1497].     

利用C++Builder 5.0开发原理框图绘图软件

介绍了原理框图各种图形的数据存储方法，利用C^ Builder5.0开发了原理框图的绘图软件，实现了原理框图绘制的基本功能。     

C51嵌套汇编子程序在阻抗测试仪研制中的应用

C51嵌套汇编子程序，充分发挥了两种语言自的优势，介绍了C51调用汇编子程序的接品规则，并通过阻抗测试仪程序开发的例子予以详细说明。