非制冷长波红外焦平面列阵现状

文章介绍了非制冷测辐射热计和铁电陶瓷焦平面列阵的现状，包含8万个非制冷氧化钒红外探测器的焦平面列阵已制成热像仪，系统的噪声等效温差（NETD）为0．04℃，不需要制冷和机械调制入射辐射。多晶硅热敏电阻和硅p－n结温差电堆焦平面列阵的研究工作取得了进展，用溅射和化学汽相淀积技术已制成128×128元硅薄膜测辐射热计焦平面列阵，单元探测器的探测率为1×109cmHzW－1；128×128元温差电堆焦平面列阵的NETD为0．5℃。利用热释电效应和介电常数温度变化的铁电陶瓷焦平面列阵制成的热像仪，NETD已达到0．047℃。     

SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays

Uncooled microbolometer thermal infrared detector technology is presently revolutionizing the infrared technology field. Essential improvement of the cost/performance ratio would be achieved by microbolometer arrays with higher sensitivity, since this allows the use of simpler and less costly camera optics, which implies a lower cost of the complete IR camera. The sensitivity of the microbolometers depends critically on the signal-to-noise ratio of the integrated thermistor material, which is set by its temperature coefficient of resistance (TCR) and noise characteristics.In this work we have investigated the use of epitaxial silicon-germanium/silicon (SiGe/Si) quantum well (QW) structures as a thermistor material. Si_0.68Ge_0.32/Si QW structures typically give a TCR of 3.0%/K and low noise values. A calculation of the noise equivalent temperature NETD of a bolometer gives 25 mK using the following assumptions: f-number = 1, 30 Hz video frame rate for a 640 × 480 array, with a pixel size 25 × 25 μm.Higher TCR values are foreseen for SiGe/Si quantum dot structures, and the noise is expected to be similar to the QW based structures.