Infrared photography in liquid films by thermocapillary convection

A thermal imaging system using a liquid-liquid interface has been studied, which utilizes the extreme temperature sensitivity of surface tension (Marangoni Effect). Theoretical considerations for the design and the operating conditions of the device are given. The experimental results using a detection by polarization interferometer indicate that the limitations on such a device are primarily due to the finite film thickness of the upper solution (on the order of 50–80 m). This system was able to image 1°C with a limiting resolution of ten lines pair per millimeter.     

非制冷红外焦平面列阵进展

叙述了室温下工作的，或在使用温差电制冷条件下近室温工作的长波红外焦平面列阵的最新进展。主要介绍两种类型的器件：一类是利用铁电材料的热释电效应以及介电常数的温度变化制作的探测器，常用材料是钛酸锶钡和钽钪酸铅铁电陶瓷；另一类是利用电阻温度变化的测辐射热器，材料为氧化钒。用这两类室温工作的红外焦平面列阵制作的热像仪的噪声等效温差已达到０．１℃。装有这种热瞄具的步枪已经历过实战考验。热瞄具还可用于夜间车辆     

利用国内生长的有机晶体DAST作为THz源的研究

利用时域光谱技术分别测量了通过光整流法在国内新生长的有机晶体DAST和国际常用的高效能THz晶体ZnTe中产生的THz脉冲的时域光谱,也测量和分析了有机晶体DAST在THz波段的色散和吸收特性,并通过热辐射探测计(4.2 K Si-bolometer)测量了THz脉冲的绝对能量。结果表明,国内新生长的有机晶体DAST的确是一种高效率的THz产生晶体,优化生长条件后将可得到更高的产生效率。     

非致冷热成象传感器

详细介绍了室温下（非致冷）工作的热成象用传感器（例如，热释电传感器和半导体电阻测辐射热计传感器）的结构、工作原理、性能水平、制作技术、现状和应用前景。低成本是半导体电阻测辐射热计的特点     

非制冷微测辐射热计热成像

文中在指出现代制冷型红外成像技术的不足,论述非制冷红外成像技术的优点之后,介绍了微测辐射热计阵列的非制冷热成像系统.首先与非制冷热电热像仪进行了比较,指出测辐射热计热成像的优势.然后描写了微测辐射热计阵列的设计,分析了桥式结构热绝缘对响应率提高所起的作用,并讨论了探测器噪声等效温差(NETD)的性能.最后概括地描述了微测辐射热计成像仪的设计.     

μm脉冲电源及其在Z-pinch诊断中的应用

 研制了一种输出连续可调的脉冲恒压电源，该电源电压幅度为0~120V，脉宽为3~14μs，触发延迟时间为0~1μs。将其应用于等离子体辐射的软X射线总能量测量系统中，采用脉冲电源和差值法记录信号，通过分析发，实验中测到的电阻变化与电路中其它电阻无关，是X射线辐射导致镍薄膜电阻的变化引起的。测得的镍薄膜电阻的变化为4.47Ω，以此回推计算得Z-pinch等离子体源辐射的软X射线能量为63.3kJ。     

SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays

Uncooled microbolometer thermal infrared detector technology is presently revolutionizing the infrared technology field. Essential improvement of the cost/performance ratio would be achieved by microbolometer arrays with higher sensitivity, since this allows the use of simpler and less costly camera optics, which implies a lower cost of the complete IR camera. The sensitivity of the microbolometers depends critically on the signal-to-noise ratio of the integrated thermistor material, which is set by its temperature coefficient of resistance (TCR) and noise characteristics.In this work we have investigated the use of epitaxial silicon-germanium/silicon (SiGe/Si) quantum well (QW) structures as a thermistor material. Si_0.68Ge_0.32/Si QW structures typically give a TCR of 3.0%/K and low noise values. A calculation of the noise equivalent temperature NETD of a bolometer gives 25 mK using the following assumptions: f-number = 1, 30 Hz video frame rate for a 640 × 480 array, with a pixel size 25 × 25 μm.Higher TCR values are foreseen for SiGe/Si quantum dot structures, and the noise is expected to be similar to the QW based structures.     

The performance improvement evaluation for SiGe-based IR detectors

During recent years, single crystalline (Sc) SiGe has been recognized as a new low cost thermistor material for IR detection. In this study the effect of Ge content, pixel size and the Ni silicide on the performance of SiGe/Si thermistor material have been presented. The noise level was decreased for more than one order of magnitude when the Ni silicide layer was integrated below the metal contacts. The silicidation slightly improved TCR values for the detectors (+0.22%/K). However, increasing the Ge content had the most significant effect on the TCR. A statistical analysis was applied to evaluate the effect of each parameter. Using the factorial method, it was realized that decreasing the pixel size would enhance the TCR value.     

测辐射热计红外焦平面列阵

非制冷测辐射热计红外焦平面列阵设计为桥式结构,器件制作采用微机械加工技术。工作被段为８￣１２μｍ,热阻达１０＾７Ｋ／Ｗ量级,噪声等效温差为０．１Ｋ。