Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films

In this investigation the composite SiO_x〈Ti〉 films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO₂) and Тi powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiO_x〈Ti〉 layers with resistance (for monopixel of 0.8 × 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to −2.22% K⁻¹. IR spectrum of SiO_x〈Ti〉 film is characterized by a broad absorption band in the range of 8–12 μm which is associated with the Si–O–Si stretching mode.Investigations of the effect of gamma irradiation on SiO_x〈Ti〉 films have shown that their temperature-sensitive properties, in particular TCR does not change up to a dose of 10⁶ Gy.These results suggest that SiO_x〈Ti〉 films can be used as materials for production of radiation-resistant thermosensitive detectors operated in radiation fields of γ-radiation and combining functions of IR-absorption and formation of an electric signal.     

Noise behavior of amorphous GexSi1−xOy for microbolometer applications

High resistivity sputtered a-Ge_xSi_1−xO_y compound was investigated for application to microbolometer fabrication for thermal imaging. Noise behavior of the fabricated bolometers was measured, showing no evidence of random telegraph switching (RTS) noise. 1/f noise was measured at several measuring currents, resulting in a 1/f noise factor of 2.9 × 10⁻¹¹ that can be used for further design and modeling.     

Device-level vacuum packaged uncooled microbolometer on a polyimide substrate

Uncooled infrared detectors (IR) on a polyimide substrate have been demonstrated where amorphous silicon (a-Si) was used as the thermometer material. New concepts in uncooled microbolometers were implemented during the design and fabrication, such as the integration of a germanium long-pass optical filter with the device-level vacuum package and a double layer absorber structure. Polyimide was used for this preliminary work towards vacuum-packaged flexible microbolometers. The detectors were fabricated utilizing a carrier wafer and low adhesion strength release layer to hold the flexible polyimide substrate during fabrication in order to increase the release yield. The IR detectors showed a maximum detectivity of 4.54 × 10⁶ cm Hz^1/2/W at a 4 Hz chopper frequency and a minimum noise equivalent power (NEP) of 7.72 × 10⁻¹⁰ W/Hz^1/2 at a biasing power of 5.71 pW measured over the infrared wavelength range of 8–14 μm for a 35 μm × 35 μm detector. These values are comparable to other flexible microbolometers with device-level vacuum packaging which are found in literature.     

HL-2M 等离子体辐射量热计系统的研制

HL-2M 装置辐射量热计系统采用 16 通道光电二极管阵列作为探测器,11 个探测器阵列,共有 176 个探测通道,被设计在同一个小截面内,交叉覆盖上下偏滤器、等离子体边缘和等离子体芯部区域。数值模拟结 果显示,根据这种视线布局能够精确地估算出等离子体的总辐射功率;运用相关层析反演方法能够重建出等离子 体辐射功率密度的分布特征。在 HL-2M 初始等离子体放电中,根据中平面的探测器阵列对等离子体辐射特征进 行了初步的实验分析。     

一种用于探测太赫兹信号的测辐射热仪

基于Nb5N6薄膜在室温下具有高达-0.7％ K-1的电阻温度系数,用Nb5N6薄膜结合平面蝴蝶结天线制备了一种可在室温下进行100 GHz信号探测的测辐射热仪.该器件在偏置电流为0.4 mA的条件下,达到的最佳电压响应为-400 V/W,调制频率为200 Hz时等效噪声功率达到1.5 ×10-11 w/(√Hz),调制频率10 kHz以上时等效噪声功率优于9.5×10-12W/(√Hz).     

1×8线阵高温超导远红外热型探测器研制

采用高质量的 YBCO 高温超导薄膜,研制成1×8线阵超导远红外热型探测器。测量了线阵中各单元器件的性能,结果表明:NEP 在10~(-11)WHz~(-1/2),D~*在10~8m·Hz~(1/2)·W~(-1)的范围内。     

YBCO薄膜红外探测器研究的新进展

用ＹＢＣＯ／ＬａＡｌＯ＿３薄膜制成的１ｍｍ红外探测器，经技术保护之后，寿命已达３年。其Ｄ（５００，１０，１）＝３．７×１０￣９ｃｍＨｚ￣（１／２）Ｗ￣（－１），ＮＥＰ（５００，１０，１）＝２．４×１０￣（－１１）ＷＨｚ￣（－１／２）；超导微桥（５０μｍ×１０μｍ）红外探测器，其Ｄ（５００，１０，１）＝１×１０￣９ｃｍＨｚ￣（１／２）Ｗ￣（－１），ＮＥＰ（５００，１０，１）＝２．３×１０￣（－１２）ＷＨｚ￣（－１／２）。     

Modelled V-I Performance of A 3HE Composite Bolometer Detector

The V-I characteristics of a ³He-cooled, composite bolometer detector designed for submillimetre astronomy are modelled. The modelling yields detector parameters that cannot be measured directly. The system NEP predicted from theoretical V-I equations is found to agree with the measured noise values. The calculated dynamic thermal conductance and the electrical responsivity are found to deviate from the standard model at low temperatures.     

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对HL-2A装置限制器位形和偏滤器位形下放电气体分别为氘和氦时的等离子体热辐射测量结果做了初步分析,分析结果表明：在偏滤器室注入惰性气体能够有效的降低到达靶板的热辐射;超声分子束注入时,观测到注入粒子在等离子体中输运过程;氦放电时的辐射比值明显高于氘放电时的比值;真空室器壁的处理能够有效地降低辐射损失,硅化对器壁条件的改善效果明显。