关于LTE智能天线波束赋型对覆盖增强的研究

在LTE覆盖能力上,外场覆盖的D/F频段覆盖能力弱是一直以来都存在的问题,最集中体现视距和非视距传播能力差异较大。文章主要基于智能天线波束赋型分析,并利用天线权值、天线厂家给与的天线权值赋值标准,结合无线优化关键性能指标,关联分析研究天线权值波束赋型能够给网络覆盖率带来的提升。     

Superposition Effect of Passive Intermodulation for Cable Assemblies with Discrete Point-Sources

In order to expand the cell coverage of wireless cellular systems, the number of passive components in wireless systems has been substantially increased. There can be many passive intermodulation(PIM) pointsources even in a device or a radio link, which may add up constructively or destructively. A modified point-source model with lossy components is proposed to evaluate the superposition effect of the forward and refl ected PIM in case of series connection. The index of the series connection factor(SCF) is employed for systems that incorporate multiple PIM sources to predict the important characteristics of the cumulative PIM, such as the maximum and minimum values and the limit form. Furthermore, some initial experimental results are given out and the deviation in the above-mentioned prediction is also analyzed.     

An Anonymous Authentication Scheme for Plugin Electric Vehicles Joining to Charging/Discharging Station in Vehicle-to-Grid(V2G) Networks

Incorporating electric vehicles into smart grid,vehicle-to-Grid(V2G) makes it feasible to charge for large-scale electric vehicles,and in turn support electric vehicles,as mobile and distributed storage units,to discharge to smart grid.In order to provide reliable and efficient services,the operator of V2 G networks needs to monitor realtime status of every plug-in electric vehicle(PEV) and then evaluate current electricity storage capability.Anonymity,aggregation and dynamic management are three basic but crucial characteristics of which the services of V2 G networks should be.However,few of existing authentication schemes for V2 G networks could satisfy them simultaneously.In this paper,we propose a secure and efficient authentication scheme with privacy-preserving for V2 G networks.The scheme makes the charging/discharging station authenticate PEVs anonymously and manage them dynamically.Moreover,the monitoring data collected by the charging/discharging station could be sent to a local aggregator(LAG)in batch mode.In particular,time overheads during verification stage are independent with the number of involved PEVs,and there is no need to update the membership certificate and key pair before PEV logs out.     

复合谐振型双向全桥DC/DC变换器

针对传统的谐振型双向全桥DC/DC变换器在能量反向推送时开关管的电流应力激增的缺点,提出了一种新型的LCL复合谐振型双向全桥DC/DC变换器,保证了能量正反向推送时开关管的电流应力均保持较低水平。阐述了谐振变换器的工作原理,建立了变换器的交流阻抗模型,在此基础上给出了变换器的参数设计方法,并通过能量注入及自由振荡控制策略实现了变换器的输出控制。通过实验结果验证了该控制策略的可行性。     

基于蓝宝石纳米图形衬底上氮化镓生长的研究

利用两步生长法在蓝宝石纳米图形衬底（NPSS）上生长得到高质量的氮化镓薄膜。通过XRD和SEM对薄膜质量的表征和研究发现,为得到高质量的氮化镓（GaN）薄膜,在NPSS上生长时得到的最优缓冲层厚度为15nm,而在微米级尺寸的图形衬底（MPSS）上得到的最优缓冲层厚度远大于15nm。同时,在NPSS上生长氮化镓薄膜的过程中观察到一个有趣的现象,即GaN在NPSS上生长的初始阶段,氮化镓晶粒主要在图形之间的平面区域生长,极少量的GaN在衬底图形的侧面上聚集生长。这一有趣的现象明显不同于GaN在MPSS上的生长过程。接着,又在NPSS上生长了GaN基LED结构,并对其光电性能进行了研究。     

LTE turbo 解码器设计

本文提出一种可以用于lte小基站的turbo码解码器设计, 它支持LTE标准中的188种不同长度的TURBO码解码。设计采用了最多16路的并行解码,迭代次数可设定。解码器提采用了一种改进的软输入软输出设计。设计采用了轮流计算前向状态矩阵,和后项状态矩阵。这样可以缩短基二算法的关键路径,同时分支传输概率也可以直接用于计算不再需要保存。分组数据利用列地址映射,和行数据交换完成整个码的交织计算,利用相反的过程完成解交织计算。每个时钟都可以产生交织与解交织数据,用于解码和存储运算。     

AlGaN/GaN HEMT场板结构对与表面态相关的延迟特性的影响

为了研究AlGaN/GaN HEMT器件中场板结构对电流崩塌效应影响的物理机理,我们运用数值模拟的方法研究了场板结构和与表面态相关的栅延迟现象之间的关系。模拟显示场板结构可以显著地抑制电流崩塌效应的强度,但是对延迟时间没有影响。场板结构可以增大AlGaN表面附近的空穴积累,导致表面态的离化率增大从而抑制器件的电流崩塌。     

A 3.16–7 GHz transformer-based dual-band CMOS VCO

A dual-band, wide tuning range voltage-controlled oscillator that uses transformer-based fourth-order(LC) resonator with a compact common-centric layout is presented. Compared with the traditional wide band(VCO), it can double frequency tuning range without degrading phase noise performance. The relationship between the coupling coefficient of the transformer, selection of frequency bands, and the quality factor at each band is investigated. The transformer used in the resonator is a circular asymmetric concentric topology. Compared with conventional octagon spirals, the proposed circular asymmetric concentric transformer results in a higher qualityfactor, and hence a lower oscillator phase noise. The VCO is designed and fabricated in a 0.18- m CMOS technology and has 75% wide tuning range of 3.16–7.01 GHz. Depending on the oscillation frequency, the VCO current consumption is adjusted from 4.9 to 6.3 m A. The measured phase noises at 1 MHz offset from carrier frequencies of 3.1, 4.5, 5.1, and 6.6 GHz are –122.5, –113.3, –110.1, and –116.8 d Bc/Hz, respectively. The chip area, including the pads, is 1.20.62 mm2 and the supply voltage is 1.8 V.     

一种对三维芯片中硅通孔进行完整建模与寄生参数提取的有效方法

针对三维芯片中硅通孔（through-silicon via, TSV）的准确电学建模问题,本文提出了一种电阻电容（RC）电路模型以及相应的有效参数提取技术。该电路模型同时考虑了半导体效应与静电场影响,适合于低频与中频的电路信号范围。该方法采用一种基于悬浮随机行走（floating random walk, FRW）算法的静电场电容提取技术,然后将它与刻画半导体效应的MOS电容结合,形成等效电路模型。与Synopsys公司软件Sdevice所采用的对静电场/半导体效应进行完整仿真的方法相比,本文方法计算效率更高,并且也能处理一般的TSV电路版图。对多个含TSV的结构进行了计算实验,结果验证了本文方法在从10KHz到1GHz频率范围内的建模准确性,也显示出它相比Sdevice方法最多有47倍的加速比。     

The impact of gate misalignment on the analog performance of a dual-material double gate junctionless transistor

The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain side. The analog performance parameters analyzed are: transconductance, output conductance, intrinsic gain and cut-off frequency. These figures of merits (FOMs) are compared with a dual material double gate inversion mode transistor under same gate misalignment condition. The impacts of different length of control gate (L₁) for a given gate length (L) are also studied and the optimum lengths L₁ under misalignment condition to have better analog FOMs and high tolerance to misalignment are presented.