光突发交换网络中最长队列优先调度组装机制

提出了光突发交换网络中的最长队列优先调度（LQF-SA）机制,将边缘节点的突发组装和突发调度两种技术紧密结合在一起.在现实网络中,业务通常是非均匀分布的,即在某些源宿对之间存在更大的业务流量.仿真结果表明,LQF-SA机制可以很好地完成非均匀分布业务流的组装.即使在均匀分布业务流输入下,LQF-SA机制在突发大小分布、组装效率和突发丢失率等方面也优于已提出的轮询调度组装（RR-SA）机制.     

机械磨抛对CdZnTe薄膜阻变特性的影响

采用磁控溅射法在ITO玻璃上制备了CdZnTe薄膜,探究机械磨抛对CdZnTe薄膜阻变特性的影响。通过对XRD图谱、Raman光谱、AFM显微照片等实验结果分析阐明了机械磨抛影响CdZnTe薄膜阻变特性的物理机制。研究结果表明,磁控溅射制备的薄膜为闪锌矿结构,F43m空间群。机械磨抛提高了CdZnTe薄膜的结晶质量;CdZnTe薄膜粗糙度(Ra)由磨抛前的3.42 nm下降至磨抛后的1.73 nm;磨抛后CdZnTe薄膜透过率和162 cm^-1处的类CdTe声子峰振动峰增强;CdZnTe薄膜的阻变开关比由磨抛前的1.2增加到磨抛后的4.9。机械磨抛提高CdZnTe薄膜质量及阻变特性的原因可能是CdZnTe薄膜在磨抛过程中发生了再结晶。     

基于遗传算法的TSP问题求解与仿真

TSP问题常用的自然编码方式在进行遗传操作时,会产生不合法路径.设计了一种新的编码方式,能有效避免这一问题,遗传操作简单易行,无需对不合理的基因片段进行合法化修正.在求解过程中,为了解决遗传算法的收敛速度和全局收敛性之间的矛盾、避免早熟,运用了Doping策略和参数切换方法.最后进行了仿真测试.结果表明,该算法能迅速淘汰劣解,具有较快的收敛速度;能有效遏制早熟,对不同规模的TSP问题能有效求得最优解.     

光纤耦合器及其应用

光纤耦合器是一种定向耦合器,是光纤通信系统中重要器件之一．虽然目前光纤耦合器的大部分应用还只涉及到它的线性特性,但是耦合器中的非线性效应自1982年起就开始研究,其中一个重要应用是全光开关．介绍了光纤耦合器的基本结构及工作原理,重点对光纤耦合器进行了线性与非线性理论分析,具体介绍了几种光纤耦合器的应用实例．     

OBS网络中的最小间隙组调度算法

根据OBS网络的结构和特点,分析了OBS网络核心节点的数据信道调度算法,提出了一种新的数据信道调度算法--最小间隙组调度(SGGS)算法,并详细讨论了该算法的具体实现.该算法将到达核心节点的控制包分组,然后将这一组控制包按数据包到达先后的次序调度数据信道,从而达到合理调度和使用数据信道,最终实现改善整个OBS网络性能的目的.     

波分交叉连接结构的一种简单评估方法

提出了一种评估各种波分交叉连接（WXC）结构的简单分析方法,定性讨论了几种常用WXC结构在阻塞、模块性、广播发送能力和扩展能力的特性。利用线性方程组建立数学模型,并对几种常见WXC方案做出了定量分析插入损耗、硬件成本和灵活性的比较结果。对比几种实现方案得出,基于解复用／空间光开关矩阵／复用的WXC结构（DSM）具有最小的传输损耗,且其成本和灵活性均表现较好。     

Electrical switching effect in a photochromic molecule between two graphene electrodes

We propose a single-molecule electrical switches consisting of a photochromic dimethyldihydropyrene/cyclophanediene molecule sandwiched between two graphene electrodes and investigate the electronic transport by using density-functional theory and nonequilibrium Green's function methods. The “open” and “closed” isomers of the photochromic molecule are shown to have electrical switching behavior and negative differential resistance effect. Moreover, it is also found that the switching ratio between two different conductive states depends on the ambient temperature, and the device behaves as a stable electrical switch around room temperature, which is in agreement with a recent experimental study of another photochromic molecule diarylethene reported by Jia et al. (2016) [17].     

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Based on the bipolar resistive switching (RS) characteristics of SnO₂ films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO₂/fluorine-doped tin oxide (FTO). The SnO₂ microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO₂ and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.     

Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs

The gate induced drain leakage (GIDL) effect in negative capacitance (NC) FinFET is investigated. A Landau–Ginzburg–Devonshire equation (which considers the polarization gradient in ferroelectric material) is used to estimate the characteristics of the NC FinFET. Specifically, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) and metal-ferroelectric-insulator-semiconductor (MFIS) NC FinFETs are compared, in order to figure out the effect of the internal metal layer on the GIDL effect. To analyze the impact of the polarization gradient on the GIDL effect in NC FinFET, a polarization gradient coefficient is varied. For MFMIS, the polarization gradient doesn't significantly affect the device performance. The subthreshold swing improves but the GIDL effect deteriorates because of the “uniform” NC effect in channel region. For MFIS, the device performance is explicitly affected by the polarization gradient. Smaller polarization gradients result in non-uniform NC effect in channel region, resulting in severe GIDL effects. On the other hand, higher polarization gradients alleviate GIDL effects.     

某发射机调制器的改进设计

本文介绍某型号发射机调制器与高压电源单元在抗打火及维修性方面的改进设计.