Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device

We compare the current density–voltage (J–V) and magnetoconductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) device (Au/P3HT(350 nm)/Al) before and after annealing above the glass transition temperature of 150 °C under vacuum. There is a decrease of more than 3 orders of magnitude in current density due to an increase of the charge injection barriers after de-doping through annealing. An increase, approaching 1 order of magnitude, in the negative MC response after annealing can be explained by a shift in the Fermi level due to de-doping, according to the bipolaron mechanism. We successfully tune the charge injection barrier through re-doping by photo-oxidation. This leads to the charge injection and transport transitioning from unipolar to ambipolar, as the bias increases, and we model the MC response using a combination of bipolaron and triplet-polaron interaction mechanisms.     

基于DIS数字信息化系统对透光物质透光性能的研究

采用DIS数字信息化系统,对不同浓度的蓝墨水溶液在激光光源照射下的透射平均照度及照度分布图像进行实验研究,得到了平均照度值随溶液浓度变化的规律。对不同颜色塑料膜片对白炽灯光源透过照度值及照度分布图像进行实验研究得到及其相关之规律。     

3GPP关于3G演进（LTE）的工作情况

随着新技术的不断出现以及移动通信理念的变革,为了把握新一轮的技术浪潮,保持在移动通信领域的领导地位,2004年底3GPP启动了关于3G演进型系统,即LTE的研究与标准化工作,并且计划在2007年发布第一个版本的系统规范。目前,该项目已经进行了将近一年的时间,各个方面的研究都取得了一定的进展。本文简要介绍了该项目的背景情况,目前的进展和相关的趋势。     

Handover and Uplink Power Control Performance in the 3.84 Mcps TDD mode of UTRA Network

In this article we consider the performance of the 3.84 Mcpstime-division duplex (TDD) mode of UTRA (Universal TerrestrialRadio Access) network. We emphasize two of the radio resourcemanagement algorithms, handover and uplink power control, whoserole in the overall system performance is studied extensively.First, a handover algorithm used in WCDMA (Wideband Code DivisionMultiple Access) standard is considered in a TDD-mode operation.This gives rise to a careful setting of different handoverparameters, and the evaluation of the effects to the systemperformance. Secondly, the specified uplink power controlalgorithm is considered. Since it is based on several user-mademeasurements which may involve both random and systematic errors acareful study about the suitability of the power control scheme iscarried out.     

3G标准的技术性比较分析与研究

介绍了3G技术在国内外的发展情况，阐述了发展趋势，对3G技术的分类和所采用的主流技术、标准化情况进行了论述，并对CDMA2000，WCDMA和TD-SCDMA三种3G的三大主流应用技术标准进行比较分析。     

本地传输网优化思路

首先介绍了本地传输网所承载的业务,然后介绍了本地传输网的现状,接着概括总结了本地传输网目前存在的问题,最后提出了调整和优化思路。     

如何构建面向3G时代的业务支撑系统

业务支撑系统作为3G运营的重要组成，它的建设情况直接决定了电信运营商今后3G运营的成败，文章简单介绍了如何构建面向3G时代的业务支撑系统，对建设今后的业务支撑系统提供建议。     

从PZT体系看无铅压电陶瓷的可能应用

总结了主要以(Bi0.5Na0.5)TiO3和NaNbO3为基的无铅压电陶瓷的性能，以Pb(Ti，Zr)TiO3基二元系、三元系压电陶瓷的性能与应用为参考，分析了无铅压电陶瓷可能的器件应用。此外，还对拓宽无铅压电陶瓷应用需要改进的性能提出了建议。