与5V CMOS标准工艺兼容的20V N-CDMOS器件研究

文章主要介绍了在0．5μm5VCMOS标准制造工艺的基础上,不改变其工艺制造流程及其掺杂浓度,借助Synopsys模拟软件详细分析讨论了高压N—CDMOS器件的漂移区长度、沟道长度与击穿电压之间的关系,通过对各参数的模拟和实验设计,最终获得20V高压N—CDMOS最优化的器件结构与工艺参数。其制造工艺与现有5V低压工艺完全兼容,工艺简单、集成度高,可广泛应用于功率器件的芯片上。     

A super-junction SOI-LDMOS with low resistance electron channel

A novel super-junction LDMOS with low resistance channel(LRC), named LRC-LDMOS based on the silicon-oninsulator(SOI) technology is proposed. The LRC is highly doped on the surface of the drift region, which can significantly reduce the specific on resistance(Ron,sp) in forward conduction. The charge compensation between the LRC, N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance, which can completely deplete the whole drift,thus the breakdown voltage(BV) is enhanced in reverse blocking. The three-dimensional(3 D) simulation results show that the BV and R_(on,sp) of the device can reach 253 V and 15.5 mΩ·cm~2, respectively, and the Baliga's figure of merit(FOM = BV~2/R_(on,sp)) of 4.1 MW/cm~2 is achieved, breaking through the silicon limit.     

Synthesis,Crystal Structure,and Characterization of Na7Cu4(AsO4)5

Abstract

Sodium copper (II) arsenate Na₇Cu₄(AsO₄)₅ has been grown by conventional high-temperature, solid-state methods in molten-salt media. It was characterized by single crystal X-ray diffraction (XRD), thermal analysis (DTA–TGA), scanning electron microscopy (SEM), semiquantitative energy dispersive spectroscopy analysis (EDS), and vibrational spectroscopy. Na₇Cu₄(AsO₄)₅ exhibits a three-dimensional framework built up of CuO₅, CuO₄, and AsO₄ polyhedra, with intersecting channels in which the Na⁺ cations are located. The three-dimensional cohesion of the framework results from Cu–O–As bridges. CuO₅ and CuO₄ polyhedra are elongated due to the Jahn–Teller effect, whereas AsO₄ tetrahedra are almost regular. This new structural model is validated by the charge distribution (CD) analysis. The infrared and Raman spectra confirmed the presence of AsO₄ tetrahedra.

[Supplementary materials are available for this article. Go to the publisher's online edition of Phosphorus, Sulfer, and Silicon and the Related Elements for the following free supplemental files: Additional tables and figures.]     

BV estimates of Lax-Friedrichs' scheme for a class of nonlinear hyperbolic conservation laws

We give uniform BV estimates and -stability of Lax-Friedrichs' scheme for a class of systems of strictly hyperbolic conservation laws whose integral curves of the eigenvector fields are straight lines, i.e., Temple class, under the assumption of small total variation. This implies that the approximate solutions generated via the Lax-Friedrichs' scheme converge to the solution given by the method of vanishing viscosity or the Godunov scheme, and then the Glimm scheme or the wave front tracking method.

     

MOCVD法制备Cu掺杂ZnO薄膜

通过金属有机物化学气相沉积(MOCVD)设备,在c-Al2 03衬底上生长本征和Cu掺杂ZnO( ZnO∶ Cu)薄膜.X射线衍射(XRD)谱观察到未掺杂的ZnO和ZnO∶ Cu样品都呈现出较好的c轴择优取向生长.X射线光电子能谱(XPS)表明Cu已掺入到ZnO薄膜中.利用光致发光(PL)测试对本征ZnO和ZnO∶ C...     

Analysis of the bond‐valence method for calculating 29Si and 31P magnetic shielding in covalent network solids

²⁹Si and ³¹P magnetic‐shielding tensors in covalent network solids have been evaluated using periodic and cluster‐based calculations. The cluster‐based computational methodology employs pseudoatoms to reduce the net charge (resulting from missing co‐ordination on the terminal atoms) through valence modification of terminal atoms using bond‐valence theory (VMTA/BV). The magnetic‐shielding tensors computed with the VMTA/BV method are compared to magnetic‐shielding tensors determined with the periodic GIPAW approach. The cluster‐based all‐electron calculations agree with experiment better than the GIPAW calculations, particularly for predicting absolute magnetic shielding and for predicting chemical shifts. The performance of the DFT functionals CA‐PZ, PW91, PBE, rPBE, PBEsol, WC, and PBE0 are assessed for the prediction of ²⁹Si and ³¹P magnetic‐shielding constants. Calculations using the hybrid functional PBE0, in combination with the VMTA/BV approach, result in excellent agreement with experiment. © 2016 Wiley Periodicals, Inc.     

Synthesis and Anti-Neuroinflammatory Activity of 1,7-diphenyl-1,4-heptadien-3-ones in LPS-Stimulated BV2 Microglia Via Inhibiting NF-κB/MAPK Signaling Pathways

A series of 1,7-diphenyl-1,4-heptadien-3-ones with various substituents (HO-, CH₃O-, CH₃-, Cl-) on the phenyl rings were synthesized and evaluated for anti-neuroinflammatory effects in LPS-stimulated BV2 microglia. The pharmacological results showed that the target compounds bearing methoxy groups greatly inhibited LPS-induced NO release, and that the active compounds CU-19 and CU-21 reduced the level of NO, TNF-α, IL-6 and PGE-2, downregulated the expression of COX-2 and iNOS in LPS-stimulated BV2 cells. A study of the mechanism of action revealed that CU-19 and CU-21 inhibited the nuclear translocation of NF-κB and phosphorylation of MAPKs (ERK, JNK, and p38). A preliminary pharmacokinetic study in rats revealed that the pharmacokinetic properties of CU-19 and CU-21 were dramatically ameliorated in comparison with the pharmacokinetic properties of curcumin.     

基片及其上方回转椭球粒子极化光散射

基于BV理论建立基片及其上方回转椭球粒子的复合散射模型,通过矢量球谐函数展开,对散射过程进行了分析,对散射场及微分散射截面详细求解,并给出了数值计算结果,与离散源方法做了比较,同时退化为球粒子与扩展Mie理论做了比较,说明了此方法的有效性。并详细讨论分析了微分散射截面随不同入射角,散射角,回转椭球粒子的尺寸、长短轴比例,距基片的距离,介电常数,粒子取向角的变化关系。结果表明:同一散射角下入射角越大,其微分散射截面越大;粒子尺寸越大,相互作用越大,其微分散射截面越大;长短轴比例越大,其微分散射截面越小;距离基片的距离越大,微分散射截面越大;微分散射截面的变化主要依赖于相对介电常数实部、虚部数值较大的一方,并且随粒子取向角的增大而增大。