深亚微米同步辐射x射线光刻模拟

用束衍生法研究了深亚微米同步辐射 x射线光刻中掩模吸收体的光导波效应 ,并对 x射线光刻后的光刻胶剖面进行了理论计算。采用面向对象技术 ,研制了一个取名为 XLLS1 .0的模拟软件。本文对这个软件进行了详细介绍     

Exposure Simulation Model for Chemically Amplified Resists

In this study, after Dill’s model is discussed for transmittance and refractive indices of the non-chemically amplified resists, G- and I-line novolak resists, and the chemically amplified resists, a modification of Dill’s model as a new exposure model is introduced. The simulation results obtained using this new model with the multi-thin film interface method and the Berning theory have shown a good matching to the experimental data. Also, the simulated transmittance change due to the exposure parameters are used to analyze the influence of the coefficients on the transmittance.     

Submicron External Electro-optic Measuring System Based on an Electro-optic Solid Immersion Lens

In this paper, all electro-optic solid immersion lens (EOSIL) is introduced, which is made of GaAs. A reflecting external electro-optic measuring system based on the EOSIL is built. With a hemispherical GaAs EOSIL used as the external probe, 0.7 µm spot size is obtained when the wavelength of the probing beam from a laser diode is 1.3 µm and a microscope objective with 0.3 numerical aperture is used. The principle of the measuring system is analyzed by Jones matrix. By using the system, the electrical signals propagating on a microstrip transmission line are successfully measured. The voltage sensitivity about 5 mV/ is measured when 10 kHz sinusoidal electric signal is applied on the microstrip line.     

45nm工艺与关键技术

介绍了45 nm芯片所采用的关键工艺技术:193 nm ArF干法/浸没式光刻技术、低k电介质技术、高k电介质技术和应变硅技术等。英特尔45 nm全功能153 MB SRAM芯片与65 nm芯片相比,晶体管密度提高了2倍,晶体管开关速度提高20%以上,晶体管漏电流降低到65 nm芯片的1/5,存储单元面积为0.346μm2。指出英特尔45 nm芯片MPU将在2007年下半年实现量产,并且继英特尔之后,TI、IBM、特许、英飞凌、三星、台积电和台联电等均已推出了45 nm芯片,说明45 nm芯片技术正在日益走向成熟。     

PCB技术的革新与进步

文章概述了近几年来在PCB工业中生产技术的革新与进步情况,特别是直流电镀(镀层均匀性、填孔镀等)、表面涂(镀)覆(化学镀镍/钯浸金和直接浸金等)技术的革新与进步,推动了PCB工艺技术的发展。     

高频ECR离子源的最新进展

As they are first optimized for their ion losses,ECRISs are always under a fundamental compromise: having high losses and strong confinement at the same time.To help ECR ion source developers in the design or improvement of existing machines,general comments are presented in a review article being soon published. In this 160 pages contribution,fundamental aspects of ECRISs are presented,with a discussion of electron temperature and confinement and ion confinement.Then,as microwaves play a key role in these machines, a chapter presents major guidelines for microwave launching and coupling to ECR plasma.Moreover,once ECR plasma is created,understanding this plasma is important in ion sourcery;and a section is dedicated to plasma diagnostics with an emphasis on the determination of electron and ion density and temperature by vacuum ultraviolet(VUV)spectroscopy.Another chapter deals with the role of magnetic confinement and presents updated scaling laws.Next chapter presents different types of ECRISs designed according to the main parameters previously described.Finally,some industrial applications of ECRISs and ECR plasmas in general are presented like ion implantation and photon lithography.Some hints taken from this review article are presented in the following article.     

Low‐Operating‐Voltage Organic Transistors Made of Bifunctional Self‐Assembled Monolayers

Self‐assembled monolayers (SAMs) are molecular assemblies that spontaneously form on an appropriate substrate dipped into a solution of an active surfactant in an organic solvent. Organic field‐effect transistors are described, built on an SAM made of bifunctional molecules comprising a short alkyl chain linked to an oligothiophene moiety that acts as the active semiconductor. The SAM is deposited on a thin oxide layer (alumina or silica) that serves as a gate insulator. Platinum–titanium source and drain electrodes (either top‐ or bottom‐contact configuration) are patterned by using electron‐beam (e‐beam) lithography, with a channel length ranging between 20 and 1000 nm. In most cases, ill‐defined current–voltage (I–V) curves are recorded, attributed to a poor electrical contact between platinum and the oligothiophene moiety. However, a few devices offer well‐defined curves with a clear saturation, thus allowing an estimation of the mobility: 0.0035 cm² V^–1 s^–1 for quaterthiophene and 8 × 10^–4 cm² V^–1 s^–1 for terthiophene. In the first case, the on–off ratio reaches 1800 at a gate voltage of –2 V. Interestingly, the device operates at room temperature and very low bias, which may open the way to applications where low consumption is required.     

Chemical Amplification of a Triphenylene Molecular Electron Beam Resist

Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation to date has been poor sensitivity. A new triphenylene derivative molecular resist, with pendant epoxy groups to aid chemically amplified crosslinking, was synthesized and characterized. The sensitivity of the negative tone, pure triphenylene derivative when exposed to an electron beam with energy 20 keV was ～ 6 × 10^–4 C cm^–2, which increased substantially to ～ 1.5 × 10^–5 C cm^–2 after chemical amplification (CA) using a cationic photoinitiator. This was further improved, by the addition of a second triphenylene derivative, to ～ 7 × 10^–6 C cm^–2. The chemically amplified resist demonstrated a high etch durability comparable with the novolac resist SAL 601. Patterns with a minimum feature size of ～ 40 nm were realized in the resist with a 30 keV electron beam.