Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.     

二极管端泵浦连续激光器激活介质长度与透过率的优化

从准三能级系统的速率方程出发,推导出了二极管(LD)端泵浦连续工作端面泵浦固体激光器的速率方程,提出了计算连续LD端面泵浦激光器输出功率的方法,并表示成激活介质长度和透过率的函数,由此得到在泵浦功率一定情况时的优化设计步骤。数值计算结果与我们的实验结果和文献[3],[4]的实验数据符合甚好。     

二极管激光侧泵浦单横模100Hz电光调Q激光器

介绍了二极管激光侧泵浦单横模１００Ｈｚ电光调Ｑ激光器的实验结果。泵浦源为一个线阵准连续１００Ｗ二极管激光器，激光工作介质为ＮｄＹＡＧ薄梯形板条，板条与泵浦源间用柱透镜耦合，ＫＤ＊Ｐ电光晶体调Ｑ。在１００Ｈｚ重复频率下，获得单脉冲能量２．３７ｍＪ，脉宽小于７ｎｓ，光束质量因子Ｍ２＝１．１的１．０６μｍ激光，光－光效率为８．５％，斜效率为１８．７％。     

激光二极管自混合干涉和微振动的实验观测

介绍了利用LabView软件虚拟示波器和信号源,对激光二极管自混合干涉和微振动进行的实验观测.该实验可以作为本科低年级学生的综合设计实验.     

用于泵浦固体激光器的激光二极管线阵的输出特性

从实验上测量了激光二极管线阵的输出特性,研究了温度、电流对输出功率、光谱特性,以及偏振特性的影响,为设计全固态激光器提供有益的参考。     

红外半导体激光光镊的实验研究

激光光镊技术是一项在许多科学领域有广阔应用前景的技术。本文详细给出构建一台红外半导体激光光镊的设计思想及实例。由于采用了独特的对大功率多模红外激光选模整形和双透镜陷阱操纵技术等性能价格最优化选择 ,该系统易于构建 ,陷阱操作方便 ,其构建价格仅一般光镊的几十分之一 ,非常适合光镊技术的推广和一般实验室构建     

Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

In this paper we outline the use of resonant-cavity enhancement for increasing the exterior coupling efficiency of photodetectors and light-emitting diodes (LEDs) in the mid-infrared (MIR) spectral region. This method is potentially very important in the MIR because encapsulation is not presently feasible due to the lack of suitable materials. Among other potential applications, resonant-cavity-enhanced (RCE) photodetectors and LEDs could be particularly suitable for greenhouse gas detection because of their ‘pre-tunable’ spectrally narrowed resonantly enhanced peaks. We also present the optical characterization of an InAs RCE photodetector aimed at the detection of methane gas (λ≈3.3 μm), and an InAs/InAs_0.91Sb_0.09 resonant-cavity LED (RCLED) aimed at carbon dioxide gas (λ≈4.2 μm). The high peak responsivity of the RCE photodetector was 34.7 A/W at λ=3.14 μm, and the RCLED peaked at λ=3.96 μm. These are among the longest operating wavelengths for III–V RCE photodetectors and RCLEDs reported in the literature.     

1.30μmDFB激光器组件的设计和制做及其工作原理

本文自行设计和制作了１．３０μｍＤＦＢ激光器组件的讨论了光隔离和光耦合原理。由于采用的激光器－光隔离器－光纤的一体化结构，大大增加了该组件的可用性。在实验中得到高达５５％的耦合效率。     

ICTS measurements for p-GaN Schottky contacts

High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions. This indicates that the defects were located in the vicinity of the interface. The change of the peak height and position of the ICTS curves under various bias conditions were qualitatively interpreted by the distribution of the defects and the current flow effect.     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。