高温(T=80℃)连续激射的2μm InGaSb/AlGaAsSb量子阱激光器

研制了激射波长为2μm的InGaSb/AlGaAsSb应变量子阱激光器。室温连续工作时,电流为1.2A时,出光功率为82.2mW。激光器连续工作温度可高达80℃,出光功率为63.7mW。     

High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser

An InGaSb/AlGaAsSb compressively strained quantum well laser emitting at 2 μm has been fabricated. An output power of 82.2 mW was obtained in continuous wave (CW) mode at room temperature. The laser can operate at high temperature (T=80℃), with a maximum output power of 63.7 mW in CW mode.     

Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10¹⁸ cm^-3 and the resistivity is 5.295×10^-3Ω·cm.     

Molecular beam epitaxy and characterization of Al x Ga1-x As y Sb1-y (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates

We report the molecular beam epitaxial growth of Al _x Ga_1-x As _y Sb_1-y (0.0 ≤ x ≤ 1.0) on undoped, liquid-encapsulated Czochralski, (100) oriented InAs substrates. The degree of lattice mismatch was determined by x-ray diffraction. The lattice matched materials (y ≈ 0.08 + 0.08x) were characterized by low temperature photoluminescence, electro-reflectance, and capacitance-voltage measurements. The experimental bandgap energies agree with earlier experimental results for Al _x Ga_1-x Sb, and also with a self-consistent first principles pseudopotential model. The capacitance-voltage measurements indicate background acceptor concentrations for the unintentionally-doped epitaxial layers of about 2 × 10¹⁵ cm^-3 atx = 1.0 to 5 × 10¹⁶ cm^-3 atx ≈ 0.0.     

采用MBE生长1.6～2.3μm InGaAsSb/AIGaAsSb多量子阱

采用分子束外延生长了不同In组分的InGaAsSb/AlGaAsSb多量子阱材料.X射线衍射发现量子阱材料有多级衍射卫星峰出现,表明量子阱的界面均匀性和质量较好.研究了不同In组分与光致发光波长的关系,光荧光谱测试表明.所制备的不同In组分的InGaAsSb/AlGaAsSb多量子阱材料,在室温下的发光波长可以覆盖1....     

OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers

GaInAsSb and AlGaAsSb alloys have been grown by organometallic vapor phase epitaxy (OMVPE) using all organometallic sources, which include tritertiarybutylaluminum, triethylgallium, trimethylindium, tertiarybutylarsine (TBAs), and trimethylantimony. Excellent control of lattice-matching both alloys to GaSb substrates is achieved with TBAs. GaInAsSb/AlGaAsSb multiple quantum well (MQW) structures grown by OMVPE exhibit strong 4K photoluminescence with full width at half maximum of 10 meV, which is comparable to values reported for quantum well (QW) structures grown by molecular beam epitaxy. Furthermore, we have grown GaInAsSb/AlGaAsSb MQW diode lasers which consist of n- and p-doped Al_0.59Ga_0.41As_0.05Sb_0.95 cladding layers, Al_0.28Ga_0.72As_0.02Sb_0.98 confining layers, and four 15 nm thick Ga_0.87In_0.13As_0.12Sb_0.88 quantum wells with 20 nm thick Al_0.28Ga_0.72As_0.02Sb_0.98 barrier layers. These lasers, emitting at 2.1 μm, have exhibited room-temperature pulsed threshold current densities as low as 1.2 kA/cm².