2μm InGaAsSb/AlGaAsSb应变补偿量子阱结构的数值研究

为了降低2μm半导体激光器的阈值电流并提高器件的输出功率,设计了InGaAsSb/AlGaAsSb应变补偿量子阱结构,并利用SimLastip软件对器件进行了数值模拟.研究表明,在势垒中适当引入张应变可以改善量子阱的能带结构,提高对载流子的限制能力.当条宽为120 μm、腔长为1 000 μm时,采用应变补偿量子阱结构的激光器的阈值电流为91 mA,斜率效率为0.48 W/A.与压应变量子阱激光器相比,器件性能得到明显的改善.     

高温(T=80℃)连续激射的2μm InGaSb/AlGaAsSb量子阱激光器

研制了激射波长为2μm的InGaSb/AlGaAsSb应变量子阱激光器。室温连续工作时,电流为1.2A时,出光功率为82.2mW。激光器连续工作温度可高达80℃,出光功率为63.7mW。     

Molecular beam epitaxy and characterization of Al x Ga1-x As y Sb1-y (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates

We report the molecular beam epitaxial growth of Al _x Ga_1-x As _y Sb_1-y (0.0 ≤ x ≤ 1.0) on undoped, liquid-encapsulated Czochralski, (100) oriented InAs substrates. The degree of lattice mismatch was determined by x-ray diffraction. The lattice matched materials (y ≈ 0.08 + 0.08x) were characterized by low temperature photoluminescence, electro-reflectance, and capacitance-voltage measurements. The experimental bandgap energies agree with earlier experimental results for Al _x Ga_1-x Sb, and also with a self-consistent first principles pseudopotential model. The capacitance-voltage measurements indicate background acceptor concentrations for the unintentionally-doped epitaxial layers of about 2 × 10¹⁵ cm^-3 atx = 1.0 to 5 × 10¹⁶ cm^-3 atx ≈ 0.0.     

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.     

High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser

An InGaSb/AlGaAsSb compressively strained quantum well laser emitting at 2 μm has been fabricated. An output power of 82.2 mW was obtained in continuous wave (CW) mode at room temperature. The laser can operate at high temperature (T=80℃), with a maximum output power of 63.7 mW in CW mode.     

采用MBE生长1.6～2.3μm InGaAsSb/AIGaAsSb多量子阱

采用分子束外延生长了不同In组分的InGaAsSb/AlGaAsSb多量子阱材料.X射线衍射发现量子阱材料有多级衍射卫星峰出现,表明量子阱的界面均匀性和质量较好.研究了不同In组分与光致发光波长的关系,光荧光谱测试表明.所制备的不同In组分的InGaAsSb/AlGaAsSb多量子阱材料,在室温下的发光波长可以覆盖1....     

OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers

GaInAsSb and AlGaAsSb alloys have been grown by organometallic vapor phase epitaxy (OMVPE) using all organometallic sources, which include tritertiarybutylaluminum, triethylgallium, trimethylindium, tertiarybutylarsine (TBAs), and trimethylantimony. Excellent control of lattice-matching both alloys to GaSb substrates is achieved with TBAs. GaInAsSb/AlGaAsSb multiple quantum well (MQW) structures grown by OMVPE exhibit strong 4K photoluminescence with full width at half maximum of 10 meV, which is comparable to values reported for quantum well (QW) structures grown by molecular beam epitaxy. Furthermore, we have grown GaInAsSb/AlGaAsSb MQW diode lasers which consist of n- and p-doped Al_0.59Ga_0.41As_0.05Sb_0.95 cladding layers, Al_0.28Ga_0.72As_0.02Sb_0.98 confining layers, and four 15 nm thick Ga_0.87In_0.13As_0.12Sb_0.88 quantum wells with 20 nm thick Al_0.28Ga_0.72As_0.02Sb_0.98 barrier layers. These lasers, emitting at 2.1 μm, have exhibited room-temperature pulsed threshold current densities as low as 1.2 kA/cm².