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71.
CuX(X=Al, Ga, In)分子的势能函数与稳定性的密度泛函研究 总被引:5,自引:3,他引:2
刘风丽 《原子与分子物理学报》2006,23(5):838-842
根据原子分子反应静力学原理导出了CuX(X=Al,Ga,In) 分子基态电子状态及其离解极限,并在B3LYP/LANL2DZ水平上计算了平衡几何、振动频率和解离能.利用Murrell-Sorbie 函数拟合出了解析势能函数,并计算出光谱参数和力常数.计算结果表明该分子体系是稳定存在的,其稳定性排序为 CuAl>CuGa>CuIn. 相似文献
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由Q-Nd:YAG脉冲激光(波长1.06μm,脉宽10 ns)烧蚀Al靶产生等离子体.观测了在低气压和直流电场条件下的Al等离子体发射光谱.研究了激光功率密度和直流电场对各谱线强度的影响,分析了谱线半高全宽与外加电压,等离子体电子温度与激光能量的变化规律.结果表明,直流电场对铝原子谱线强度有显著的增强,铝原子谱线的半高全宽与直流电场的外加电压基本上呈线性关系. 相似文献
76.
Matthias Heuchel Martin Bhning Ole Hlck Martin R. Siegert Dieter Hofmann 《Journal of Polymer Science.Polymer Physics》2006,44(13):1874-1897
Atomistic packing models have been created, which help to better understand the experimentally observed swelling behavior of glassy polysulfone and poly (ether sulfone), under CO2 gas pressures up to 50 bar at 308 K. The experimental characterization includes the measurement of the time‐dependent volume dilation of the polymer samples after a pressure step and the determination of the corresponding gas concentrations by gravimetric gas‐sorption measurements. The models obtained by force‐field‐based molecular mechanics and molecular dynamics methods allow a detailed atomistic analysis of representative swelling states of polymer/gas systems, with respect to the dilation of the matrix. Also, changes of free volume distribution and backbone mobility are accessible. The behavior of gas molecules in unswollen and swollen polymer matrices is characterized in terms of sorption, diffusion, and plasticization. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1874–1897, 2006 相似文献
77.
Chen-Cheng Sun Shih-Chin Lee Yaw-Shyan Fu Yu-Hwe Lee 《Applied Surface Science》2006,252(23):8295-8300
CrNx thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrNx films at temperatures in the range 20-170 °C. In this study CrNx thin films with CrN, Cr(N), Cr2N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr+2 emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrNx films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrNx film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 °C. This is lower than that of Cr(N), Cr2N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrNx films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness. 相似文献
78.
E. V. Voronina E. P. Yelsukov A. V. Korolyov A. E. Yelsukova 《Hyperfine Interactions》2006,168(1-3):1079-1083
The experimental data from Mössbauer spectroscopy and magnetic measurements are presented as functions of the temperature and external magnetic field for a B2-type ordered Fe 66 Al 34 alloy. 相似文献
79.
This paper develops a mathematical model of the ring-spinning process that takes into account its non-stationary nature. A complex system of differential equations is obtained, which from a mathematical point of view constitutes a ‘free-boundary’ problem. Its solution involves definition of suitable boundary conditions related to the mechanical characteristics of the process and of the spinning machine itself. The boundary conditions which determine the solution are pointed out. A numerical solution of the system of differential equations can be obtained by the Finite-Segments method, as shown in an example. 相似文献
80.
G. Coudenys I. Moeeman G. Vermeire F. Vermaerke Y. Zhu P. Van Daele P. Demeester E. Maayan B. Elsner J. Salzman E. Finkman 《Journal of Electronic Materials》1994,23(2):225-232
The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate
during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of
photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate.
Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials.
Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked
channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor
pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow
mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore,
we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible
for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth. 相似文献