改进的FD—TD法分析二维理想导体TM近区散射问题

本文针对一般ＦＤ－ＴＤ方法分析计算二维理想导体散射问题所遇到散射体边角处难以精确处理的缺点进行了改进。将边角处总场近似解析解直接引入ＦＤ－ＴＤ法差分公式，得到了有关修正系数，为了检验此方法的有效性，有无限长导体方柱为例分别用一般ＦＤ－ＴＤ法和本文的ＦＤ－ＴＤ方法进行了分析研究，并与ＭＯＭ法进行了比较，所得结果说明改进后的ＦＤ－ＴＤ方法对分析计算导体边角附近电流分布特性是较有效的。     

K0.9Li0.1（Ta0.5Nb0.5）O3晶体压电应变系数的测量

用准静态ｄ＿（３３）测量仪和干涉法相结合。测量了Ｋ＿（０．９）Ｌｉ＿（０．１）（Ｔａ＿（０．５）Ｎｂ＿（０．５）Ｎｂ＿（０．５））Ｏ＿３晶体的压电应变系数。结果为：ｄ＿（３３）＝８６．０，ｄ＿（３３）＝一２９．５，ｄ＿（１５）＝１１２．９×１０￣（－１２）Ｃ／Ｎ．     

梯度折射率棒中传播的高斯光束轨迹解析解及其存在条件的讨论

本文提出光束轨迹方程的一般解，导出解析解的存在条件，推广了文献［１］的光线传播理论，文中以一特定梯度折射率棒为例，讨论了高斯光束在棒中的传播特性。     

Trade-off analysis on cost and manufacturing technology of an electronic product: Case study

A trade-off analysis on the cost and system packaging metrics of an electronic product aimed at the commercial/retail industry has been carried out. By comparing the system cost and packaging metrics with those of comparable consumer products, we have determined that there is opportunity for significant cost, size, and weight reduction of the overall electronics packaging system. These include the use of fine pitch IC packages, smaller discrete components, denser PCB wiring technology, double sided IC package surface mount, surface mount connectors, and improved plastics for the product housing. The analysis concluded that PCB area reduction of 40%, using a single PCB instead of three boards, reduction in board cost of over 50% and product weight reduction of over 28% are possible using available technologies.     

信令网的核心--下一代信令转接点

本文在讨论了下一代信令转接点在满足传统信令网络功能的基础上，着重介绍了下一代的信令转接点上实现的号码携带、灵活路由等新业务，并如何实现传统STP面向下一代网络的平滑过渡。     

HIGH ACCURACY FINITE VOLUME ELEMENT METHOD FOR TWO-POINT BOUNDARY VALUE PROBLEM OF SECOND ORDER ORDINARY DIFFERENTIAL EQUATIONS

1　ＩｎｔｒｏｄｕｃｔｉｏｎＦｉｎｉｔｅｖｏｌｕｍｅｅｌｅｍｅｎｔｍｅｔｈｏｄｏｒＦＶＥＭｕｓｅｓａｖｏｌｕｍｅｉｎｔｅｇｒａｌｆｏｒｍｕｌａｔｉｏｎｏｆｔｈｅｄｉｆ ｆｅｒｅｎｔｉａｌｅｑｕａｔｉｏｎｗｉｔｈａｆｉｎｉｔｅｐａｒｔｉｔｉｏｎｉｎｇｓｅｔｏｆｖｏｌｕｍｅｔｏｄｉｓｃｒｅｔｉｚｅｔｈｅｅｑｕａｔｉｏｎ ,ｔｈｅｎｒｅ ｓｔｒｉｃｔｓｔｈｅａｄｍｉｓｓｉｂｌｅｆｕｎｃｔｉｏｎｓｔｏａｌｉｎｅａｒｆｉｎｉｔｅｅｌｅｍｅｎｔｓｐａｃｅｔｏｄｉｓｃｒｅｔｉｚｅｔｈｅｓｏｌｕｔｉｏｎ ([1 -4 ] ) .…     

完全可分的三元系TS(v,4)的支撑集

§ 1　 IntroductionA triple system of order v and indexλ,denoted by TS(v,λ) ,is a collection of3- ele-mentsubsets Aof a v- set X,so thatevery 2 - subsetof X appears in preciselyλ subsets of A.L etλ≥ 2 and (X,A) be a TS(v,λ) .If Acan be partitioned into t(≥ 2 ) parts A1,A2 ,...,Atsuch that each (X,Ai) is a TS(v,λi) for 1≤ i≤ t,then (X,A) is called de-composable.Otherwise it is indecomposable.If t=λ,λi=1for 1≤ i≤ t,the TS(v,λ) (X,A) is called completely decomposable.It …     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.