Numerical and theoretical study of a Dual Mesh Method using finite volume schemes for two phase flow problems in porous media

Summary. In this paper we are interested in two phase flow problems in porous media. We use a Dual Mesh Method to discretize this problem with finite volume schemes. In a simplified case (elliptic - hyperbolic system) we prove the convergence of approximate solutions to the exact solutions. We use the Dual Mesh Method in physically complex problems (heterogeneous cases with non constant total mobility). We validate numerically the Dual Mesh Method on practical examples by computing error estimates for different test-cases. Received March 21, 1997 / Revised version received October 13, 1997     

双齿配位过渡金属化合物化学——Ⅲ.钒的邻巯基苯酚配合物的顺磁谱研究

测定了二个顺磁性化合物(Ph_1P)[V_2(mp)_6](Ⅰ)和(Ph_4P)_2[NaV(mp)_3 (MeCN)(MeOH)](Ⅱ)(H_2mp=邻巯基苯酚,o-HO_1C_6H_4SH)的固态和/或溶液中的顺磁波谱。(Ⅰ)的77K固态谱及(Ⅱ)的室温固态谱均经模拟计算,认为它们的钒原子处在S=l/2的Ⅰ=7/2状态,(Ⅱ)的低温(77K)溶液谱(乙腈)与Ⅱ的固态谱相同,均有特征的八条精细结构,认为非配对电子基本上定域在钒原子的周围。     

气体放电击穿过程的物理和数值研究

本文对低气压（１０＾－２Ｐａ）热阴极气体放电的击穿过程给出了物理描述和相应的双流体数学型，并发展了一种选择和调整未知初始条件的有效算法，可以通过伴随试射法得到对初始条件十分敏感的非线性两点边值常微分方程组的数值解，从而给出这类气体放电中击穿过程的定量描述。     

水闸闸室结构三维样条边界元分析

用三维样边界元法分析水闸闸室结构。底板，闸墩和载水墙等为其子结构，交通桥，工作桥和胸墙等处理为内部支撑。地基和边载可以是任意的，只要能给定地表位移面力关系。在各种工况下，不论是设置平板门还是弧形门，是平底板是反拱底板，即使在稀疏剖分下也能给出高精度的位移场，应力场和地基反力场。     

多目标分数变分问题的对偶性

本文利用参数逼近在函数广义（F，ρ）－凸的条件下，建立了一类多目标式变分问题关于有效解的对偶理论。     

用13CNMR研究聚甲基丙烯酸锡酯的立构序列分布

本文测定了自由基型溶液聚合的聚甲基丙烯酸三甲基锡酯(PTMTM),聚甲基丙烯酸三乙基锡酯(PTETM)和聚甲基丙烯酸三丁基锡酯(PTBTM)的¹³C-NMR谱,对其C-2谱扩展分峰,计算立构序列,从定量数据表明,聚合物样品的空间立构富于或稍富于间规立构,随取代基的体积增大而趋于无规分布,作者认为受空间位阻效应和分子内或分子间形成配位键的影响。     

蛙虹彩病毒cop基因的克隆表达及亚细胞定位

从蛙虹彩病毒(Rana gryliovirus,RGV)基因组中克隆了含凋亡相关结构域的新基因-cop(Caspaserecruit ment domain only protein,COP)基因的全部编码区,成功构建了重组表达载体,进行了原核表达,并在鲤鱼上皮瘤细胞(Epithelioma papulosumcyprini,EPC)中进行了亚细胞定位.序列分析表明,RGVcop基因全长288 bp,编码一个长为95 aa,分子量为10.4×103的推定蛋白.二级结构预测表明其含有5个α螺旋.同源性比对分析显示,RGVcop与其他6株虹彩病毒及人类cop相关蛋白同源性最高为94%,最低为33%.重组原核表达质粒pET28a-COP转化大肠杆菌BL21后,经IPTG诱导表达,获得一条约14×103的融合蛋白.重组真核表达质粒pEGFPN3-COP转染EPC细胞,经DAPI染色后,在荧光显微镜下观察显示重组蛋白在整个细胞中均有分布.     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.     

Polarization inscription in ferroelectric (111) PZT and (100) SBT films

Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch². Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular.     

Steady state analysis of an M/G/1 queue with two phase service and Bernoulli vacation schedule under multiple vacation policy

This paper examines the steady state behaviour of a batch arrival queue with two phases of heterogeneous service along and Bernoulli schedule vacation under multiple vacation policy, where after two successive phases service or first vacation the server may go for further vacations until it finds a new batch of customer in the system. We carry out an extensive stationary analysis of the system, including existence of stationary regime, queue size distribution of idle period process, embedded Markov chain steady state distribution of stationary queue size, busy period distribution along with some system characteristics.