Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

WDM传输系统中泵浦配置对光纤拉曼放大器增益特性的影响

通过理论分析和模拟运算,研究了光纤拉曼放大器泵浦优化的一般规律。     

数字散斑干涉技术及应用

介绍了数字散斑干涉技术在位移、应变、振动和医学诊断等领域中的应用和国内外发展状况。提出了一种新的应用领域—数字散斑干涉技术在语音识别中的应用,并对该方法作了介绍,讨论了它的特点。     

GPS在无源多基地侦察系统中的应用

针对无源多基地侦察系统的高精度同步问题，提出了一种较为简单可行的方法-利用GPS进行校频和共视比对。     

激光晶体Nd:YVO4的形貌及生长缺陷

本文报道了应用环境扫描电镜（ESEM）和同步辐射X射线白光形貌术对采用提拉法生长出的Nd:YVO4晶体进行的形貌及生长缺陷的分析,获得了该晶体的开裂表面的ESEM形貌像以及取自晶体肩部和中间部位的（001）面的同步辐射白光形貌像,观察到了位错、包裹物等缺陷,可为生长高质量的Nd:YVO4晶体提供重要的启示.     

头盔显示器的关键技术及有关设计问题综述

头盔显示器可以提高驾驶员的态势感知能力，红外传感器提供的信息，使驾驶员的态势感知能力大大加强，头盔显示器提供的红外图像，使恶劣的天气和黑夜不再成为驾驶员作战的障碍，概述了头盔显示器的发展过程和关键技术，介绍了当前空军用头盔显示器的技术问题，解决方法，设计示例。     

一种改进的交错脉冲解速度模糊方法

研究了脉冲多普勒气象雷达中用于解速度模糊的交错脉冲方法，理论分析了时域脉冲对处理中速度估计公式的局限性，同时对该公式进行了修正。仿真结果表明，改进的交错脉冲方法具有更好的解速度模糊性能，而且易于实时处理。     

A nilpotent Roth theorem

Let T and S be invertible measure preserving transformations of a probability measure space (X, ℬ, μ). We prove that if the group generated by T and S is nilpotent, then exists in L ²-norm for any u, v∈L ^∞(X, ℬ, μ). We also show that for A∈ℬ with μ(A)>0 one has . By the way of contrast, we bring examples showing that if measure preserving transformations T, S generate a solvable group, then (i) the above limits do not have to exist; (ii) the double recurrence property fails, that is, for some A∈ℬ, μ(A)>0, one may have μ(A∩T _-n A∩S ^{- n} A)=0 for all n∈ℕ. Finally, we show that when T and S generate a nilpotent group of class ≤c, in L ²(X) for all u, v∈L ^∞(X) if and only if T×S is ergodic on X×X and the group generated by T ^-1 S, T ^-2 S ²,..., T ^-c S ^c acts ergodically on X. Oblatum 19-V-2000 & 5-VII-2001?Published online: 12 October 2001     

铁电存储场效应晶体管I-V特性的物理机制模拟

文章讨论的模型主要描述了铁电存储场效应晶体管（FEMFET）的I-V特性。从理论结果可反映出几何尺寸效应和材料参数对晶体管电特性的影响。传统的阈值电压的概念巳不再适用，由于铁电层反偏偶极子的开关作用，自发极化的增加对存储器的工作状态产生很小的影响。该模型可用于设计和工艺参数的优化，并由直观原型的方法得到了验证。     

On a conjecture of Cox and Katz

This note shows that a certain toric quotient of the quintic Calabi-Yau threefold in provides a counterexample to a recent conjecture of Cox and Katz concerning nef cones of toric hypersurfaces. Received: 8 February 2001; in final form: 17 September 2001 / Published online: 1 February 2002