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101.
102.
Traveling wave Ti:LiNbO3 Mach-Zehnder optical modulators with buried electrodes and etched grooves in the SiO2 buffer layer are analyzed by the finite element method. The tradeoff between the bandwidth BW and the half-wave voltage Vπ is discussed. The value of BW/Vπ is used to weight the total performance of the modulator. Taking a thick buffer layer and etching deep grooves in the buffer layer are demonstrated as two effective methods to improve the performance of the modulator. A 3-dB optical bandwidth of 18 GHz with half-wave voltage 5V at a wavelength of 1.55 pm could be obtained even though the electrode is not very thick. When the requirement of half-wave voltage is not very critical, a bandwidth of more than 100 GHz can be obtained. 相似文献
103.
104.
续竞存 《固体电子学研究与进展》1996,16(3):254-258
用电荷控制及热电子弹道运动模型计算InAs/InP0.7Sb0.3热电子晶体管的截止频率fT及最高振荡频率fmax。结果表明,fT、fmax分别达到280GHz及600GHz。并指出,通过生长GaSb中间层,InAs/InP0.7Sb0.3HET可在GaAs衬底上实现单片集成。 相似文献
105.
This Review discusses the synthesis and characterization by our Group of new antibiotics belonging to the class of penicillins, cephalosporins and rifamycins with ferrocenyl and 1, 1′-ferrocenilene residues in the molecule. As reactants for 6-aminopenicillanic acid (6-APA) and 7-aminocephalosporanic acid (7-ACA) the following were used: 1, 1-bis(chlorocarbonyl)ferrocene, ferrocenyl sulfochloride, 1, 1′-ferrocenylenedisulfochloride and thioglycolic acids S-modified with ferrocene. In the synthesis of rifamycins, the hydrazides of the thioglycolic acids, S-modified with ferrocene, were employed as nucleophilic agents. The synthesized intermediates were characterized by elemental analysis, TLC, IR, UV and 1H NMR spectra. The characterization of new antibiotics was made by TLC, IR and UV spectral analysis. Biological activity was tested on Gram-negative and Gram-positive bacteria. Good activity is reported towards Gram-positive bacteria in the case of derivatives containing residues of thioglycolic acid S-modified with ferrocene, the antibacterial activity being similar to that of amoxicillin, carbenicillin and cephalothin. All compounds are inactive towards Gram-negative bacteria. 相似文献
106.
107.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献
108.
109.
以Nd:MgO:LiNbO_3同时兼作激活介质和非线性光学材料,研究自倍频激光器。用小型氙灯泵浦,在室温下获得二次谐波激光(0.547μm) 阈值小于4.8'J,最大输出400μJ/shot,工作温度范围大于20℃~45℃,无光损伤。 相似文献
110.
多传感器数据融合技术已在军事领域受到广泛重视,并逐步走向实际应用,本文简要介绍它的一般组成、特点以及在军事C^3I系统应用中的主要功效。 相似文献