On integration in complete bornological locally convex spaces

A generalization of I. Dobrakov's integral to complete bornological locally convex spaces is given.     

Highly Flexible and Stretchable Nanowire Superlattice Fibers Achieved by Spring‐Like Structure of Sub‐1 nm Nanowires

Conventional inorganic nanowire (NW) fibers are usually not stretchable and elastic, which may limit their practical applications. Inspired by the similarity between inorganic sub‐1 nm NWs and polymer chains in dimension, and helical spring‐like structure of cellulose in cherry bark, highly flexible and stretchable NW superlattice fibers composed of sub‐1 nm GdOOH NWs are fabricated. The NW fibers could be twined, bent, twisted, and tied without any damage. When the strain is less than 10%, the fibers present elastic deformation. The elongation at break of the fibers usually reaches ≈40–50% and the highest elongation could reach ≈86%. Excellent flexibility and stretchability of the NW fibers are attributed to the well‐aligned spring‐like NWs assembled superlattice, which are demonstrated by scanning electron microscopy tests, synchrotron small‐angle X‐ray scattering, and obvious birefringence. Moreover, NW‐nanoparticle (NP) fibers are fabricated, inspired by inorganic nanoparticle–reinforced polymers. The strength is improved compared with the NW fibers. Based on this work, it is possible to fabricate multifunctional, flexible, and stretchable inorganic NW materials composed of different inorganic sub‐1 nm NWs, which may be useful in practical applications.     

一种新型软X 射线气溶胶荷电器的开发与评测 #br#

现有荷电器对 1∼3 nm 气溶胶的通过效率和荷电效率都较低。研发了一种新型软 X 射线气溶胶双极荷电器, 通过结构设计的改进极大地提高了 3 nm 以下气溶胶的通过效率, 同时该荷电器对不同粒径气溶胶的本征荷电效率仍 与现有荷电器相近。实验室评测结果表明: 在 1 L·min−1 流量下, 新型荷电器对 3 nm 以下不同粒径气溶胶的通过效率 与 TSI 3088 软 X 射线荷电器相比可提高 175%∼300%; 在 2.5 L·min−1 流量下, 可提高 115%∼173%。同时, 新型荷电器 对 10∼40 nm 及 3 nm 以下气溶胶的本征荷电效率与目前广泛使用的 Fuchs 稳态理论近似公式计算得出的荷电效率及 其他类似荷电器的实测荷电效率基本吻合。相对于现有的商业荷电器, 该新型荷电器对 3 nm 以下气溶胶有着更高的 表观荷电效率, 具有潜在的应用价值。     

一种占空比可调的高速电平转换电路

提出一种占空比可调的高速电平转换电路,能够将频率高达1.33 GHz的低电压域信号提升至高电压域输出。在传统电平转换电路的基础上,增加了占空比调节电路,使得电路工作在不同I/O域时,通过调整接入的PMOS管数量来间接调整控制管的宽长比,进而实现占空比可调。增加了快速响应电路,引入首尾相接的反相器组,通过正反馈功能,加速实现电平转换。基于Global Foundry 14 nm CMOS工艺进行电路设计,采用SPECTRE软件进行仿真。仿真结果表明,该电路能够实现从0.9 V核心电压到2.5 V I/O电压的稳定转换,传播延时为225 ps,占空比为49.63%。当高电压域电压变换为1.8 V后,通过占空比调节电路,使占空比仍可保持在50%左右。     

Quantum transport simulation of the two-dimensional GaSb transistors

Owing to the high carrier mobility,two-dimensional (2D) gallium antimonite (GaSb) is a promising channel material for field-effect transistors (FETs) in the post-silicon era.We investigated the ballistic performance of the 2D GaSb metal-oxide-semiconductor FETs with a 10 nm-gate-length by the ab initio quantum transport simulation.Because of the wider bandgap and better gate-control ability,the performance of the 10-nm monolayer (ML) GaSb FETs is generally superior to the bilayer counterparts,including the three-to-four orders of magnitude larger on-current.Via hydrogenation,the delay-time and power consumption can be further enhanced with magnitude up to 35％ and 57％,respectively,thanks to the expan-ded bandgap.The 10-nm ML GaSb FETs can almost meet the International Technology Roadmap for Semiconductors (ITRS) for high-performance demands in terms of the on-state current,intrinsic delay time,and power-delay product.     

Detection of N-nitroso-bile acids at 285 nm in reverse-phase HPLC

In the present study, we developed a novel, simple, and specific detection method using an RP-HPLC at UV 285 nm for the separation and quantification of N-nitroso-bile acids. First, we found that N-nitroso-bile acids have a specific spectrophotometric absorbance at 285 nm. Using this 285 nm detection system, we could especially measure N-nitroso-bile acids, even in co-existence of non-N-nitroso-bile acids. Next, we observed the decomposition of N-nitroso-glychocholate under alkaline, acidic, and neutral conditions. N-nitroso-glychocholate rapidly decomposed under alkaline conditions (pH 9) (t(1/2) = 0.96 h), but remained fairly stable under acidic (pH 2) (t(1/2) = 12.8 h) and neutral (pH 7) (t(1/2) = 7.8 h) conditions. This study is the first report, which simply and specifically analyzes N-nitroso-bile acids using an RP-HPLC system.     

A PUFs-based hardware authentication BLAKE algorithm in 65 nm CMOS

This paper presents a hardware authentication BLAKE algorithm based on physical unclonable functions (PUFs) in Taiwan Semiconductor Manufacturing Company low-power 65 nm CMOS. To support hardware authentication feature, PUFs have been organised in BLAKE algorithm as the salt value. The trials table method is used to improve the robust of PUFs, resulting in approximately 100% stability against supply voltage variations form 0.7 V to 1.6 V. By discussing the G-function of BLAKE algorithm, the hardware implementation is considered for acceleration, resulting in significant performance improvements. The die occupies 2.62 mm² and operates maximum frequency 1.0 GHz at 1.6 V. Measured results show that PUFs have great random characteristic and the authentication chip dissipates an average power of 91 mW under typical condition at 1.2 V and 780 MHz. In comparison with other works, the PUFs-based BLAKE algorithm has hardware authentication feature and improves throughput about 45%.     

纳米钯膜电极的制备、结构表征和特殊反应性能

用循环伏安方法制备纳米钯膜电极,运用扫描隧道显微镜和原位红外光谱等方法研究其结构和反应性能.STM图像表明,制备的纳米钯膜具有特殊的层状结构,纳米级厚度的层状晶体由直径6nm左右的Pd微晶聚集而成.发现当钯膜厚度为几个纳米时,CO的吸附表现出异常红外效应,即红外谱峰反向和红外吸收显著增强(增强因子可达42.6).纳米钯膜电极对氢的反应也具有特殊的性能,与氢向钯晶格扩散吸收过程相比较,氢吸脱附的表面过程成为主要反应.研究结果还指出,纳米钯膜电极的异常红外效应和对氢反应的特殊性能与钯膜厚度密切关联,并可归结为钯膜材料的纳米尺度效应.     

碱性介质中纳米薄膜Ru电极上CO吸附的异常红外效应

研制纳米级厚度的Ｒｕ薄膜电极,并运用电化学原位ＦＴＩＲ反射光谱研究碱性介质中ＣＯ的吸附。检测到ＣＯ以线型吸附态为主,但也存在少量桥式吸附态,分别在１９６０和１７８０ｃｍ＾－１附近红出红外吸收谱峰。发现纳米Ｒｕ膜电极具有异常红外效应,即ＣＯ谱峰方向倒反,强度增强和半峰宽增加,测得在碱性溶液中吸附态ＣＯ的红外吸收被增强了３３倍,其增强因子是酸性溶液中的两倍左右。