Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

Abstract

We have investigated the resonant tunnelling of electrons through X-valley related states in a single AlAs barrier with Si donor & doping. Under high hydrostatic pressure all the peaks observed in the differential conductance-voltage (σ-V) characteristics shift with a pressure rate of -lSmeV/kbar, which is expected for X-minima related electronic states.     

Origin of periodic domain structure in Er-doped β′-(Sm,Gd)2(MoO4)3 crystal lines patterned by laser irradiations in glasses

Er³⁺-doped β′-(Sm,Gd)₂(MoO₄)₃ crystal lines are patterned on the surface of Er₂O₃-Gd₂O₃-Sm₂O₃-MoO₃-B₂O₃ glasses by continuous-wave Yb:YVO₄ laser irradiations (wavelength: 1080 nm, power: 1.3 W, scanning speeds: 5 μm/s), and the origin of the periodicity of self-organized domain structures with high and low refractive index regions in crystal lines is examined from polarized optical microscope (POM) observations, micro-Raman scattering spectrum, and photoluminescence spectrum measurements. It is found that the periodicity of domain structures changes largely depending on Er₂O₃ content, i.e., the length of high (bright color in POM observations) and low (dark color) refractive index regions increases with increasing Er₂O₃ content and homogeneous crystal lines with no periodic domain structures are patterned in Er₂O₃-Sm₂O₃-MoO₃-B₂O₃ glass with no Gd₂O₃. Considering that the degree of ferroelasticities in β′-(Sm,Gd)₂(MoO₄)₃ crystals decreases due to the incorporation of Er³⁺ ions, it is demonstrated that the origin of periodic domain structures in laser-patterned lines is due to spontaneous strains in ferroelastic β′-(Sm,Gd)₂(MoO₄)₃ crystals.     

铕掺杂无机红色荧光材料的研究进展

介绍了高温固相反应法、sol-gel法、化学共沉淀法、水热合成法、微波辐射法等几种制备铕掺杂红色荧光材料的方法,并比较了各种制备方法的优缺点;总结了以氧化物、无机非金属酸盐和金属酸盐为基质材料的铕掺杂红色荧光材料的制备方法及应用。最后对铕掺杂红色荧光材料的发展进行了展望。     

SO42-/SnO2-Fe2O3固体酸催化下的环酮Baeyer-Villiger氧化反应及缩合反应

采用共沉淀的方法制备了不同Fe 掺杂量的SO₄^2-/SnO₂-Fe₂O₃固体超强酸催化剂. 利用傅里叶变换红外(FTIR)光谱, 粉末X射线衍射(XRD), N₂吸附-脱附实验(BET), 热重(TG)分析和扫描电镜(SEM)等方法对样品进行了表征. 考察了所得催化剂对4-叔丁基环己酮与乙二醇缩合反应的催化性能. 实验结果表明, 与未经过掺杂改性的SO₄^2-/SnO₂固体酸催化剂相比, 改性后催化剂的催化性能得到了改善. 研究了以Fe/Sn 摩尔比为0.5的SO₄^2-/SnO₂-Fe₂O₃固体酸为催化剂, 部分醛酮类化合物与乙二醇及1,2-丙二醇的缩合反应. 考察了反应时间、催化剂用量等因素对反应的影响. 同时, 将所得催化剂应用于环酮Baeyer-Villiger 氧化反应中, 催化剂表现出良好的催化活性, 且催化剂具有一定的循环使用性.     

Mn2+doping-induced-effects on commensuration and incommensuration of potassium zinc chloride crystal

Undoped and Mn²⁺-doped with different concentrations of potassium zinc chloride (KZC) crystals were grown from aqueous solutions by slow evaporation. The dielectric constant (ε), dielectric losses (tan?δ) and ac conductivity (σ_ac) of the crystals in the ferroelectric-commensurate, incommensurate and normal phases have been measured as a function of frequency, in the range 1–100?kHz, and temperature, in the range 300–580?K. Virgin samples were subjected to measurements of the frequency dependence at selected temperatures and measurements of the temperature dependence was then followed using the same samples. The increase of ε with T could be due to a combination of conductivity, structural variations and discommensuration (DC) formation and pinning as well. The increase of tan?δ with temperature was attributed to relaxation loss in addition to conduction loss, which increases more rapidly with temperature. The ac conductivity (σ_ac) and tan?δ along the polar axis of KZC increased significantly with increasing Mn²⁺ content while ε decreased. σ_ac changed with frequency according to a power law of the form σ_ac?=?f? ^s where 0.15<s<1.27. A linear decrease of ε and tan?δ with increasing the frequency was also found. The obtained results were treated by considering the effect of Mn²⁺-doping on stripples nucleation, DC evolution/annihilation, DC-lattice formation and DCs pinning by the crystal lattice and/or structural defects for virgin and thermally treated samples.     

Characterization and Photocatalytic Performance of Rb+-Doped TiO2 Photocatalysts

ABSTRACT

Rb⁺-doped TiO₂ nanoparticles with higher photocatalytic activity were prepared by sol–gel method. The prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive analysis of X-rays (EDAX), and surface area (BET) measurements. The photocatalytic activity for the degradation of rhodamine B (RhB) was evaluated. The effects of calcination temperature, Rb⁺-doping amount, and the dosage of catalyst in the reaction liquid were investigated. The results showed that Rb⁺ doping can inhibit phase transformation from anatase to rutile, increase surface area of TiO₂ crystals, and reduce crystallite size. TiO₂ doped with 1% Rb⁺ and calcined at 650°C shows much higher photoactivity than the others when the doping level of Rb⁺ and calcination temperature are 0–5% and 350–850°C, respectively. The kinetics of the degradation of RhB was also analyzed. The kinetics of this reaction fits the pseudo first-order kinetics model well, and the reaction rate constants for pure TiO₂ and Rb1-650 are 0.086 min^?1 and 0.226 min^?1 respectively. Doping with Rb⁺ improves the photocatalytic activity of TiO₂ significantly.     

TiO2/Gd2O3纳米粉体的制备、表征及光催化活性

利用酸催化的溶胶-凝胶法制备了纯TiO₂和Gd³⁺(0.5wt%)掺杂的TiO₂纳米粉体，采用XRD、BET、XPS、紫外-可见漫反射谱(DRS)和表面光电压谱(SPS)等技术进行了表征；以亚甲基蓝(MB)的光催化降解为探针反应，评价了其光催化活性；探讨了Gd³⁺掺杂对TiO₂纳米粉体的光催化活性的影响机制。结果表明，TiO₂/Gd₂O₃纳米粒子对MB溶液的光催化活性提高到纯TiO₂的1.5倍。掺杂Gd³⁺可以强烈抑制TiO₂由锐钛矿相向金红石相的转变；阻碍TiO₂晶粒的生长；提高高温组织稳定性，改善粉体的表面织构特性；形成光生电子的浅势捕获陷阱，抑制e^-/h⁺复合，这些因素共同作用最终导致TiO₂/Gd₂O₃纳米粉体的光催化活性明显提高。XPS分析结果证实，掺杂Gd³⁺导致粉体的表面羟基含量降低。由于产生了量子尺寸效应，复合粉体的紫外吸收带边蓝移，光的吸收能力略有降低。     

Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces

We investigated the delta-doping (δ-doping) of Si using SiH₄ on MOVPE-grown GaAs (001) vicinal surfaces to explore the possibility of selective incorporation of Si along atomic steps, and to demonstrate doping quantum wires by the combination of multiatomic steps and wire-like doping. It was found that the doping density on vicinal surfaces was enhanced as the misorientation angle was increased, which suggested the enhanced decomposition of SiH₄ and the selective incorporation of Si at step edges. It was also found that this selective incorporation could be enhanced by annealing the surface prior to the δ-doping, which resulted from the reduced incorporation of Si at the terrace regions. Anisotropic electron transport properties which are expected from the wire-like incorporation along step edges are also discussed.     

Li+掺杂浓度对Y2O3：Eu3+发光影响的理论

在团簇近似的基础上,利用分子动力学和密度泛函计算相结合的手段,在Y₂O₃:Eu³⁺中研究了随Li⁺掺杂浓度的变化,缺陷形成情况以及C₂位处Y-O键长的变化对电子态密度的影响.结果表明,随着Li⁺掺杂浓度的增加,与C₂格位相关团簇的Y-O键平均键长出现了增加-减小-增加的变化趋势,这可能是引起此类材料发光强度随Li⁺浓度出现类似变化的原因.     

Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure

In this paper, the performances of a new δ-doping field-effect transistor utilizing an InGaP/GaAs camel-gate structure by theoretical and experimental analysis will be reported. An analytical model related to drain saturation current, transconductance, potential barrier height, gate-to-source depletion capacitance, and unit current gain frequency is developed to explain the device performances. The employments of n⁺-GaAs/p⁺-InGaP/n-GaAs heterostructure gate and the δ-doping channel with heavy-doping level were used to improve transconductance linearity and enhance current drivability. For a 1×100 μm² device, the experimental results show that a drain saturation current of 1120 mA/mm, a maximum transconductance of 240 mS/mm, and a large V_gs swing larger than 3.5 V with the transconductance higher than 200 mS/mm are obtained. In addition, the measured unit current gain frequency f_t is 22 GHz. These experimental results are consistent with theoretical analysis.