Effects of Co~（2＋）Doping on the Crystal Structure and Electrochemical Performance of LiFePO_4

Co2+-doped LiFePO4/C composite material was prepared by solid-state synthesis method using Fe2O3,Li2CO3 and NH4H2PO4 as the starting materials.The structures and elec-trochemical performance of samples were studied by XRD,SEM and constant current charge-discharge method.The results showed that the Co2+ doping did not change the crystal structure of LiFePO4.The unit cell volume changed with the increase of Co2+,and reached the maximum at x = 0.04.The LiFe0.96Co0.04PO4/C sample proved the best electrochemical properties.Its initial discharge capacity was 138.5 mA·h /g at 1 C rate.After 30 cycles,the capacity remained 127.7 mA·h /g,and the capacity retention rate was 92.2%.     

掺杂Fe~(3+)的TiO_2薄膜电极的电化学研究

适量Fe~(3+)掺杂可以提高TiO2薄膜电极的光催化氧化活性。采用交流阻抗谱、平带电势等方法研究了掺杂Fe~(3+)的纳米TiO_2薄膜电极的表面结构特征及其催化性能,为其光电转换机理提供了电化学依据。     

Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs,AlGaAs and AlGaAs/GaAs single quantum wells

We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.     

Single electron charging of InAs quantum dots characterized by δ-doped channel conductivity

The electron tunneling through single self-assembled InAs dot in split-gate δ-doped channel transistor structure is reported for the first time. In the nearly pinch-off conditions, the channel current was found to manifest itself single-electron tunneling through a self-assembled InAs dot buried in adjacent to the channel. The line shape of the single-electron tunneling current through a single InAs dot is discussed.     

SiO2掺杂对BST-MgO陶瓷微观结构和介电性能的影响

采用普通陶瓷工艺制备了0.4Ba0.6Sr0.4TiO3-0.6MgO-xSiO2(0≤x5.0%)陶瓷,研究了SiO2含量对所制BST-MgO(BSTM)陶瓷微观结构以及低频、微波介电性能的影响.XRD分析表明,随着掺杂量的增加,SiO2在BSTM陶瓷中首先以SiO2的形式存在,然后与MgO反应生成Mg2SiO4.质...     

宽带光放大器用掺Er3+碲钨酸盐玻璃

制备了掺Er^3 的TeO2-WO3-ZnO-ZnF2(TWZOF)玻璃,测量了Er^3 在玻璃中的吸收光谱和970nm激光二极管激发下的荧光光谱和荧光寿命,分别采用J-O理论和McCumber理论计算了Er^3 离子的J-O强度参量Ωt(t=2,4,6)和其1．5μm发射的吸收截面和发射截面,研究了其荧光强度、荧光寿命和发射带宽与ZnF2含量的关系。结果表明,Er^3 在TWZOF玻璃中具有较大的1．5μm发射截面,其峰值发射截面为0．86pm^2;同时,Er^3 在TWZOF玻璃中具有很大的1．5μm发射带宽,所得半峰全宽在68～83nm之间;Er^3 在TWZOF玻璃中还具有较小的Ω2值和较大的Ω6值,且随ZnF2含量的增加,Ω2和Ω4均增大;Er^3 离子1．5μm发射峰值荧光强度和荧光寿命总体也随ZnF2含量的增加而增加。     

高灵敏度Sb基量子阱2DEG的霍尔器件

用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上。设计了由双δ掺杂构成的Hall器件的新结构,有效地提高了器件的面电子浓度。与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比,室温下器件电子迁移率从15 000 cm²·V^-1·s^-1 提高到16 000 cm²·V^-1·s^-1。AFM测试表明材料有好的表面形态和结晶质量。从77 K 到300 K对Hall器件进行霍尔测试,结果显示器件不同温度范围有不同散射机构。双δ掺杂结构形成高灵敏度、高二维电子气（2DEG）浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景。     

双包层光纤光栅选频双包层光纤激光器

双包层光纤激光器中多采用法布里珀罗(F-P)线形腔结构,谐振腔为一只二向色镜和光纤端面菲涅耳反射镜(反射率约为4％)构成,这属于一种有缺陷的腔结构,其稳定性不好,产生激光的波长很难得到有效控制,后腔镜不能精确选择激光器的输出波长,激光器的输出谱线较宽。在某些对激光波长有明确要求的应用中,该结构会受到限制。采用布拉格光纤光栅作腔镜,利用其窄带滤波特性,可以得到窄线宽的激光输出,目前报道的作为腔镜的布拉格光纤光栅为在单包层光敏光纤上制作而成,然后分别将不同反射率的光纤光栅与双包层增益光纤熔接,这给腔镜与双包层光纤之间带来很大的耦合损耗,影响了激光器的功率输出。该文报道了用相位掩模法在双包层光纤芯上写入了布拉格光纤光栅,并把此光纤光栅做为后腔镜．对长度为10m、20m的D形掺Yb^3 双包层光纤激光器进行实验研究,在1058nm附近得到稳定的窄线宽激光输出,3dB带宽为0．329nm。激光器最大输出功率为570mW。最后对实验结果进行了理论分析。     

掺Nd3+碲酸盐玻璃光谱性质的研究

制备了Nd3+掺杂的碲酸盐玻璃, 测量了试样的吸收光谱、发射光谱, 计算了碲酸盐玻璃中Nd3+离子的强度参数(Ω2, Ω4, Ω6), 给出了Nd3+离子的发光特性(A, β, τrad, σ)的计算结果, 研究了其荧光特性、浓度淬灭及其机制. 研究发现组分70TeO2-20ZnO-(10-x)La2O3-xNd2O3(%,摩尔分数)碲酸盐玻璃具有高的发射截面和低声子能的特性. 当x为0.5时荧光强度和发射截面最大, 即在碲酸盐玻璃中Nd3+的最佳掺杂浓度为0.5%(1.93×1020 ions·cm-3). 碲酸盐玻璃中Nd3+离子实测荧光特性与计算结果基本一致.     

阱内δ掺杂GaSbBi单量子阱红外发光效率的光致发光光谱研究

采用变激发功率红外光致发光(Photoluminescence,PL)光谱方法研究四个不同阱内δ掺杂面密度的GaSb_0.93Bi_0.07/GaSb单量子阱(Single Quantum Well,SQW)及其非掺杂SQW参考样品。通过分析GaSbBi SQW和GaSb势垒/衬底成分的PL强度演化,发现阱内δ掺杂导致红外辐射效率显著降低,相对下降幅度约为33%-75%。进一步分析结果表明,发光效率下降来源于界面恶化引发的“电子损失”和阱内晶格质量下降导致的“光子损失”的共同作用。这一工作有望为稀Bi红外发光器件的性能优化提供帮助。