场限制环的安全环距设计原理

场限制环作为一种可与许多器件工艺相容的ＰＮ结终端得到了广泛应用。存在的一个问题是其效果随结构参数有过分敏感的变化。文中认为：作为设计指导思想的最佳环距原则是加重这一敏感性的重要原因。作为改进，提出了新的安全环距设计原则。按安全环距原则设计，除可明显缓解终端效果随结构参数敏感变化的问题外，还可有效地提高在同样结构和工艺条件下所制成器件的额定电压。     

基于蓝牙的高压真空开关信息传输系统

高压真空开关真空度的在线检测已有多种方法,但这些方法中存在一个普遍问题,就是信息的传输和电源供应条件限制,使得传感器的安装由于高电压安全问题顾忌甚多,降低了检测灵敏度。利用基于蓝牙的近距离无线通信技术提出的高压真空开关在线监测系统信息传输方案,解决了高压真空开关真空度在线监测传感器的安装、检测和信息传输的难题,使得检测灵敏度大大提高。     

CP1模型的拓扑项的可移性与θ真空

研究了1十1维CP¹模型的拓扑项的可移性,求得了移去CP¹模型拓扑项的么正变换,并且找到了拓扑项与 真空以及几何相因子的关系.     

在修改的r~2势下q~3P_0凝聚

对r2 型关联核的大r行为作了修改 ,使得它在小r区域变为r2 关联核 ,而在大r区域趋于一个常数A ,因此不再是绝对禁闭的 .通过计算 ,发现这种对大r行为的修改虽然能够使真空凝聚保持在r2 关联核下的主要性质 ,但它的影响仍然是显著的 .     

Interface Instability of Diamond Crystals at High Temperature and High Pressure

Diamond growth instability at high temperature and high pressure (HPHT) has been elucidated by observing the cellular interface in diamond crystals.The HPHT diamond crystals grow layer by layer from solution of carbon in the molten catalyst.In the growth of any other cyrstals from solution,the growth interface is not stable and should be of the greatest significance to understand further the diamond growth mechanism.During the diamond growth,the carbon atoms are delivered to the growing diamond crystal by diffusion through a diamond crystal-solution boundary layer.In front of the boundary layer,there is a narrow constitutional supercooling zone related to the solubility difference between diamond and graphite in the molten catalyst.The diamond growth stability is broken,and the flat or planar growth interface transforms into a cellular interface due to the light supercooling.The phenomenon of solute trails in the diamonds was observed,the formation of solute trails was closely associated with the cellular interface.     

Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data,and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al^ ions, are also investigated. Studies on AI implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al^ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.     

真空微电子技术

本文简要介绍真空微电子管的优越性及近两年来的水平,建议我们今后应做的几项工作。