硅微机械平面电感的衬底效应

提出了一种品质因数(Q)的计算方法,分析了对于平面螺旋电感Q值产生决定性影响的各种因素.在微机械电感传统模型的基础上对涡流效应产生的寄生电阻和有损衬底电容进行了细致的研究,并且得到了理论结果.研究结果表明,Q值的大小与几何参数和工作频率均有关.通过理论分析和计算,可以得到结构优化的方法.     

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.     

Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering

Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.     

可调谐激光二极管具有超窄线宽

窄线宽可调潴激光二极管可能广泛用于光谱学领域。对于具有一定谱宽的增益介质，我们希望可在整个增益区调谐。由于在光谱区边缘增益很弱，通常窄线宽操作会引起附加损失，并限制了调谐范围。最近德国Mainz大学研究人员为激光二极管开发一种透射光栅外腔装置，允许在全光谱增益区以超窄线宽运行。而且这种激光器已经作为稳定铯共振的波长计使用。     

X波段五腔渡越管振荡器的理论与实验研究

 提出了一种新结构的X波段五腔渡越管振荡器，进行了理论和实验研究。根据场分布进行了一维非线性分析，结果表明该结构可以产生高功率微波，并判断了工作模式，为TM₀₁模的3π/5模。采用粒子模拟验证了一维非线性分析的结论，并优化设计出五腔渡越管振荡器,优化结果为：输出功率约1 GW， 工作频率9.3 GHz，束波转换效率约22%。实验中，通过参数调节，得到频率约9.25 GHz，峰值功率约780 MW，脉宽（半高宽）21 ns的输出微波，束波转换效率约为16%。实验结果与模拟结果基本符合。     

Photocatalytic Synthesis of Oxygenates from Gaseous CO2 and CH4 over Semiconductor

Photoinduced synthesis of CO2 and CH4 was investigated using a batch reaction system on several photoactive materials supported on silicon dioxide. Single semiconductor showed higher selectivity to C1 compounds. The production of C2-C3 oxygenates took place preferentially on composite semiconductor photocatalysts. In particular, it was found that acetone was the primary product over Cu/CdS-TiO2/SiO2.     

都江堰是水利科学的一个结晶体——专访四川省水利科学研究员教授级高级工程师冯广宏

竹笼卵石有时候比水泥大坝还要好，它有口无闸，一分为二，二分为四，依此类推，水势被减缓了、分解了，这是以柔克刚，不是人为地去管水，而是要顺其自然、因势利导，这正好契合了道家的无为而无不为的思想。     

Defect Structures in 4H-SiC Irradiated with Highly-energetic ^20Ne^4＋ and ^120Xe^26＋ Ions

The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of our     

Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.     

r探测器的中子灵敏度标定技术

CeF3，YaP：Ce等无机晶体分别配光电倍增管构成的探测器，对r线有较高的探测效率，被称为r测器。由于其中子灵敏度比相同能量的r敏度要低数倍，有的甚至低一个量级，因此中子辐射源与周围环境物质作用产生的散射中子和r线将严重影响其输出电流，导致中子灵敏度的标定难以实现。