石墨烯或将用来制造太阳能电池

正石墨烯是已知的世上最薄、最坚硬的纳米材料,它几乎是完全透明的,只吸收2.3%的光;其导热系数高达5300 W/(m·K),高于碳纳米管和金刚石,常温下其电子迁移率超过15 000 cm2/(V·s),比纳米碳管或硅晶体高,而电阻率只有约10–8·m,比铜或银更低,为世上电阻率最小的材料。因其电阻率极低,电子迁移的速度极快,因此被期待可用来发展更薄、导电速度更快的新一代电子元件或晶体管。由于石墨烯实质上     

In基二氧化碳氧化丙烷脱氢催化剂的研究

二氧化碳氧化丙烷脱氢增产丙烯是提高丙烷脱氢单程转化率与二氧化碳资源化利用的重要途经,探究高效的非贵金属环保型催化剂对工业界和科学界均有重要意义。采用不同合成方法制备了系列In基催化剂,通过X射线衍射、拉曼、H2-程序升温还原、扫描电镜观测了In活性位结构。关联活性数据得出,具有InO6结构的InOx团簇或In2O3颗粒在CO2氧化丙烷脱氢气氛中能够发生氧化还原循环,从而驱动CO2及丙烷分子的活化,而水热法合成样品中不含该InO6结构,因此不具备CO2活化能力。此外,十元环MFI型Silicalite-1沸石相比十二元环的Si-Beta沸石载体能够促进CO2的吸附,也提高了CO2对丙烷分子活化的促进作用。     

5.8～6.2GHz高效率InGaP/GaAs HBT J类功率放大器

介绍了一个工作在5.8~6.2GHz的高效率磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)功率放大器。设计了具有良好带宽性能的J类输出匹配网络,并通过InGaP/GaAs HBT单片微波集成电路(MMIC)技术和射频基板封装技术得以实现。在5.8~6.2GHz的频率范围内,用连续波(CW)信号测试放大器得到的1dB压缩点输出功率都大于31dBm,饱和输出功率都大于32dBm、最大的附加功率效率(PAE)都大于56%。     

共振隧穿型太赫兹波振荡器设计

本文设计的RTD结构,采用目前最新的发射极渐变In含量(GE)结构和集电区隔离层与势垒层之间的高In过渡层(HITL)结构,同时对发射区和集电区进行重掺杂。发射极设计面积为1μm2至几μm2的情况下,通过基于非平衡格林函数法的量子输运模拟器WinGreen模拟,将势阱厚度从4.5nm降低到4nm,峰值电流密度JP从13mA/μm2达到43mA/μm2,输出功率从235μW达到2.625mW。阵列型RTO可实现功率合成,使RTO的功率再增加一个数量级,达到毫瓦甚至几十毫瓦。同时建立包含各种寄生参数的等效电路模型,通过PSPICE工具仿真,得到振荡频率可达1.78THz的仿真结果。     

A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser

We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot （QD） lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50oC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.     

ITO作为电流扩展层的AlGaInP 发光二极管可靠性研究

Three aging experiments were performed for AlGaInP light emitting diodes（LED） with or without indium tin oxide（ITO）,which is used as a current spreading layer.It was found that the voltage of the LED with an ITO film increased at a high current stressing,while there was little change for that of the LED without the ITO.The results of the LEDs with different thicknesses of the ITO film show that the LED with a thicker ITO has a higher reliability.The main reason for the voltage increase of the LED with the ITO film might be the current crowding in the ITO film around the P-type electrode.     

应变自组装InAlAs量子点材料和红光量子点激光器

通过提高量子点材料的质量和优化量子点激光器材料的结构 ,研制出高质量的应变自组装 In Al As/Al Ga As/Ga As量子点材料和低温连续激射的红光量子点激光器。器件性能达到国际同类研究的最好水平     

Thermodynamics of Solvent Extraction of Rare and Scattered Metal-Indium with Diethylhexylmonothiophosphoric Acid

IntroductionIndium has been widely used in electronic indus-try,butin nature itcoexists with other metals instead ofexisting as a single mine.Among all the methods avail-able,extraction is the most effective one for abstractingindium.However,it is challen…     

涂钼石墨管石墨炉原子吸收法测定镓,铟和铊热蒸发行为的探讨

本文从热力学和化学动力学的角度对消除干扰及提高吸收灵敏度的机理进行了探讨，认为在涂钼石墨管中，镓，铟和铊主要以Ｇａ２Ｏ，Ｔｌ２Ｏ和ＩｎＯｘ形式与ＭｏＯ３形成稳定的烧结物，使初始挥发温度大大提高，减少了干燥，灰化前处理过程被测物的分子挥发逸失，由于钼元素参与镓，铟和铊的原子化反应，从而改变了原子化，提高了原子化效率。