大口径铜蒸气激光“黑心”的优化消除

应用遗传算法,以激光束径向光强无“黑心”的最大输出功率为目标函数,整体优化设计了百瓦量级铜蒸气激光系统的激光头以及放电电路.脉冲放电电场的趋肤效应导致“黑心”, 但可通过选择合适的激光管半径、长度以及LC电路参数等,来消除或改善“黑心”现象.同 时,激光功率也可大幅度提高. 关键词： 铜蒸气激光 黑心 遗传算法 优化     

为什么水在金属表面的吸附构型是倾斜的——水在铜、铝表面吸附的量子化学计算

用量子化学从头算方法,分别以原子簇Ｃｕ５、Ａｌ４、Ａｌ１０模拟Ｃｕ（１００）和Ａｌ（１１１）表面,在不同基组水平上,计算了水在两种金属表面上倾斜吸附的热能面,结果表明：当计算基组中不含氧原子的ｄ轨道时,得到水分子在金属垂直吸附的构型,这与实验结果不符;当水中氧原子加极化函数时,水分子倾斜吸附时能量较低,得到与实验相符的吸附构型。这说明水中氧原子ｄ轨道在计算中起着关键作用,在成键过程中有着重要影响。     

胆红素铬合物的表面增强拉曼光谱研究

本文通过对近红外激发傅里叶变换拉曼光谱（ＮＩＲ－ＦＴ－Ｒａｍａｎ）与表面增强拉曼散射（Ｓｕｒｆａｃｅ Ｅｎｈａｎｃｅｄ Ｒａｍａｎ Ｓｃａｔｔｅｒｉｎｇ,ＳＥＲＳ）技术的联用,没得胆红素及其络合物Ｎａ２ＢＲ,ＣａＢＲ与ＣｕＢＲ在银溶胶中的ＳＥＲＳ光谱。结果表明,这一类与胆结石密切相关的生物分子络合物具有不同的配位方式,且在银胶表面采取不同的吸附取向,并从配位化学角度初步解释了黑色结石的黑色成因。     

火焰原子吸收法测定氧化钼中铜、铅

本文介绍了用火焰原子吸收法测定氧化钼中铜、铅的方法,确定了两种元素最佳仪器工作条件,该方法快速、简便、准确,对试样的回收为９８．８－１０２％,样品测定的相对偏差小于１％,对实际样品了测定获得满意结果。     

铜铟镓硒(CIGS)光伏薄膜的磁控溅射及组成调控研究进展

铜铟镓硒(Cu(In_xGa_(1–x))Se_2,CIGS)薄膜是目前备受关注的一种太阳能电池材料,磁控溅射是其重要的制备方法。本文从溅射工艺(衬底温度、溅射功率、工作气压)和组成调控(硒含量、Ga梯度)两个方面简述了关于磁控溅射CIGS薄膜的研究进展(尤其是对其光伏性能的调控),提出了提高CIGS薄膜电池光电转换效率的建议及研究方向。     

自悬浮定向流法制备纳米铜微粒及其结构表征

采用自悬浮定向流法制备金属铜纳米微粒,并用TEM,XRD和AES等分析手段研究了铜纳米微粒的形貌、粒度、结构及其表面氧化层特性。结果表明,在一定的参数条件下采用自悬浮定向流法可制备出单晶纳米铜微粒,并且通过工艺参数的调控可达到对微粒粒度的控制。     

火焰原子吸收光谱法测定饲料级硫酸盐中的铜

建立了火焰原子吸收光谱法测定饲料级硫酸盐中铜的方法,讨论了共存离子的干扰情况.在最佳实验条件下,该方法测定铜的特征浓度为0.019μg/mL,相对标准偏差为0.24％,样品加标回收率为99.2％-105.6％.被分析的饲料级硫酸盐中的共存离子对铜的测定基本无干扰.方法简便、快速,具有较高的准确度和精密度,适合用于饲料级硫酸盐中微量铜的测定.     

异戊醇萃取-原子荧光光谱法间接测定中草药中铜含量

提出了一种原子荧光光谱法间接测定中草药中铜含量的方法。在弱酸性介质中,CuI与HgI42-反应生成稳定的Cu2HgI4,经异戊醇萃取分离后,通过用原子荧光光谱法测定有机相中剩余的汞量,间接换算成铜含量。铜的质量浓度在0.01～0.1mg.L-1范围内与荧光强度呈线性关系,方法的检出限(3S/N)为3.5μg.L-1。方法用于国家标准物质黄芪(GSB-19)、茶叶(GSB-7)和柑橘叶(GSB-11)的分析,测定值与认定值相符,测定值的相对标准偏差(n=9)在0.8%～2.4%之间。     

Photoluminescence and thermoluminescence properties of SnO2 nanoparticles embedded in Li20-K20-B203 with Cu-doping

Cu-doped borate glass co-doped with SnO2 nanoparticles is fabricated by melt quenching. The structure and morphology of the samples are examined by X-ray diffraction and field emission scanning electron microscopy. Up-conversion enhancement is observed in the photoluminescence （PL） and thermolumines- cence （TL） intensities of the glass. PL emission spectra are identified in the blue and green regions, and a fourfold increase in emission intensity may be observed in the presence of embedded SnO2 nanoparticles. The glow curve is recorded at 215℃, and fourfold increases in TL intensity are obtained by addition of 0.1 mol% SnO2 nanoparticles to the glass. Higher TL responses of the samples are observed in the energy range of 15-100 KeV. At energy levels greater than -0.1 MeV, however, flat responses are obtained. The activation energy and frequency factor of the second-order kinetic reaction are calculated by the peak shape method.     

An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.