New BCN Fibres for Strong Ultraviolet and Visible Light Luminescence

Novel B3CN3 fibres with a special structure have been synthesized by a pyrolysis process. High-resolution TEM analysis shows that the as-prepared B3CN3 fibres can be described as a nanofibre-interweaved network. Strong photoluminescence at 370 nm and 700 nm from the as-prepared B3 CN3 fibres are observed at room temperature, which suggests that B3 CN3 is a promising ultraviolet- and visible-light-emitting material.     

自集成透镜InGaAsP／InPDHLED及其离子束铣技术

本文报道在国内首次采用离子束铣技术研制自集成透镜InGaAsP/InP DH LED的实验结果。采用烘烤正性光致抗蚀剂来形成球状掩膜适合于离子束铣,且重复性很好。为了获得光洁的刻蚀表面,刻蚀条件均已最优化。     

半导体发光器件技术现状及其产业发展趋势

本文根据最新资料，综述了上前国内外半导体发光器件的现状和发展趋势，并对我国应如何发展光电器件提出建议。     

Opto公司推出彩色有机发光二极管（OLED）器件OFGP 020384160F

Opto技术公司日前推出一种彩色有机发光二极管(O L E D)O F G P020384160F,该显示器件能丰富手提设备的显示。它的对角线长度为2.9英,分辨率为160×160,能工作高达10000小时。该显示器能提供多达262000个色彩,支持视频格式,帧速率高达120fps。这种小分子OLED屏的有用面积52.790×52.774mm,屏的尺寸为本70×70×1.4mm,象素大小为0.06×0.28mm,象素间隔为0.11×0.33mm,总的象素为160×3×160。它具有64级灰度,显示器工作电压2￣10V,逻辑电平从3.3￣5V,工作温度从-20°到70℃。该OLED显示器的视角度为160度,有清晰和与众不同的图像,即…     

脂溶性酞菁钴(III)为载体的高选择性亚硝酸根PVC膜电极

以自制的4,4',4',4''-四特丁基酞菁钴(II)为原料合成二氯4,4',4',4''-四特丁基酞菁钴(III)。以此为载体制备PVC膜电极。该电极的电位选择性次序明显不同于Hofmeister次序, 其最佳 响应斜率为-52mV/pNO2^-, 线性范围为3×10^-^5～1×10^-^1mol.dm^-^3NaNO2。通过改变配合物轴向的配位阴离子, 用紫外-可见光谱法对电极的响应机理作了初步探讨。     

具有新光学性质的Zn-Zn2SiO4纳米同轴线阵列

采用气相沉积技术在Si衬底上生长了Zn-Zn₂SiO₄芯-壳结构纳米同轴线阵列。根部呈笋状的纳米同轴线,直径约100nm,长度可以超过10μm;同轴线芯直径约50nm、壳层厚约25nm。通过X射线衍射的表征以及能量色散谱的线扫描,确定纳米同轴线的芯为Zn,壳层为Zn₂SiO₄。我们提出了一种新的生长机制,同时也为生长均匀的纳米同轴线提供一种新的技术。观察阴极荧光谱发现,纳米同轴线有三个主要发光带:强度最大的中紫外300nm发光、较弱的可见光区560nm以及红外谱区865nm的发光。对纳米同轴线截面的300nm发光峰观测发现,中紫外发光来源于Zn₂SiO₄壳层。正是这种同轴线的结构,使得其具备特殊的光学性质。     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

德国欧司朗新世代光源袭卷照明市场

德国欧司朗光电半导体（OSRAMOptoSemi．conductorsGmbH）公司开发出了1个封装可发出1000 1m以上光通量的白色发光二极管（LED）“OSTARLighting”。作为封装发出的光通量，这一数值为业界最大，比耗电量50W级的卤素灯更亮．可用作普通照明器具等，用途广泛。     

紫外写入光纤光栅用特种光纤的研究

本文详细地介绍了如何加强用于制做紫外写入光纤光栅所需的特种光纤的高光敏性、温度不敏感性以及对包层模的高度抑制性等。