分子束外延低温生长GaAs缓冲层及性能研究

用国产分子束外延设备(Ⅳ型),在低温(200—300℃)下生长了GaAs,AlGaAs和GaAs-AlGAs超晶格。本文着重提出对在低温生长GaAs缓冲层上生长优质GaAs有源层,尤其对缺陷和杂质很敏感的高电子迁移率晶体管结构材料进行研究。     

InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应

本文利用光电流谱方法研究了10—300K温度范围内In_(0.2)Ga_(0.8)As/GaAs应变层短周期超晶格的Wannier-Stark效应,在室温及低温下均观察到明显的吸收边场致“蓝移”现象,并对Stark-ladder激子跃迁的能量位置及振子强度随电场的变化给予详细讨论。实验结果表明,利用In_(0.2)Ga_(0.8)As/GaAs应变层超晶格的Wannier-Stark效应可以制作0.98μm波长范围的电光调制器和自电光双稳器件。     

单层光学薄膜中薄膜－衬底体系的双重干涉效应及其应用

提出了单层光学薄膜中薄膜与衬底反射光之间的双重干涉效应的理论，实验结果证实了理论分析的正确性。双重干涉效应使薄膜－衬底体系的热致反射调制度高达８０％，这一效应可望有极广泛的应用     

超导／半导兼容材料的制作及性能分析

介绍了几种结构合理的超导／半导兼容材料的制作技术及其测试结果，重点讨论了超导体（ＹＢＣＯ）与半导体（Ｓｉ，ＣａＡｓ）间缓冲层的选取，并对这几种复合材料的性能作了较详细的分析。     

薄膜多层微光专用混合集成电路的研制

本文简略地介绍了采用埋置电阻型薄膜多层工艺技术研制的微光专用混合集成电路的电路原理，设计思想，以及电路性能，着重阐述了多层工艺中出现的问题及解决的方法。     

Preparation of Nanoelectrode Ensembles by Assembly of Nano—Silver Colloid on Gold Surface

A novel method for preparing silver nanoelectrode ensembles(SNEEs) and gold nanoelectrode ensembles (GNEEs) has been developed. Silver colloid particles were first absorbed to the gold electrode surface to form a monolayer silver colloid. N-hexadecyl nercaptan was then assembled on the electrode to form a thoil monolayer on which hydrophilic ions cannot be transfered. The SNEEs was prepared by removing thiol from silver colloid surface through applying and AC voltage with increasing frequency at 0.20V(vs.SCE). Finally,GNEEs was obtained by immersing a SNEEs into 6 mol/L HNO3 to remove the silver colloid particles. By comparison with other methods such as template method ect., this method enjoys some advantages of lower resistance, same diameter,easy preparation,controllable size and density.