含氟碳菁染料聚集行为的研究

本文对五种不同结构的含氟碳菁染料的甲醇溶液及吸附在碘溴化银T 颗粒表面的聚集行为进行了研究 ,测定了照相性能 ,计算了增感倍率。Dye1 ,Dye2 ,Dye3在甲醇溶液中测得的单分子态吸收曲线 ,当取代基从C2 H5→CH3→无取代基时 ,最大吸收峰对应的波长向短波方向移动 ;乙基取代基的增感染料 (Dye1 )吸附在碘溴化银表面形成的J 聚集态峰值较高 ,对应的增感倍率也高。没有取代基的增感染料 (Dye3)不形成J 聚集 ,增感倍率低 ,有减感作用。Dye4与Dye5相比 ,Dye4具有尖而窄的J 聚集反射光谱 ,增感倍率高。结果表明 :不同结构的增感染料吸附在卤化银颗粒上形成的J 聚集态不同 ,吸收谱带窄的J 聚集态增感染料具有较高的增感倍率。     

激光诱导间质肿瘤热疗的数值模拟和实验研究

本文在考虑生物组织物性动态变化的情况下建立了激光诱导间质肿瘤热疗(LITT)的物理数学模型,采用MonteCarlo方法数值模拟了LITT中激光能量在生物组织内的传输过程,基于Pennes生物传热方程和Arrhenius方程数值求解了组织内的温度分布和热损伤体积的变化,分析了热物性及血液灌注率的动态变化对LITT过程的影响,并与相应的离体实验结果进行了对比。数值模拟结果表明,组织的热物性及血液灌注率的动态变化对于热损伤体积的变化具有重要的影响。因此在激光诱导间质肿瘤热疗的数值模拟中应该考虑热物性及血液灌注率的动态变化以期为临床治疗方案的制定提供更为准确的依据。     

Fabrication of Zeolite A Rods with Irregular Macropores by Self-assembly of Zeolite A Microcrystals Using Microwave-assisted Hydrothermal Synthesis

Zeolite A rods by self-assembly of zeolite A microcrystal were successfully synthesized by microwave-assisted hydrotherrnal synthesis. The average size of zeolite crystals consisting of self-assembling materials was about 300 nm and the length of zeolite rods was in the range of 15--30μm.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

利用“热”标准芯片评价集成电路的热性能

本研究研制出了符合国情的“热”标准芯片Ｓ、Ｍ、Ｌ三种规格，研制出了壳温变化小于０．５℃，相对误差小于２．３１％的恒定壳温电学法ＩＣ热阻测试系统，获得了２４种常用外壳和多种封装工艺热阻典型值及离散性，定量分析了同种样品，不同厂家封装的热阻差别；芯片面积对热阻的影响；粘片工艺对热阻的影响；背面金属化对热阻的影响。本研究还进行了实际电路与标准芯片稳态热阻比较，电学法与红外法热阻比较，说明研究成果有很好的     

红外热像在混合集成电路热性能分析中的应用

本文介绍了红外热像法测温的基本原理及测量方法，说明了红外像在混合集成电路热性能分析的应用范围，并给出了应用实例，同时指出了红外热像法应用的前景和局限性。     

神经网络法计算镉（Ⅱ）,羟基及碳酸根三元体系的形态分布

采用前馈线笥网络ＢＰ算法，计算了Ｃｄ６２＋－ＯＨ＾－ＣＯ＾２－３三元体系的累积稳定常数。用Ｈｏｐｆｉｅｌｄ反馈网络研究了体系中络合物的形态分布。溶液中溶解的ＣＯ２对ｌｇβ１的计算结果有重要影响，对ｌｇβ２，ｌｇβ３，ｌｇβ４的结果影响不大。     

复合栅控二极管新技术提取热载流子诱生的NMOS/SOI器件界面陷阱的横向分布

提出了用复合栅控二极管新技术提取MOS/SOI器件界面陷阱沿沟道横向分布的原理,给出了具体的测试步骤和方法.在此基础上,对具有体接触的NMOS/SOI器件进行了具体的测试和分析,给出了不同的累积应力时间下的界面陷阱沿沟道方向的横向分布.结果表明:随累积应力时间的增加,不仅漏端边界的界面陷阱峰值上升,而且沿沟道方向,界面陷阱从漏端不断向源端增生.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.