Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

By using n-butylamine as a carbon resource,carbon film is deposited on the p-n porous silicon (PS) surface with a radio-frequency glow discharge plasma system.Raman spectra and infrared reflection (IR) spectra of the carbon films indicate that there are amine-group and hydrogen atoms therein.The IR spectra of the passivated PS samples exhibit that the PS surfaces are mainly covered with Si-C,Si-N and Si-O bonds.Electroluminescence (EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of the EL peak occurs compared with the diodes without treatment.Both of these are stable while the passivated diodes are exposed to the air indoors.The I-V characteristics reveal that the passivated diodes have a smaller series resistance and a lower onset voltage.The influence of the carbon film passivation on EL properties of PS has also been discussed.The results have proven that carbon film passivation is a good way to enhance the PS luminescent intensity and stability.     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

类锂硅离子软X射线激光研究

在激光等离子体典型参数条件下，利用碰撞－辐模型计算了类锂硅离子５ｆ－３ｄ和４ｆ－３ｄ跃的粒子数反转比率和激光增益系数。讨论了不同热带条件和不同冷却速度下，激光增益系统数的变化。计算结果表明，高功率，短脉冲激光生产的高温等离子体在快速冷却条件下能产生软Ｘ射的线激光增益。     

多孔硅制备过程中B,P杂质原子的作用

采用DV-Xα方法对多孔硅形成过程中位于表层的B和P杂质原子的作用进行研究,结果表明位于顶层硅原子层中的B和P杂质原子均可削弱其邻近的Si-Si键强度,因而可能导致出现腐蚀的突破点,再通过分析杂质对表面区势场的改变,可以认为位于顶层硅原子层中的B杂质原子产生腐蚀的突破点的可能性更大。 关键词：     

过共晶Al－Si合金共生区激光表面处理

用２ｋＷ连续ＣＯ２激光对过共晶Ａｌ－１８Ｓｉ合金以不同能量密度和扫描速度进行快速熔凝处理。用扫描电镜、电子微区分析仪分析了微观结构。从计算机对Ａｌ－Ｓｉ合金ｆ－ｎｆ系统的非平衡理论计算所得的共生区及实验结果的分析可见，当能量密度和扫描速度决定的凝固条件处于共生区中部时，过共晶Ａｌ－Ｓｉ合金激光表面处理可以得到共晶间距低于２００ｎｍ的完全共晶结构。     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

硅 SIMOX 单模脊形光波导研制

本文描述硅光波导技术的重大突破：（１）用ＳＩＭＯＸ技术代替传统的硅外延型光波导，解决了衬底吸收光波．从而显著改善了光波导的传播损耗．（２）在理论及实验上均已解决用调整脊形的高宽比（高宽均能达１０微米左右），制取单模脊形光波导．这种光波导的下覆盖层是ＳｉＯ２，传播损耗小；断面积大，和单模光纤耦合良好．满足了光集成技术中对光波导的几项重要要求．