有机发光显示技术的进展

有机发光显示被认为是下一代最理想的显示技术,具有自主发光、功耗小、视角宽、成本低和响应速度快等优点。本文在简述有机电致发光器件的电极结构和发光材料的基础上,重点介绍了有机显示器件的驱动技术和面板的研发成果,并展望未来发展的前景。     

MEMS固态风速风向传感器的设计与制作

风速风向参数的测量在气象测量中占有重要的地位。基于MEMS技术的固态风速风向传感器具有体积小、重量轻、成本低的优点。设计了两种基于MEMS工艺的固态测风传感器，即硅薄膜式测风传感器和硅悬梁式测风传感器，用流体力学原理对这两种风速风向传感器进行了理论分析及ANSYS CFD软件模拟仿真，得出了风速与挠度、剪切力的关系。用惠斯通电桥测量传感器输出信号，通过单个传感器的二次封装测量风向信号。制作出了硅悬梁式测风传感器，并进行了初步测试。     

45nm工艺与关键技术

介绍了45 nm芯片所采用的关键工艺技术:193 nm ArF干法/浸没式光刻技术、低k电介质技术、高k电介质技术和应变硅技术等。英特尔45 nm全功能153 MB SRAM芯片与65 nm芯片相比,晶体管密度提高了2倍,晶体管开关速度提高20%以上,晶体管漏电流降低到65 nm芯片的1/5,存储单元面积为0.346μm2。指出英特尔45 nm芯片MPU将在2007年下半年实现量产,并且继英特尔之后,TI、IBM、特许、英飞凌、三星、台积电和台联电等均已推出了45 nm芯片,说明45 nm芯片技术正在日益走向成熟。     

从屏幕背光应用看LED驱动技术发展

提到LED驱动,大家会想到什么?小到手机的屏幕背光、键盘背光、闪光灯或者电筒灯(手机上照明用的),LED照明,大到LCDTV背光等等.对于屏幕背光而言,屏幕大小不同就需要不同数目的LED,例如,3英寸屏幕一般需要的背光LED数量是2个～4个.屏幕要达到显示的亮度均衡就要让这些不同数量的LED保证发光一致,而LED的发光亮度是与其驱动电流相关,因此,LED驱动需要保证流经LED的电流一致.     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.     

喷雾热解法制备的SrWO4膜的阴极射线发光

利用超声喷雾热解法制备了钨酸锶SrWO₄多晶发光膜,并研究了制备条件及掺杂对其阴极射线发光特性的影响.生成的发光膜在300℃以上退火后具有白钨矿结构,其阴极射线发光为一宽带的蓝光,包括一个位于448nm的蓝色发光带和一个位于488.6nm的蓝绿色发光带,是由阴离子络合物WO₄^2-的电荷转移跃迁引起的.发光强度随着退火温度的升高而增强,而退火气氛对其影响不大.在SrWO₄膜中掺入银离子Ag⁺和镧离子La³⁺后,不影响其发光特性,但铕离子Eu³⁺的掺入对发光特性有影响.     

Electronic Structure of Si1-xⅣx/Si Superlattices on Si （001）

We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xⅣx/Si （x = 0.125, 0.25, 0.5, Ⅳ=Ge, Sn） superlattices （SLs） grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875Ge0.125/Si, Si0.75Ge0.25/Si and Si0.875Sn0.125/Si are the F-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xⅣx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.     

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.     

Synthesis and characterization of Ca2Sn1-xCexO4 with blue luminescence originating from Ce^4＋ charge transfer transition

Ce^4＋-doped Ca2SnO4 with a one-dimensional structure, which emits bright blue light, is prepared by using a solid-state reaction method. The x-ray diffraction results show that the Ce^4＋ ions doped in Ca2SnO4 occupy the Sn^4＋ sites. The excitation and emission spectra of Ca2Sn1-xCexO4 appear to have broad bands with peaks at - 268nm and -442nm, respectively. A long excited-state lifetime （-83μs） for the emission from Ca2Sn1-xCexO4 suggests that the luminescence originates from a ligand-to-metal Ce^4＋ charge transfer （CT）. The luminescent properties of Ca2Snl_xCexO4 have been compared with those of Sr2CeO4, which is the only material reported so far to show Ce^4＋ CT luminescence. More interestingly, it is observed that the emission intensity of Ca2Sn1-xCexO4 with a small doping concentration （x - 0.03） is comparable to that of Sr2CeO4 in which the concentration of active centre is 100%.     

Tm3+/Yb3+共掺氧卤碲酸盐玻璃上转换发光研究

研究了Tm3+/Yb3+共掺氧卤碲酸盐玻璃的上转换发光光谱,分析了TmO3量对Tm3+/Yb3+共掺氧卤碲酸盐玻璃上转换发光的影响机理.结果表明:在Tm3+/Yb3+共掺氧卤碲酸盐玻璃的上转换发光中,Tm3+存在较强的浓度猝灭效应.随Tm2O3含量增加,Tm3+的上转换蓝光和红光强度先增加,后降低,在0.1 mol% Tm2O3达到最大.该结果有助于进一步提高Tm3+的上转换发光效率.