Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

用激光从硅表面剥离氢原子

美国一研究小组实现了科学家们长期以来的目标：利用激光破坏某些分子的化学键。他们利用激光代替加热的方法将氢原子从硅表面剥离开来，这是计算机芯片和太阳能电池制造过程中的一个关键步骤。     

硅尖阵列-敏感薄膜复合型阴极真空微电子压力传感器特性的测试

封装、测试了硅尖阵列-敏感薄膜复合型阴极的真空微电子压力传感器，在计算机模拟计算的基础上，对封装好的真空微电子压力传感器进行了实物测试，得出实物测试场发射电流曲线（开启电压低，发射电流曲线与计算机模拟曲线一样，电压45V时发射电流可达到86mA，平均每个硅尖为21μA）、压力特性曲线（呈线性变化，与计算机模拟计算的曲线相近）及灵敏度数据。电压1.5V即可测试并且其压力特性成线性变化，灵敏度为0.3μA/kPa。     

用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

提出在单片微波集成电路(MMIC)中用多孔硅/氧化多孔硅厚膜作微波无源器件的低损耗介质膜.研究了厚度为70μm的多孔硅/氧化多孔硅厚膜在低阻硅衬底上的形成,这层厚膜增加了衬底的电阻率,减少了微波的有效介质损耗.通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线(CPW)的微波特性.     

三缺位杂多阴离子PW_9(O_(34))~(9-) 的二苯基硅衍生物的合成和表征

以Na8 H[PW9O3 4 ]·nH2 O与Ph2 SiCl2 为原料于乙腈中合成了三缺位杂多阴离子的二苯基硅衍生物(TBA)3[α-A -PW9O3 4 (Ph2 Si)3 ](TBA为四丁基铵盐的缩写)(记为I),并由元素分析、红外光谱、紫外光谱对化合物进行了表征,结果表明,二苯基硅通过六个Si-O -W桥键填充到三缺位杂多阴离子的骨架上,形成了开环的饱和笼形结构.热分析结果表明,该化合物的热分解温度在 4 95.2℃左右     

Tesla变压器型电子束加速器初步实验

 介绍了一种Tesla变压器型的强流电子束加速器。当变压器初级输入20kV左右的电压时，加速器二极管输出电压500kV，电流9kA，信号脉宽大约50ns，该装置具有结构简单，安装方便，运行可靠等特点。     

阴极还原处理对多孔硅发光性能的影响

对经过阴极还原处理后的多孔硅样片进行了光致发光测试和稳定性测试.实验结果表明这种处理能明显改善多孔硅的发光稳定性,使其表面结构更加稳定.利用原子力显微镜对不同还原时间的多孔硅微结构及形貌进行了比较,在一定范围内随着还原时间的增长多孔硅表面粗糙度增大,PL谱增强.     

Characteristics of Nd：GdVO4 Laser with Different Nd-Doping Concentrations

We report the properties of a compact diode-pumped continuous-wave Nd：GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd：GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd：GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser.     

硅玛科技手机滑盖采用VICTREX VICOTE涂科

2008年06月11日，英国威格斯公司（Victrex plc）宣布基于VICTREX PEEK聚合材料的VICOTE涂料已获得手机零件制造商硅玛科技股份有限公司（Simula Tech）采用，应用于一般手机、PDA手机与智能手机的滑盖内构部件上。VICOTE涂料所具有的优异耐磨性、