A NOVEL METHOD FOR FABRICATING COMPOSITE MOSAIC MEMBRANE WITH UNIQUE NF SELECTIVITY

A novel method of fabricating composite mosaic membranes was studied on the basis of interracial polymerization （IP） by coating a thin selective layer onto the surface of a micro-porous hollow-fiber membrane, in which, 2,5-diaminobenzene sulfonic acid was used as one monomer of the IP reaction, and a mixture of trimesoyl chloride （TMCI） and 4-（chloromethyl） benzoyl chloride as the other monomer. Through the IP reaction a thin selective layer with negatively charged groups could be first formed on the polyethersulfone （PES） support membrane. Then trimethylamine solution was introduced to modify the IP layer through a quaternization reaction. Thus the selective layer of this composite membrane contained both negatively charged and positively charged groups to perform the mosaic functionality. Characterization of the composite mosaic membranes was carried out through permeation experiments using different inorganic salts and dyes. The experimental results showed that the membranes could permeate both mono- and bi-valent inorganic salts, but reject larger organic molecules. Such a mosaic membrane is potentially useful for the separation of salts from water-soluble organics, especially in dye and textile industries.     

中科院完成返回式卫星搭载实验

近日，中科院物理所和金属所合作，共同参与搭载我国第22颗返回式卫星进行空间微重力实验。在空间微重力环境下，观察了银基合金和半导体化合物熔滴形貌变化、液／固界面的润湿过程及熔滴凝固前后接触角的差异，研究了液／固界面反应及特性表征，并成功地完成了近距离摄像机、有视窗加热炉等硬件的研制，取得了预定结果。     

最有效的相容剂是两嵌段还是多嵌段聚合物？

采用Monte Carlo模拟方法研究了多嵌段聚合物在A／B／嵌段聚合物三组份体系作为相容剂使用的有效性．占总体积19％的A组份在体系中为分散相．模拟结果显示了两嵌段和多嵌段聚合物在界面上的聚集行为,以及如何影响这个不相容体系的相形为．两嵌段聚合物趋于直立在相界面上,而多嵌段聚合物更容易横跨在相界面上并占据较大的界面积．从而导致多嵌段聚合物更有效的阻止体系相分离的发生．     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

化合物半导体-绝缘体界面的界面态(续)

 三、界面态连续体的动态响应和分布多年来的大量研究结果表明把界面态处理为局域在半导体界面平面处的经典理论完全不能够解释化合物半导体-绝缘体界面的行为特点,从而使人们逐渐认识到界面态的空间分布特征.图3为半导体界面的能带结构示意图.在实际的I-S界面上,界面态是在绝缘体-半导体界面附近,在能量上和空间上的连续分布体(如图中点所示). 这里以n型半导体为例,通过绝缘体中的界面态对电子的捕获和发射过程说明界面态动态响应的特点.由于势垒△Ec的存在,空间分布的界面态与电子的作用只能依介量子力学的隧道效应得以进行.     

HCl氧化物MOS结构质子辐照诱导的界面陷阱效应

用微分电容法研究质子辐照HCl氧化物铝栅MOS结构诱导的界面陷阱,栅氧化层在1 160℃很干燥的、含0～10％HCl的气氛中热生长而成,质子辐照能量为120～300keV,注入总剂量范围为8×10~(13)～1×10~(16)p/cm~2。结果表明,辐照诱导的界面陷阱能级密度随质子能量、剂量增加而增加。然而,氧化层中掺入6％HCl时,辐照诱导的界面陷阱明显减少。这样,已能有效地改变MOS器件的抗辐照性能。实验结果可用H~+二级过程解释。     

电沉积n—CdSe在多硫溶液界面上的电荷转移机理

通过测定平带电位,澄清了OH~-离子在CdSe电极上的吸附情况,发现在S、S~(2-)、OH~-溶液中S~(2-)离子优先吸附,结合旋转环盘电极测量,证明n-CdSe电极在多硫溶液界面上的电荷转移过程。     

In Situ Observation of Skeletal Shape Transition during BaB2O4 Crystal Growth in High-Temperature Solution

The transition from a fiat solid-liquid interface to a skeletal shape during BaB2O4 （BBO） single crystal growth in Li2B4O7 flux is observed in real time by an optical high-temperature in-situ observation system. The movement of crystal step is also investigated. The observation results demonstrate that the steps propagate along and parallel to the fiat interface when the crystal size is small. Nevertheless, they will ‘bend＇ close to the face centre if the crystal size becomes greater. Atomic force microscopy reveals that more deposition places near the face centre give rise to the bending of advancing steps and thus the formation of a vicinal interface structure. Measurements of step velocity show that the velocity keeps nearly constant at different moments for one specific step, whereas the step on a newly formed layer advanced faster than that on a previously formed one when the crystal size is larger than 210μm or so. Thus interracial morphological instability occurs and a skeletal interface is obtained.     

Mo／Si多层膜界面离子束处理及TEM观察

Ｍｏ／Ｓｉ多层膜界面离子束处理及ＴＥＭ观察薛钰芝Ｒ．Ｓｃｈｌａｔｍａｎｎ，林纪宁Ａ．Ｋｅｐｐｅｌ，Ｊ．Ｖｅｒｈｏｅｖｅｎ（大连铁道学院，大连１１６０２２）（荷兰ＦＯＭ原子分子物理研究所）软Ｘ射线多层膜（ＭｕｌｔｉｌａｙｅｒｓｆｏｒＳｏｆｔＸ－ｒａｙＯ...