1.2 MV大功率直流高压电源研制

 采用等边三角形结构的铁芯,次级线圈分成40级,分别进行三相全波整流,每级输出直流30 kV,串联后获得1.2 MV/A的直流高电压大功率输出。电源的能量转换效率大于95%,漏抗高达21.7%。采用无滤波电容结构,次级线圈星型/三角型接法交替使用,纹波系数小于±4%。整个电源密封在压力钢筒中,充0.8 MPa高纯度SF6气体作为绝缘介质,最大工作场强小于130 kV/cm。设计了专门的SF6气体冷却系统,气体温度控制在60 ℃以内,高电压由充气同轴传输线输出。在小负载条件下,电源各项指标满足技术要求,已经安装在1.2 MW,1.2 MeV大功率直流电子加速器上进行整机联调。     

GaN FP-HEMTs中击穿电压与电流崩塌的关系

研究了钝化在抑制电流崩塌的同时，会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V，表明了场板对提高击穿电压有显著作用(3倍以上).接着，比较了FP-HEMT器件与常规HEMT器件，钝化后HEMT器件在应力前后的电流崩塌程度，得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明，采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾. 关键词： GaN 场板 击穿电压 电流崩塌     

A Compact Magnetically Insulated Line Oscillator with New-Type Beam Dump

We present a compact improved model of the magnetically insulated line oscillator with new-type beam dump and other novel features. In the experiments, high-power microwave of the TM01 mode is generated from the device with a frequency range of 1.73-1.78 GHz and a peak power level of above 2 GW, when the diode voltage is taken in the range 520-540kV, and the diode current is in the range 58-62kA. This confirms the simulation results.     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Magnetic Tunnel Junctions with MgO／Al-O Composite Barriers

Magnetic tunnel junctions (MTJs) with structures of Ta(5 nm)/Cu(30nm)/Ta(5 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (12 nm)/Co62Fe20B18 (4 nm)/MgO(d)/Al(0.8 nm)-oxide/Co62Fe20B18 (6 nm)/Cu(30 nm)/Ta(5 nm) on a thermally oxidized Si wafer substrate were fabricated by magnetron sputtering and photolithographic patterning method. The tunnel magnetoresistance (TMR) and the bias dependence of TMR at room temperature for the MTJs with different thickness d of MgO are investigated. TMR values of over 50% as high as those of the MTJs with pure Al-O barrier and the TMR-voltage curve asymmetries, which vary with the increase of d, are observed in the MTJs with hybrid barriers after annealing at 265℃ for an hour. The dependences of TMR, resistance and coercivity of the MTJs with composite barriers on temperature are also investigated.     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

Striations in Plasma Display Panel

The phenomenon of striation has been investigated experimentally in a macroscopic ac-plasma display panel （PDP）. The relationship between the characteristics of striation and the operation conditions including voltage, frequency, rib, and electrode configuration, etc is obtained experimentally. The origin of the striations is considered to be the ionization waves in the transient positive column near the dielectric surface in the anode area during the discharge, and the perturbation is caused by resonance kinetic effects in inert gas.     

无箔二极管电流电压关系研究

本文给出了无箔二极管物理特性的数值模拟研究结果。研究得到了二极管电流与二极管结构参数、二极管电压以及外加磁场强度等参数的变化关系特性，并且应用这些关系特性得到了在外加磁场强度足够大情况下二极管电流的近似表达为Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(r2/3-1)3/2，其中Ld为阴阳极间距；Rc为阴极发射端面的外半径；Rp为漂移管管壁半径；x=ln(Rp/Rc)，δr =Rp-Rc。这一表达式在大量二极管结构参数和二极管电压参数情况下与数值模拟结果在10％误差范围内相一致，能够比较准确的表达无箔二极管的电流电压关系。     

YBa2Cu3O7-δ/La0.6Pb0.4MnO3多层膜的制备及激光感生热电电压效应的研究

采用脉冲激光沉积法在倾斜LaAlO3(100)衬底上制备了(YBa2Cu3O7-δ/La0.6Pb0.4MnO)L(L为多层膜周期数)外延多层膜.X射线衍射谱显示(YBCO/LPMO)L多层膜沿c轴生长.观察到多层膜中有很大的激光感生热电电压(LITV)出现,与YBa2Cu3O7-δ(YBCO)和La0.6Pb0.4MnO3(LPMO)单层膜相比,多层膜的LITV信号有约一个数量级的增强.讨论了影响(YBCO/LPMO)L多层膜的LITV效应的因素.     

动态法测量材料的磁电效应

根据动态法测量磁电效应的基本原理,优化设计并建立了磁电效应测量系统,对其中的一些重要参数对磁电效应测量的影响进行了研究.结果表明,综合考虑测量需要,选择适当的测量参数,对于磁电效应的正确测量十分重要.适当增加线圈长度、减小线圈匝数以及减小交变磁场场强,都是提高磁电效应测量精度、减小测量误差的有效途径.