长距离管线监测系统的一种智能化过流防护方法

介绍了长距离管线监测系统的一种智能化过流防护方法，详细说明其电路设计原理及相关元件的选择，并与串联自复过流保护元件方式相比较，分析其整体性能，说明其具有响应速度快，安全可靠等特点。     

ZnS∶Zn,Pb蓝粉在低压阴极射线激发下的应用

通过对ZnS∶Zn,Pb蓝色荧光粉进行表面包覆SiO2以改善其稳定性;In2O3材料的适量混合,提高了荧光粉的导电性,降低了它的起辉电压。采用沉淀法制备荧光屏,考察了阳极电压和阳极电流对亮度以及衰减过程的影响,实验结果表明ZnS∶Zn,Pb的性能优于ZnS∶Ag,Cl和ZnS∶Zn,可适用于FED等低压显示器。     

色用缓变光纤中交叉相位调制不稳定性分析

从非线性薛定谔方程出发得到了色散缓变光纤（DDF）中交叉相位调制（XPM）不稳定增益谱。研究了增益谱随入纤功率及光纤纵向色散参量的变化关系。结果表明：反常色散区的增益谱宽比正常色散区宽，且峰值增益高：DDF中XPM不稳定增益谱宽比常规光纤的宽，二者的比值随传输距离和光纤色散参量的乘积成指数增长；DDF的反常色散区是产生调制不稳定的较好的色散介质。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

开关和多路复用器

小封装低电压开关和多路复用器推动便携式电子产品的广泛应用.随着移动电话、MP3播放器和掌上电脑（PDA）等便携式电子产品不断地要求增加功能和性能并且不断地缩小封装尺寸，要求每一种集成电路（IC）的设计都需要相应地缩小封装尺寸，同时提高其性能水平。     

电子束流品质对自由电子激光小信号增益影响的计算

对电子束有一定初始能量分散或角度分散时的自由电子激光小信号增益用较简便的方法进行了分析计算,并给出了一个渐近公式,结果与用计算机模拟解自由电子激光微分方程组得到的结果一致。     

基于射频模块MAX2740设计的高动态GPS接收机前端

基于MAX2740射频接收前端提供了从天线到数字化输入之间完备的GPS接收方案，信号通道包括了低噪声放大器（LNA）、两级下变频器、可变增益／固定增益放大器、压控振荡器（VCO）及频率合成器等。     

固态继电器为电动汽车电池监测提供便利

电动汽车常被喻作“归来的孩子”，因为这项技术在多年前进入市场后便一直沉寂，直至最近才再次活跃起来。其实，电动汽车早于1835年首次于美国出现，到1899年，纽约市接近90％的出租车都是由电力驱动。然而，当电力启动器和内燃机变得完善时，电动汽车的使用就迅速衰退。随着如今对环境保护的关注，由燃烧碳氢化合物造成的污染，加之汽油成本高升的影响，再次     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

A Compact Magnetically Insulated Line Oscillator with New-Type Beam Dump

We present a compact improved model of the magnetically insulated line oscillator with new-type beam dump and other novel features. In the experiments, high-power microwave of the TM01 mode is generated from the device with a frequency range of 1.73-1.78 GHz and a peak power level of above 2 GW, when the diode voltage is taken in the range 520-540kV, and the diode current is in the range 58-62kA. This confirms the simulation results.