深刻蚀的利器——ICP

等离子刻蚀技术作为一门较新的技术在半导体集成电路MEMS、光通讯技术及传感器制作等领域广泛应用。     

VF添加剂在电镀填孔中的应用

主要介绍VF填孔添加剂在电镀填孔中的应用,包括工作原理、流程设计、工艺参数、．电镀效果和影响填孔效果的因素。     

电气设备触点电蚀原因及保护方法

本文阐明了电气设备触点"电蚀"原因是由于触点间气体放电所致,分析了触点间气体放电过程、现象,同样也分析了"打火"原因及消除"火花"保护触点的电路和其它方法。     

熔盐法合成莫来石晶须

Using SiO₂ and Al₂O₃ as raw materials, mullite whiskers were prepared by heating at 1 200 ℃ for 4 h in potassium sulfate flux. The morphology, crystalline characteristics, compositions and growth direction of whiskers were investigated by means of XRD, SEM, EDS and TEM. The results indicate that the as-synthesized whiskers are about 4 μm in length and 0.5～1 μm in diameter, and mullite whiskers grow along c-axis direction ([001] direction). The formation of mullite whiskers is controlled by dissolution-precipitation reactions, and the salt flux method is a good way to grow mullite whiskers.     

Exothermic Supercooled Liquid-Liquid Transition in Amorphous Sulfur

Amorphous sulfur （a-S） is prepared by rapidly compressing molten sulfur to high pressure. From differential scanning calorimeter measurements, a large exothermic peak has been observed around 396K. Online wide-angled x-ray scattering spectra indicate that no crystallization occurs in the temperature range 295-453K, suggesting that the exothermal process corresponds to an amorphous-to-amorphous transition. The transition from amor- phous sulfur to liquid sulfur is further verified by the direct observation of sulfur melt at the temperature of the associated transition. This is the first time of reporting that a-S transforms to liquid sulfur directly, which has avoided a crystallization process. What is more, the transition is an exothermic and a volume expansion process.     

熔石英光学元件的损伤前驱及其抑制技术北大核心CSCD

基于抛光所引起的熔石英元件表面、亚表面所存在的损伤前驱体分布,研究了不同种类的损伤前驱体所引起的损伤形貌。然后根据不同种类的损伤前驱体分别采用表面活性剂、强氧化性酸、氢氟酸的水溶液对不同的损伤前驱体进行处理。研究结果显示:经过前期预先清洗以后,吸收性杂质所导致的雾状损伤得以消除,亚表面分布的裂纹得以很好地平滑钝化,极大地提升了熔石英光学元件的抗损伤性能,损伤阈值从4.8J/cm2提高到11.0J/cm2,最大提升幅度达到原来的2.3倍。