复合栅控二极管新技术提取热载流子诱生的NMOS/SOI器件界面陷阱的横向分布

提出了用复合栅控二极管新技术提取MOS/SOI器件界面陷阱沿沟道横向分布的原理,给出了具体的测试步骤和方法.在此基础上,对具有体接触的NMOS/SOI器件进行了具体的测试和分析,给出了不同的累积应力时间下的界面陷阱沿沟道方向的横向分布.结果表明:随累积应力时间的增加,不仅漏端边界的界面陷阱峰值上升,而且沿沟道方向,界面陷阱从漏端不断向源端增生.     

Ablation of GaN Using a Femtosecond Laser

We study the pulsed laser ablation of wurtzite gallium nitride(GaN) films grown on sapphire,using the femtosecond laser beam at a central wavelength of 800nm as the source for the high-speed ablation of GaN films.By measuring the backscattered Raman spectrum of ablated samples,the dependence of the ablation depth on laser fluence with one pulse was obtained.The threwshold laser fluence for the ablation of GaN films was determined to be about 0.25J/cm^2,Laser ablation depth increases with the increasing laser fluence until the amount of removed material is not further increased.The ablated surface was investigated by an optical surface interference profile meter.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

软X光辐射烧蚀实验方法研究

 用强激光辐照金箔靶，以金箔背侧软X光辐射为基础，提出了软X光辐射烧蚀研究的新靶型、新方法，做了C₈H₈样品辐射烧蚀初步实验。     

热漫散射贡献的高能电子衍射吸收结构因子的Doyle—Turner解析表达

给出了一种数值计算高能电子衍射吸收结构因子的方法，并利用模拟退火结合保温相变以及线性最小二乘拟合等算法，对所计算的吸收结构因子数值进行了含１０个参数的Ｄｏｙｌｅ－Ｔｕｒｎｅｒ解析表述的拟合，作为示例，给出Ｂｅ，Ａｌ，Ａｓ，Ａｇ，Ａｕ等５个元素的拟合结果和精度，并作出Ａｌ的绝对偏差量和相对偏差量曲线。     

热处理WO3电变色膜稳定性研究

采用电子束蒸发淀积ＷＯ３薄膜。根据已有的ＷＯ３薄膜脱水过程结论而选择适当温度对薄膜进行退火处理。在大量含水的和不含水的两类Ｌｉ＾＋电解质中进行比较性着色和消色循环实验，表明在２９０℃以下热退火处理能明显增加ＷＯ３薄膜在含水 电解质中的循环寿命。     

钛酸铅系薄膜的热释电性能及其应用

叙述了钛酸铅系薄膜的热释电原理，介绍了国际上近几年钛酸铅系薄膜材料、制备工艺及热释电性能，并与块状陶瓷材料进行了比较，分析表明钛酸铅系薄膜具有优良的热释电性能及可观的应用前景。     

超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。     

热壁LPCVD设备使用中几个问题的探讨

文章就热壁ＬＰＣＶＤ设备使用过程中出现的几个问题作了较全面的分析，提出了一些解决办法，并就设备易出现的故障及维护谈一点体会。