Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

InGaAs（P）分别限制应变单量子阱激光器的优化设计

针对较常用的ＩｎＧａＡｓ（Ｐ）分别限制应变单量子阱激光器，给出了为得到最大净增益的优化设计参数。对于激射波长为１．５５μｍ的无应变激光器，最佳的光限制层波长为１．２４μｍ，厚度为１００ｎｍ。当阱材料引入压缩应变后．由于价带的有效状态密度减小，量子阱激光器的微分增益变大，阱深的增大对增大线性增益的效果更加明显．所以最佳光限制层的波长将变短，为１．２０μｍ     

端面泵浦掺Yb3+双包层光纤激光器

从双包层光纤激光器的速率方程出发，得到了光纤中泵浦光与激光的功率分布、输出功率与泵浦功率的关系、腔镜反射率及光纤长度对输出功率的影响。研究结果表明：输出激光功率与光纤长度及后腔镜反射率有很强的依赖关系，存在一个输出功率最大的最佳光纤长度。后腔镜反射率越大，输出激光功率越小；当光纤长度较短时，在输出端放置反射镜使泵浦光高反射，可以提高输出功率和效率。通过对端面泵浦掺Yb3+双包层光纤激光器进行理论分析和实验研究，得到输出激光的中心波长为1088.3nm，斜率效率为33.7%，最大输出功率为1.75W。     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

多层前馈网络在图象分割中的应用

本文提出用多层前馈网络进行基于边缘信息的图象分割，讨论了学习样本的提取步骤和网络学习的速度改进方法，实验表明，用多层前馈网络进行图象分割能获得良好的结果。     

Al2O3SiO2/ZL109 金属基复合材料的强度性能研究

介绍了硅酸铝短纤维增强ＺＬ１０９铸铝合金（Ａｌ２Ｏ３ＳｉＯ２／ＺＬ１０９ＭＭＣ）的静态实验和冲击实验结果。给出了这种复合材料的静态强度、动态屈服强度和层裂强度并对实验结果进行了分析讨论。     

分子束外延低温生长GaAs缓冲层及性能研究

用国产分子束外延设备(Ⅳ型),在低温(200—300℃)下生长了GaAs,AlGaAs和GaAs-AlGAs超晶格。本文着重提出对在低温生长GaAs缓冲层上生长优质GaAs有源层,尤其对缺陷和杂质很敏感的高电子迁移率晶体管结构材料进行研究。     

InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应

本文利用光电流谱方法研究了10—300K温度范围内In_(0.2)Ga_(0.8)As/GaAs应变层短周期超晶格的Wannier-Stark效应,在室温及低温下均观察到明显的吸收边场致“蓝移”现象,并对Stark-ladder激子跃迁的能量位置及振子强度随电场的变化给予详细讨论。实验结果表明,利用In_(0.2)Ga_(0.8)As/GaAs应变层超晶格的Wannier-Stark效应可以制作0.98μm波长范围的电光调制器和自电光双稳器件。     

单层光学薄膜中薄膜－衬底体系的双重干涉效应及其应用

提出了单层光学薄膜中薄膜与衬底反射光之间的双重干涉效应的理论，实验结果证实了理论分析的正确性。双重干涉效应使薄膜－衬底体系的热致反射调制度高达８０％，这一效应可望有极广泛的应用