奇异非线性常微分方程非线性边界条件非负解的存在性

本文证明了非负解的存在性．这里（S）＝|S|P－2S，P＞1．     

ADI推出iCMOS制造工艺

日前一种全新的0.6μm iCMOS工艺为工业领域的IC电路设计提供了又一可选方案，它将高压半导体工艺与亚微米CMOS、互补双极性工艺结合，可以承受30V电压，可选的漏极扩展允许工作电压为50V。iCMOS工艺的主要特点是能使单元电路与底层之间或单元电路与单元电路之间完全隔离。这意味着通过对同一芯片施加多种电源电压，一颗单芯片能实现5V电压CMOS电路和16V、24V或30V高电压的CMOS电路混合和匹配。     

计算机总线的发展趋势

本文着重介绍世界上目前最流行的几种计算机总线的情况，以及今后的发展趋势。     

国外基础物理教学改革及教材的剖析（二）

1990年10月我曾以上述题材介绍了国际会议的动向、美国IUPP的概况、UNESCO大学基础物理改革计划、Halliday-Resnick的的基础物理学(扩展本第三版)等(刊载于《工科物理》1991.4)。现在已事隔三年，国际上基础物理教学改革的情况又如何?从下述一些情况，就可以看出全世界从事物理及物理教学工作的学、教授都十分关注这一问题。     

Frame Wavelets with Compact Supports for L^2（R^n）

The construction of frame wavelets with compact supports is a meaningful problem in wavelet analysis. In particular, it is a hard work to construct the frame wavelets with explicit analytic forms. For a given n × n real expansive matrix A, the frame-sets with respect to A are a family of sets in R^n. Based on the frame-sets, a class of high-dimensional frame wavelets with analytic forms are constructed, which can be non-bandlimited, or even compactly supported. As an application, the construction is illustrated by several examples, in which some new frame wavelets with compact supports are constructed. Moreover, since the main result of this paper is about general dilation matrices, in the examples we present a family of frame wavelets associated with some non-integer dilation matrices that is meaningful in computational geometry.     

MCS—51单片机串行口的扩展及与IBM—PC机的通信

单片机应用系统中经常要用到一个以上的串行通信接口，本文介绍８０３１单片机串行接口扩展的一种有效方法，并阐述了利用扩展的单片机串行接口实现与ＩＢＭ－ＰＣ机的远距离通信的实用方法，这些方法均在工业测控系统中得到成功应用。     

Solutions for a Mode Ⅲ Growing Crack in a Piezoelectric Plane Under Two Kinds of Electric Boundary Conditions ＊

The solutions for a mode Ⅲ crack growing along an arbitrary propagation path in a piezoelectric plane are studied under the impermeable surface condition and the electrical contact surface condition respectively. According to the two kinds of electric boundary conditions, the Hilbert and Riemann boundary value problems in a half-plane including opening smooth arc are obtained from the theoretical analysis. Moreover, the equipollence of the solution formed under these two electric boundaries is proved, and unified solutions for the stress and electric displacement distribution in the crack-tipfield of the piezoelectric plane are achieved.     

不对称五氮齿扩展卟啉配合物的激发态性能研究

研究了不对称五氮齿扩展叶啉配合物的激发态性能.结果表明:随苯环上取代基变化,其发射光谱出现在770～820 nm的近红外区域,荧光量子产率小于0.02,寿命小于(?)ns.最低激发单重态能量、荧光量子产率分别和对位取代的 Hammett常数及亲电取代的Hammett常数存在很好的线性关系.激发三重态的能量为123kJ/mol左右,T_1～T_n吸收峰值出现在460～490nm区域,三重态寿命在几十微秒量级,敏化产生单重态氧的量子产率可高达0.9以上.     

反相液体色谱中饱和醇保留行为的研究 Ⅰ.低碳醇保留行为与溶质分子结构的关系

本文从吸附-疏溶剂理论出发,根据热力学平衡观点,导出了一定固定相和流动相时,描述溶质保留行为与其分子结构关系的理论模型,并用之预测了饱和醇的保留值,获满意结果。从而表明本模型不但能用于同系物,而且亦可用于同分异构体及立体异构体保留行为的预测。     

化学键联铁-钴四核羰基簇结构的EXAFS研究

本文以EXAFS方法研究了化学键联的四核铁-钴羰基簇[Co_(?)Fe(CO)_(12)]~-的表面结构。结果显示担载后Co—Co键长缩短0.04(?),Co—C和Co—Fe键长分别增长0.03和0.08(?),说明FeCo_3的四面体簇骼在担载后更大地偏离开理想的正四面体。