Self-assembly of Carboxyl Functionalized Polystyrene Nanospheres into Close-packed Monolayers via Chemical Adsorption

The polyacrylic acid functionalized polystyrene nanospheres were synthesized and self-assembled into irregular, densely packed monolayers in non-aqueous media. The polymer nanoparticles were chemically adhered to substrates. The morphologies of the resulting films were investigated. The impact of the volume fraction of alcohol in the mixed solvents on the particle adsorption and fabrication of nanosphere assembled films was examined.     

Fabrication of Zeolite A Rods with Irregular Macropores by Self-assembly of Zeolite A Microcrystals Using Microwave-assisted Hydrothermal Synthesis

Zeolite A rods by self-assembly of zeolite A microcrystal were successfully synthesized by microwave-assisted hydrotherrnal synthesis. The average size of zeolite crystals consisting of self-assembling materials was about 300 nm and the length of zeolite rods was in the range of 15--30μm.     

微全分析系统检测方法的研究进展

综述了不同类型的检测方法在微全分析系统的应用，并简述了各类型的检测方法的优缺点。引用文献92篇。     

微模塑法制备PMMA/SiO2二氧化硅杂化材料微结构

以摩尔比为 1∶1的甲基丙烯酸甲酯 (MMA)、甲基丙烯酸 (3 三乙氧基硅烷基 )丙酯 (ESMA)单体、0 .2 %(单体总量的质量分数 )的偶氮二异丁腈AIBN引发剂和四氢呋喃 (THF)溶剂 ,及 2 0 % (总质量分数 )的正硅酸乙酯TEOS合成出PMMA/SiO2 有机 无机杂化的杂化溶胶 .将溶胶在洗净的普通光学玻璃基片表面甩膜 .利用软刻蚀中的微模塑法 ,把有机硅弹性印章复制有精细图纹一面轻放在杂化溶胶膜上进行微模塑 ,外加 1N压力于12 0℃下处理 2h使溶胶凝胶化 .印章剥离后在基片表面就形成了PMMA/SiO2 有机 无机杂化材料的微图纹结构 .从微图纹的光学显微镜照片可以看出微模塑方法制备杂化材料复制的图纹精细度高 ,操作简单易行 ,是一类比较理想的微细图纹结构加工的方法 .     

微型压阻式压力传感器的研制

用微机械加工技术开发出一种微型主杯压阻式压力传感器，文中介绍了微型压力传感器的设计思想和研制工艺中的关键技术，并给出了该传感器的参数。测试结果表明该传感器的主要性能已达到国内先进水平。     

一种低耐压器件实现的压电陶瓷驱动电源

介绍采用普通低耐压器件三端可调集成稳压块实现的３００Ｖ输出的压电陶瓷驱动电源的设计思想，电路原理，设计计算及安装调试等内容，该设计的特点是电路简单，可靠性好，经济实用。     

微屏蔽传输线的分析与计算

微屏蔽线（ＭＳＬ）是一种新型的平面传输线，其超高的频率响应和极低的色散特性，可望广泛地应用于各种毫米波电路中，本文把用于鳍线、微带线的谱域导抗法推广到这种半封闭的传输线中，分析、计算了两种微屏蔽传输线的色散特性。计算结果与有关的实验相吻合，为这种半封闭的新型毫米波传输线提供了一种有效的计算方法。     

Ablation of GaN Using a Femtosecond Laser

We study the pulsed laser ablation of wurtzite gallium nitride(GaN) films grown on sapphire,using the femtosecond laser beam at a central wavelength of 800nm as the source for the high-speed ablation of GaN films.By measuring the backscattered Raman spectrum of ablated samples,the dependence of the ablation depth on laser fluence with one pulse was obtained.The threwshold laser fluence for the ablation of GaN films was determined to be about 0.25J/cm^2,Laser ablation depth increases with the increasing laser fluence until the amount of removed material is not further increased.The ablated surface was investigated by an optical surface interference profile meter.