K_(0.9)Mo_6O_(17)新型导电陶瓷的制备与导电性研究

利用湿化学方法,以碳酸钾和钼酸为原料,聚乙二醇为分散剂和螯合剂,制备了K0.9Mo6O17前驱体。在碳粉保护环境及500℃温度下对所得前驱体进行煅烧后,获得了K0.9Mo6O17粉体。最后,利用此粉体制得了导电陶瓷。借助差示扫描量热仪、XRD、SEM、电化学测试系统等仪器研究了材料的相组成、微观结构及导电性。结果表明,K0.9Mo6O17粉体和陶瓷体均具有单斜晶系结构;该多晶K0.9Mo6O17陶瓷材料的室温电导率达到了0.1S/cm,且其电导率随着温度的升高而升高。利用电子跃迁和晶体场理论对K0.9Mo6O17陶瓷的导电机理进行了分析。     

一步乳液聚合法制备高溶解性导电聚苯胺

报道了一种高溶解性导电聚苯胺(PANI)的制备方法,以聚2-丙烯酰胺-2-甲基丙磺酸(PAMPS)作为掺杂酸和乳化剂,利用其特有的长链、亲水性及强酸性基团效应,通过乳液聚合法一步合成出具有较高溶解性的导电聚苯胺。利用核磁共振光谱仪(NMR)、傅里叶红外光谱仪(FT-IR)和扫描电子显微镜(SEM)等技术手段对产物结构和性能进行了表征分析。结果表明,在m(苯胺)∶m(AMPS)∶m(APS)=1∶2∶1.5;AMPS质量分数为20%;APS质量分数为30%;反应时间为5 h;反应温度为5℃的条件下,聚苯胺的产率高达86%,在有机溶剂二甲基甲酰胺(DMF)中的溶解度可达0.3814 g/g,在水中的溶解度可达0.2123 g/g,电导率达5.9 S/cm。     

掺杂剂对聚乙炔中电荷密度波的影响

用CNDO／2方法研究了各种掺杂剂对聚乙炔中电荷密度波的影响，在掺杂剂附近的碳原子上出现较大的电荷密度，且p型比n型掺杂剂的影响更大，讨论了电荷波与导电性的关系。     

导体性薄膜制造工艺

概述了导电性薄膜制造工艺,适用于制造挠性覆铜板、挠性印制板和电磁干扰(EMI)屏蔽滤波器等用途的导电性薄膜。     

化学法镀银光纤的制造工艺研究

本文介绍了一种用化学法在光纤表面镀银的工艺及其设备。这种工艺的主要特点是不纤在拉丝过程中同时涂敷金属银，可得到有良好导电性的、连续的镀银光纤。     

（苯乙烯—丁二烯—氧乙烯）多嵌段共聚物的某些特性

本文研究了(苯乙烯-丁二烯-氧乙烯)多嵌段共聚物的相转移催化能力和与LiClO_4形成络合物的导电性能以及在高分子共混时的增容作用。结果表明,该共聚物对Williamson固-液相反应具有良好的相转移催化作用;在氯醇橡胶与ABS共混中可作为增容剂,添加3％左右,即可显著地改善共混物的力学性能;与LiClO_4形成的络合物在35℃的导电率可达4×10~(-4)S·cm~(-1)。     

色彩斑斓的发光二极管

发光二极管简称发光管（英文简称LED）,它是采用特殊的磷化镓（GaP）或磷砷化镓（CaAsP）等半导体材料制成的、能够将电能直接转换成为光能的半导体器件。发光二极管虽然与普通二极管一样也是由PN结构成的,也具有单向导电性,但发光二极管不是应用它的单向导电性,而是让它发光作指示（显示）、照明器件。     

Oxygen ion conductivity of Lao.sSro.2Gao.s3Mgo.17-xCoxO3-δ synthesized by laser rapid solidification

Materials Lao.8Sro.2Gao.83Mgo.17_xCox03_6 with x = 0, 0.05, 0.085, 0.10, and 0.15 are synthesized by laser rapid solidification. It is shown that the samples prepared by laser rapid solidification give rise to unique spear-like or leaf-like microstructures which are orderly arranged and densely packed. Their electrical properties each show a general depen dence of the Co content and the total conductivities of Lao.8Sro.2Gao.83Mgo.085Coo.08503_6 prepared by laser rapid solidification are measured to be 0.067, 0.124, and 0.202 S.cm-1 at 600, 700, and 800 ℃, respectively, which are much higher than by conventional solid state reactions. Moreover, the electrical conductivities each as a function of the oxy gen partial pressure are also measured. It is shown that the samples with the Co content values 〈 8.5 mol% each exhibit basically ionic conduction while those for Co content values 〉 10 mol % each show ionic mixed electronic conduction under oxygen partial pressures from 10-16 atm （1 atm = 1.01325 x 105 Pa） to 0.98 atm. The improved ionic conductivity of Lao.sSro.2Gao.83Mgo.085Coo.08503 prepared by laser rapid solidification compared with by solid state reactions is attributed to the unique microstructure of the sample generated during laser rapid solidification.     

Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.