磁性Salisbury屏的高频响应

研究了利用磁性薄膜构造Salisbury屏的可能性及其在微波频段的反射率频率特性.结果表明，利用铁磁性材料在铁磁共振频率附近磁化率具有χ″>χ′的特性，可以构造出对电磁波有良好吸收性能的磁性Salisbury屏.通过对铁磁材料高频磁谱物理机理的分析后指出，具有弛豫型共振磁谱的铁磁材料可以构造出薄膜型Salisbury屏，其厚度为微米甚至亚微米量级.反射率的频率特性与磁性材料的特征阻抗z-r有关，它取决于铁磁共振频率和静态磁化率.反射率的频率响应显示磁性薄膜Salisbury屏具有较宽的吸收带宽. 关键词： 磁性Salisbury屏 反射率 频带响应 磁性薄膜     

TiN和Ti1-xSixNy薄膜的微观结构分析

使用x射线衍射(XRD)、x射线光电子谱(XPS)、高分辨透射电子显微镜(HRTEM)和原子力显微镜(AFM)多种观测手段分析了TiN薄膜和Ti1-xSixNy纳米复合薄膜的微观结构.实验分析证明Ti1-xSixNy薄膜是由直径为3-5nm的纳米晶TiN和非晶Si3N4相构成,并且Ti1-xSixNy薄膜的表面粗糙度小于相同条件下制备的TiN薄膜,在Ti1-xSixNy薄膜体系的自由能中引入界面能的概念,在此基础上分析了体系中TiN晶粒的取向问题.     

记录媒体用薄膜材料及相关靶材的技术和发展

 信息化时代随着计算机技术的普及来到我们面前,其突出表现是信息总量和信息交换的剧增,因此,发展海量存储技术日趋重要。随着信息及计算机技术的不断发展,对其作为主要工具的记录媒体的需求越来越大,要求越来越高。记录媒体中大多数磁盘、磁光盘、光盘是以相关靶材磁控溅射而成的,因此,为满足信息记录媒体的高密度化、小型化和低价格化,需要对其相关靶材的成分、制造工艺、性能和溅射工艺做进一步研究。目前,随着新材料的开发和记录媒体的发展,磁光盘、光盘用靶材市场在不断增长。尤其近几年CD、VCD、DVD市场的迅速扩大,其相关靶材的前景也日益被看好。     

采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜

 研究了不同衬底-阴极距离、直流电压和H₂流量对a-CH薄膜沉积速率的影响。结果表明：衬底-阴极距离必须大于0.5cm，随着该距离的增加，薄膜的沉积速率减少；直流电压达550V时沉积速率最大；随着H2含量的增加，CH₄含量相对减少，沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌，表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱，由此可以计算得到薄膜的禁带宽度及折射率。     

含氮类金刚石薄膜的紫外辐照研究

 用射频等离子体方法在玻璃基底上制备的类金刚石（DLC）薄膜，采用离子注入法掺氮，并对掺氮DLC薄膜紫外（UV）辐照前后的性能变化进行了研究。研究结果表明：随氮离子注入剂量及UV辐照时间的增加，位于2 930cm^-1附近的SP ³C-H吸收峰明显变小，而位于1 580cm^-1附近的SP2C-H吸收峰则明显增强，薄膜的电阻率明显呈下降趋势；随UV辐照时间的增加，位于1 078cm^-1附近的Si-O-Si键数量及位于786cm^-1附近的Si-C键数量明显增加。即氮离子注入和UV辐照明显改变了DLC薄膜的结构与特性。     

Multiple Scattering Effects of Ag Particles in Random Ag-SiN Film

A layer of 40nm-thick Ag-SiN film with Ag nano-particles embedded and distributed randomly in the SiN thin film were deposited by the method of radiant-frequency magnetron sputtering. Specimens orderly comprising a random Ag-SiN film and an optical phase change recording layer were exposed to a focused laser beam with wavelength of 69Ohm. It is shown that, with a random Ag-SiN layer deposited above the recording layer. Calculation by the finite difference time domain method of a 4Ohm-thick SiN film under a Gaussian beam irradiation has been carried out to simulate the near-field distribution in the film, which showed a huge local near-field intensity enhancement of about 200 times if small Ag particles with diameter of 6 nm were modelled inthe SiN film in the central region of the in cident laser spot.     

Nanoporous Structure in Low-Dielectric Films with Positronium Annihilation Lifetime Spectroscopy

We investigate nano-porous structures in thin low-dielectric films, i.e. the pore sizes, distributions, and interconnectivity, by using depth profiled positronium annihilation lifetime spectroscopy (PALS). It is found that PALS has good sensitivity to probe both interconnected and closed pores in the range from 0.3nm to 3Onto, even in the film buried beneath a diffusion barrier. A series of low dielectric constant films of organosilicon-silsequioxane with different weight percentages of porogen have been comparatively investigated. The PALS technique can be used to distinguish the open porosity from the closed one, to determine the pore size, and to detect the percolation threshold with the increasing porosity that represents the transition from closed pores to interconnected pores.Furthermore, the pore percolation length can be derived.     

新德克CD-1.1激光唱机

机器概述 面对新德克CD-1.1,感觉其朴实的外形没有太多值得书写的方面,面板造型具有新德克近期产品的典型品牌特征--双色复合结构.整块面板都使用厚度超过10mm的铝合金板制造,左右两侧浅色部分的表面以拉丝工艺处理,金属质感强烈;中间镶嵌的黑色部分具有顶部弧线设计,表面以细腻的喷砂工艺来衬托.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

CATV用新型光电复合缆

为了ＣＡＴＶ光纤同轴混合网的进一步发展，用户要求有光纤同轴复合缆。本文叙述了一种用于干线和分配网的新型光电复合缆结构。这种复合缆彩铝同轴电缆结构，这是一种近年来日益普及的结构，它们的电气、光学和机械特性将进行介绍。我们将证明，为了使复合缆的几何结构最优化而把光纤放在内导体内对同轴元件的高频特性没什么影响，光纤则受到充分的保护而保持了性能的完整性。关于专用附件（连接器、接头和接头盒）和复合引入缆结构