21世纪最具潜力的新型带隙材料——声子晶体

半导体发展中遇到的极大障碍,使许多研究人员开始研究光子晶体。然而,声子晶体比光子晶体具有更丰富的物理内涵,它是一种新型声学功能带隙材料。研究声子晶体的重要意义在于其广阔的应用前景,而且在研究过程中,还可能发现新现象和新规律,进而促进物理学的发展。一、什么是声子晶体声子晶体的概念诞生于20世纪90年代,是仿照光子晶体的概念而命名的。我们都知道,具有光子禁带的周期性电介质结构功能材料称为光子晶体,光子能量落在光子禁带中的光波将被禁止,不能在光子晶体中传播。通过对光子晶体周期结构及其缺陷进行设计,可以人为地调控光子…     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

3G带来手机服务市场增长新机遇

第三代移动通信在各种议论声中离中国越来越近，面对这个新兴的市场，3G手机服务市场也将随着3G业务的开展迎来新的增长点。2007年中国手机用户规模继续保持高速增长，截止到4月底，中国手机用户数已达到4．8亿。与此同时，和手机消费者密切相关的售后服务也越来越受到产业链各个层面的关注，成为了运营商、制造商、第三方服务提供商以及政府关注的焦点之一，企业的服务模式已超越以往“传统服务”的初级模式，开始由单纯的维修服务向个性化、多元化的用户导向模式转变。     

Origin of the 420 nm Absorption Band and Effect of Doping Fluorine in PbWO4 Crystals

The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-：PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO.     

飞秒激光加工机

飞秒激光加工技术是一种以多光子吸收为基础，能够实现无热影响的精密加工的新型激光加工技术。该技术将给21世纪各产业的发展带来巨大影响，在汽车、光通信、半导体、个人计算机、生物医疗领域有着广阔的应用前景。     

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

We propose a novel coupled quantum well structure, i.e. a quasi-symmetric coupled quantum well (QSCQW). Based on the demands of optical switching devices for quantum well materials, the QSCQW configuration is further optimized. Consequently, in the case of low applied electric field 25kV/cm and low absorption loss 100cm^-1, a large field-induced refractive index change (for TE mode, n = 0.0106; for TM mode, n = 0.0115) is obtained in the QSCQW structure at the operation wavelength 1550hm. The value is in one or two order of magnitude larger than that in a rectangular quantum well and about 50% larger than that of five-step asymmetric coupled quantum well structure under the same working conditions. The refractive index change obtained with the optimized QSCQW under so low absorption loss and applied electric field is very attractive for semiconductor optical switching devices. This manifests that the QSCQW structure has a great potential for applications in ultra-fast and low-voltage optical switches and in travelling wave modulators.     

多维树枝状有机分子的双光子吸收特性

利用响应理论方法,研究了新近合成的以二-(苯乙烯基)苯为主干的多分枝有机物的双光子吸收特性.结果表明这些多维有机分子显示了较好的双光子吸收特性,其中A-π-A型的有机分子具有较大的双光子吸收截面,进一步说明了到底是对称型的还是不对称型的有机分子具有大的双光子吸收截面还与分子的π中心有关.