Photoluminescence and thermoluminescence properties of SnO2 nanoparticles embedded in Li20-K20-B203 with Cu-doping

Cu-doped borate glass co-doped with SnO2 nanoparticles is fabricated by melt quenching. The structure and morphology of the samples are examined by X-ray diffraction and field emission scanning electron microscopy. Up-conversion enhancement is observed in the photoluminescence （PL） and thermolumines- cence （TL） intensities of the glass. PL emission spectra are identified in the blue and green regions, and a fourfold increase in emission intensity may be observed in the presence of embedded SnO2 nanoparticles. The glow curve is recorded at 215℃, and fourfold increases in TL intensity are obtained by addition of 0.1 mol% SnO2 nanoparticles to the glass. Higher TL responses of the samples are observed in the energy range of 15-100 KeV. At energy levels greater than -0.1 MeV, however, flat responses are obtained. The activation energy and frequency factor of the second-order kinetic reaction are calculated by the peak shape method.     

Towards understanding the carbon trapping mechanism in copper by investigating the carbon-vacancy interaction

We propose a vacancy trapping mechanism for carbon-vacancy (C-V) complex formation in copper (Cu) according to the first-principles calculations of the energetics and kinetics of C-V interaction. Vacancy reduces charge density in its vicinity to induce C nucleation. A monovacancy is capable of trapping as many as four C atoms to form CnV (n=1,2,3,4) complexes. A single C atom prefers to interact with neighboring Cu at a vacancy with a trapping energy of 0.21 eV. With multiple C atoms added, they are preferred to bind with each other to form covalent-like bonds despite of the metallic Cu environment. For the CnV complexes, C2V is the major one due to its lowest average trapping energy (1.31 eV). Kinetically, the formation of the CnV complexes can be ascribed to the vacancy mechanism due to the lower activation energy barrier and the larger diffusion coefficient of vacancy than those of the interstitial C.     

光谱探针猩红S与牛血清白蛋白结合的发光光谱

利用荧光光谱和紫外吸收光谱,详细研究了不同温度下猩红S(PS)与牛血清白蛋白(BSA)的结合反应,发现PS对BSA的内源性荧光具有较强的猝灭作用,其猝灭机理属于静态猝灭,由此求得PS与BSA间的结合常数、结合位点数及热力学参数等.结果表明:PS与BSA之间形成了1:1稳定复合物,它们之间的作用力主要是静电引力.根据Fo...     

室温下Cu/Sn3.5Ag焊点/Cu体系中电迁移引发裂纹的形成

Electromigration （EM） behavior of Cu/Sn3.5Ag/Cu solder reaction couple was investigated with a high current density of 5 × 10^3 A/cm^2 at room temperature. One dimensional structure, copper wire/solder ball/copper wire SRC was designed and fabricated to dissipate the Joule heating induced by the current flow. In addition, thermomigration effect was excluded due to the symmetrical structure of the SRC. The experimental results indicated that micro-cracks initially appeared near the cathode interface between solder matrix and copper substrate after 474 h current stressing. With current stressing time increased, the cracks propagated and extended along the cathode interface. It should be noted that the continuous Cu6Sn5 intermetallic compounds （IMCs） layer both at the anode and at the cathode remained their sizes. Interestingly, tiny cracks appeared at the root of some long columntype Cu6Sn5 at the cathode interface due to the thermal stress.     

表面杂质对NO+CO/Pt(100)反应体系振荡动力学的影响

提出了一个格气模型， 探讨催化表面的惰性杂质对NO+CO/Pt(100)反应体系振荡动力学行为的影响．研究发现表面杂质较少时，反应进程中表面重构能够形成相连通的1*1相和持续的振荡行为．当表面杂质不断增加时，反应进程中1*1相只能形成许多孤立的畴，从而在1*1相形成的随机的局域振荡的空间关联被削弱，因而体系全局的持续振荡行为演变为衰减振荡行为．当表面吸附的CO和NO的扩散速率增加时，局域振荡的空间协同又得到加强，体系又呈现出持续振荡行为．     

北电科林KL3353DVB接收机遭雷击的检修

近日,某农户送来一台北电科林KL3353新天地卫星接收机要求维修,机主描述说当天晚上收看正常,第二天开机便无任何反应,并且补充说晚上曾发生过雷电。接手后将机器通电试验,果然没有任何反应,看来确实是机器损坏,初步估计是那天晚上机主没有彻底断开市电造成机器遭受雷击所致。将接收机外壳打开,发现该机的电源板和AV射频板在一块PCB板上,并且PCB板上一只SIP-7封装的集成电路顶部已经炸裂,顺着通往主板的排     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

反应显微成像谱仪动量及能量分辨因素分析

在对反应显微成像谱仪的工作原理作简要介绍的基础上,全面分析了各种可能影响动量分辨的因素,并结合反应显微成像谱仪的技术参数分别对反冲离子动量分辨以及电子动量与能量分辨进行了详细计算和讨论,确定了反应显微成像谱仪的动量及能量分辨,并为进一步提高分辨提供了重要依据. 关键词： 动量分辨 能量分辨 反应显微成像谱仪 动量成像原理     

用准经典轨迹的理论方法研究H+ +H2反应

在新的势能面上,用准经典轨迹的方法对H H2反应体系进行了动力学研究．理论计算的结果发现,这个反应体系的前向和后向的角分布基本是对称的．同时还给出了在不同碰撞能下这个反应体系的转动态的分布情况．在碰撞能的从0．124到1．424 eV时,反应H H2的积分截面是随着碰撞能的增加而逐渐降低的．而且理论计算结果与实验结果也符合的非常好．     

D+CD4→CD3+D2反应的量子含时动力学研究

运用半刚体振动转子靶(semirigid vibrating rotor target)模型,利用含时波包法(TDWP method),对反应D+CD4→CD3+D2进行了量子含时动力学研究与计算.反应几率随平动能的变化图象,呈现出显著的量子共振特性.并通过对v=0时,j=0,1,2的反应几率以及j=0时,v=0,1的反应几率的计算,对该反应的空间效应进行了研究与分析.